Spin-sensitive bleaching and monopolar spin orientation in quantum wells

Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb1-xSnxTe

Topological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. Pb_1−xSn_xTe alloys belong to the topological crystalline phase when the SnTe content x exceeds 0.35, while they are in the trivial phase at x < 0.35. For the surface crystallographic orientation (111), the appearance of topologically nontrivial surface states is expected. We studied the photoelectromagnetic (PEM) effect induced by laser terahertz radiation in Pb_1−xSn_xTe films in the composition range x = (0.11–0.44), with the (111) surface crystallographic orientation. It was found that in the trivial phase, the amplitude of the PEM effect is determined by the power of the incident radiation, while in the topological phase, the amplitude is proportional to the flux of laser radiation quanta. A possible mechanism responsible for the effect observed presumes damping of the thermalization rate of photoexcited electrons in the topological phase and, consequently, prevailing of electron diffusion, compared with energy relaxation.

Molecular spectrum of laterally coupled quantum rings under intense terahertz radiation

We study the influence of intense THz laser radiation and electric field on molecular states of laterally coupled quantum rings. Laser radiation shows the capability to dissociate quantum ring molecule and add 2-fold degeneracy to the molecular states at the fixed value of the overlapping size between rings. It is shown that coupled to decoupled molecular states phase transition points form almost a straight line with a slope equal to two. In addition, the electric field direction dependent energy spectrum shows unexpected oscillations, demonstrating strong coupling between molecular states. Besides, intraband absorption is considered, showing both blue and redshifts in its spectrum. The obtained results can be useful for the controlling of degeneracy of the discrete energy spectrum of nanoscale structures and in the tunneling effects therein.

Spin relaxation dynamics of holes in intrinsic GaAs quantum wells studied by transient circular dichromatic absorption spectroscopy at room temperature

Spin relaxation dynamics of holes in intrinsic GaAs quantum wells is studied using time-resolved circular dichromatic absorption spectroscopy at room temperature. It is found that ultrafast dynamics is dominated by the cooperative contributions of band filling and many-body effects. The relative contribution of the two effects is opposite in strength for electrons and holes. As a result, transient circular dichromatic differential transmission (TCD-DT) with co- and cross-circularly polarized pump and probe presents different strength at several picosecond delay time. Ultrafast spin relaxation dynamics of excited holes is sensitively reflected in TCD-DT with cross-circularly polarized pump and probe. A model, including coherent artifact, thermalization of nonthermal carriers and the cooperative contribution of band filling and many-body effects, is developed, and used to fit TCD-DT with cross-circularly polarized pump and probe. Spin relaxation time of holes is achieved as a function of excited hole density for the first time at room temperature, and increases with hole density, which disagrees with a theoretical prediction based on EY spin relaxation mechanism, implying that EY mechanism may be not dominant hole spin relaxation mechanism at room temperature, but DP mechanism is dominant possibly.

Control of Spin Helix Symmetry in Semiconductor Quantum Wells by Crystal Orientation

We investigate the possibility of spin-preserving symmetries due to the interplay of Rashba and Dresselhaus spin-orbit coupling in n-doped zinc-blende semiconductor quantum wells of general crystal orientation. It is shown that a conserved spin operator can be realized if and only if at least two growth direction Miller indices agree in modulus. The according spin-orbit field has in general both in-plane and out-of-plane components and is always perpendicular to the shift vector of the corresponding persistent spin helix. We also analyze higher-order effects arising from the Dresselhaus term, and the impact of our results on weak (anti)localization corrections.

Detection of the Anomalous Velocity with Subpicosecond Time Resolution in Semiconductor Nanostructures

We report on the time-resolved detection of the anomalous velocity, constituting charge carriers moving perpendicular to an electric driving field, in undoped GaAs quantum wells. For this we optically excite the quantum wells with circularly polarized femtosecond laser pulses, thereby creating a state which breaks time-inversion symmetry. We then employ a quasi-single-cycle terahertz pulse as an electric driving field to induce the anomalous velocity. The electromagnetic radiation emitted from the anomalous velocity is studied with a subpicosecond time resolution and reveals intriguing results. We are able to distinguish between intrinsic (linked to the Berry curvature) and extrinsic (linked to scattering) contributions to the anomalous velocity both originating from the valence band and observe local energy space dependence of the anomalous velocity. Our results thus constitute a significant step towards noninvasive probing of the anomalous velocity locally in the full energy-momentum space and enable the investigation of many popular physical effects such as the anomalous Hall effect and spin Hall effect on ultrafast time scales.

Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.

Spin precession and alternating spin polarization in spin-3/2 hole systems

The spin density matrix for spin-3/2 hole systems can be decomposed into a sequence of multipoles which has important higher-order contributions beyond the ones known for electron systems [R. Winkler, Phys. Rev. B 70, 125301 (2004)]. We show here that the hole spin polarization and the higher-order multipoles can precess due to the spin-orbit coupling in the valence band, yet in the absence of external or effective magnetic fields. Hole spin precession is important in the context of spin relaxation and offers the possibility of new device applications. We discuss this precession in the context of recent experiments and suggest a related experimental setup in which hole spin precession gives rise to an alternating spin polarization.

Spin injection and detection in silicon

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is argued that symmetry properties of the charge current can be exploited to detect electrical spin injection in silicon using currently available techniques.

Spin relaxation by transient monopolar and bipolar optical orientation

We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps.

Orbitronics: the intrinsic orbital current in p-doped silicon

The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that an electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction from impurity scattering vanishes and the effect is robust against disorder. The orbital Hall effect leads to accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.