Real-space study of the pathway for dissociative adsorption of H2 on Si(001)

Adsorption Behaviors of Chlorosilanes, HCl, and H2 on the Si(100) Surface: A First-Principles Study

The hydrochlorination process is a necessary technological step for the production of polycrystalline silicon using the Siemens method. In this work, the adsorption behaviors of silicon tetrachloride (SiCl₄), silicon dichloride (SiCl₂), dichlorosilane (SiH₂Cl₂), trichlorosilane (SiHCl₃), HCl, and H₂ on the Si(100) surface were investigated by first-principles calculations. The different adsorption sites and adsorption orientations were taken into account. The adsorption energy, charge transfer, and electronic properties of different adsorption systems were systematically analyzed. The results show that all of the molecules undergo dissociative chemisorption at appropriate adsorption sites, and SiHCl₃ has the largest adsorption strength. The analysis of charge transfer indicates that all of the adsorbed molecules behave as electron acceptors. Furthermore, strong interactions can be found between gas molecules and the Si(100) surface as proved by the analysis of electronic properties. In addition, SiCl₂ can be formed by the dissociation of SiCl₄, SiH₂Cl₂, and SiHCl₃. The transformation process from SiCl₄ to SiCl₂ is exothermic without any energy barrier. While SiH₂Cl₂ and SiHCl₃ can be spontaneously dissociated into SiHCl₂, SiHCl₂ should overcome about 110 kJ/mol energy barrier to form SiCl₂. Our works can provide theoretical guidance for hydrochlorination of SiCl₄ in the experimental method.

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultradense Data Storage

Many diverse material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum computation, and data storage all rely on a well-developed understanding of materials at the atomic scale. Here, we report a versatile scanning tunneling microscope (STM) charge characterization technique, which reduces the influence of the typically perturbative STM tip field, to develop this understanding even further. Using this technique, we can now observe single molecule binding events to atomically defined reactive sites (fabricated on a hydrogen-terminated silicon surface) through electronic detection. We then developed a simplified error correction tool for automated hydrogen lithography, quickly directing molecular hydrogen binding events using these sites to precisely repassivate surface dangling bonds (without the use of a scanned probe). We additionally incorporated this molecular repassivation technique as the primary rewriting mechanism in ultradense atomic data storage designs (0.88 petabits per in²).

Antiferromagnetic spin ordering in the dissociative adsorption of H2 on Si(001): density-functional calculations

The dissociative adsorption of an H(2) molecule on the Si(001) surface, which has been experimentally identified in terms of dissociation on one side of two adjacent Si dimers, is investigated by spin polarized density-functional calculations within the generalized-gradient approximation. In contrast to the prevailing nonmagnetic configuration of charge ordering, we propose a new ground state where the two single dangling bonds (DBs) created by H(2) dissociation are antiferromagnetically coupled with each other. Such a spin ordering is found to be energetically favored over the previously proposed charge ordering. In the latter configuration, the buckling of the two DBs amounts to a height difference (Delta h) of 0.63 A, caused by a Jahn-Teller-like distortion, while in the former configuration, their buckling is almost suppressed to be Delta h=0.03 A as a consequence of spin polarization.

Atomistic view of the recombinative desorption of H2 from H/Si(100)

Scanning tunneling microscopy is employed to investigate the recombinative desorption of H2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1 x 1), (3 x 1), and (2 x 1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3 x 1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.

Coverage dependent desorption dynamics of deuterium on Si(100) surfaces: Interpretation with a diffusion-promoted desorption model

We studied coverage dependence of time-of-flight (TOF) spectra of D2 molecules thermally desorbed from the D/Si(100) surface. The mean translational energies Et of desorbed D2 molecules were found to increase from 0.20+/-0.05 eV to 0.40+/-0.04 eV as the desorption coverage window was decreased from 1.0 ML> or =thetaD> or =0.9 ML to 0.2 ML> or =thetaD> or =0 ML, being consistent with the kinetics switch predicted in the interdimer mechanism. The measured TOF spectra were deconvoluted into 2H, 3H, and 4H components by a curve fitting method along the principle of detailed balance. As a result, it turned out that the desorption kinetics changes from the 4H to the 3H situation at high coverage above thetaD=0.9 ML, while the 2H desorption is dominant for a quite wide coverage region up to thetaD=0.8 ML. A dynamic desorption mechanism by which the desorption is promoted by D-atom diffusion to dangling bonds was proposed.

Spatial fluctuations and anomalous reaction order in a reactive scheme involving a cooperative full desorption

Anomalous reaction rates have been found in the hydrogen desorption of H-terminated surfaces in semiconductor epitaxy, with a reaction order shifting from two to one, or even taking fractional values. We analyze the issue in terms of a cooperative full desorption (CFD) reaction A+A--k3-->S+S , coupled to an adsorption reaction S--k1-->A and an alternative desorption route A--k2-->S . Steady state properties of the three-step reactive scheme are analyzed in a one-dimensional lattice in the absence of diffusion. Microscopic Monte Carlo simulations show anomalous spatial distributions of reactants in the stationary state: depending on the reaction rate constants of the overall scheme, either a local "aggregation" or a local "dispersion" of A -particles is observed. The CFD reaction itself is well described by a fractional order kinetics that takes into account these anomalies and that depends on the kinetic rate constants of the overall adsorption-desorption reaction mechanism. The problem is addressed with an analytical approach for the active neighborhood of a reactant, which provides a closed expression of the reaction order as a function of the kinetic parameters. This approach is in excellent agreement with numerical simulations. Spatial correlations, as well as fluctuation correlations, are also formalized in terms of the kinetic constants. We discuss the results in the context of the hydrogen evolution reaction on silicon surfaces.

First-principles string molecular dynamics: An efficient approach for finding chemical reaction pathways

A recently proposed approach, called "string method," allows us to find minimum energy pathways connecting two metastable states of a system [W. E et al., Phys. Rev. B 66, 052301 (2002)]. So far this approach has been only used with empirical force field parametrizations of the atomic potential energy surface or in the context of macroscopic continuum models. Here we show that the string method can be efficiently combined with first-principles molecular dynamics to provide an accurate description of chemical reaction pathways and barriers. We illustrate the first-principles string molecular dynamics by applying it to the study of a surface chemical reaction, for which extensive experimental and theoretical works are available, namely, the adsorption of H(2) on the reconstructed Si(100) surface.

Molecular beam investigation of hydrogen dissociation on Si(001) and Si(111) surfaces

The influence of molecular vibrations on the reaction dynamics of H2 on Si(001) as well as isotopic effects have been investigated by means of optical second-harmonic generation and molecular beam techniques. Enhanced dissociation of vibrationally excited H2 on Si(001)2 x 1 has been found corresponding to a reduction of the mean adsorption barrier to 390 meV and 180 meV for nu=1 and nu=2, respectively. The adsorption dynamics of the isotopes H2 and D2 show only small differences in the accessible range of beam energies between 50 meV and 350 meV. They are traced back to different degrees of vibrational excitation and do not point to an important influence of quantum tunneling in crossing the adsorption barrier. The sticking probability of H2 on the 7 x 7-reconstructed Si(111) surface was found to be activated both by H2 kinetic energy and surface temperature in a qualitatively similar fashion as H2/Si(001)2 x 1. Quantitatively, the overall sticking probabilities of H2 on the Si(111) surface are about one order of magnitude lower than on Si(001), the influence of surface temperature is generally stronger.

Quantum Monte Carlo calculations of H2 dissociation on Si(001)

The dissociative adsorption of H2 on the Si(001) surface is theoretically investigated for several reaction pathways using quantum Monte Carlo methods. Our reaction energies and barriers are at large variance with those obtained with commonly used approximate exchange-correlation density functionals. Our results for adsorption support recent experimental findings, while, for desorption, the calculations give barriers in excess of the presently accepted experimental value, pinpointing the role of coverage effects and desorption from steps.

The effect of gas adsorption on the field emission mechanism of carbon nanotubes

We have investigated systematically the effects of various gas adsorbates (H2, N2, O2, and H2O) on the electronic structures and the field emission properties of open edges of single-walled carbon nanotubes by density functional calculations. All of the molecules, except N2, dissociate and chemisorb on open nanotube edges with large adsorption energies. The Fermi levels are moved toward the valence (conduction) bands for O2 (H2, H2O) adsorption induced by the Mulliken charge transfer on the tube edge. The Fermi level shift for N2 adsorption is negligible. Adsorption of H2O enhances the field emission current, whereas H2 adsorption does not affect the field emission current much because of the absence of the density of states near the Fermi level. The correlation of the electronic structures and the field emission current is further discussed.

Translational heating of D(2) molecules thermally desorbed from Si(100) and Ge(100) surfaces

The translational energies of D(2) molecules thermally desorbed from the Si(100) and Ge(100) surfaces under a heating rate of 6 K/s have been measured. In contrast to the previous laser desorption study, results show a considerable translational heating; the observed translational temperature is about 3 times higher than the desorption temperature for both surfaces. This fact indicates that energy barriers for adsorption are present even in the desorption pathway. Detailed balance is applicable to the adsorption and desorption dynamics of hydrogen on the Si(100) surface.

Probing high-barrier pathways of surface reactions by scanning tunneling microscopy

The ability of scanning tunneling microscopy to probe the pathways of thermally activated high-barrier surface processes is frequently limited by competing low-barrier processes that can confuse measurement of the true initial and final configuration. We introduce an approach to circumvent this difficulty by driving the surface process with nanosecond laser heating. The method is applied to determine the pathway of recombinative desorption in the H/Si(001) system. The observed configuration of dangling bonds after laser heating reveals that the desorbed hydrogen molecules are not formed on single dimers, but rather from neighboring silicon dimers via an interdimer reaction pathway.

Stereochemistry on Si(001): angular dependence of H2 dissociation

The angular dependence of the dissociative adsorption of molecular hydrogen at terrace and step sites of vicinal single-domain Si(001) surfaces was investigated by means of molecular beam techniques and optical second-harmonic generation. A strongly anisotropic behavior was observed for terrace adsorption with polar distributions of cos3theta and cos12theta parallel and perpendicular to the dimer, respectively. The D(B)-steps show enhanced reactivity under glancing incidence in the upwards direction. The results are traced back to the directionality of the covalent surface bonds.