Relaxation and dephasing of multiexcitons in semiconductor quantum dots

Kinetics of pulse-induced photoluminescence from a semiconductor quantum dot

Optical methods, which allow the determination of the dominant channels of energy and phase relaxation, are the most universal techniques for the investigation of semiconductor quantum dots. In this paper, we employ the kinetic Pauli equation to develop the first generalized model of the pulse-induced photoluminescence from the lowest-energy eigenstates of a semiconductor quantum dot. Without specifying the shape of the excitation pulse and by assuming that the energy and phase relaxation in the quantum dot may be characterized by a set of phenomenological rates, we derive an expression for the observable photoluminescence cross section, valid for an arbitrary number of the quantum dot's states decaying with the emission of secondary photons. Our treatment allows for thermal transitions occurring with both decrease and increase in energy between all the relevant eigenstates at room or higher temperature. We show that in the general case of N states coupled to each other through a bath, the photoluminescence kinetics from any of them is determined by the sum of N exponential functions, whose exponents are proportional to the respective decay rates. We illustrate the application of the developed model by considering the processes of resonant luminescence and thermalized luminescence from the quantum dot with two radiating eigenstates, and by assuming that the secondary emission is excited with either a Gaussian or exponential pulse. Analytic expressions describing the signals of secondary emission are analyzed, in order to elucidate experimental situations in which the relaxation constants may be reliably extracted from the photoluminescence spectra.

State-resolved studies of biexcitons and surface trapping dynamics in semiconductor quantum dots

Biexcitons in strongly confined, colloidal CdSe quantum dots were investigated with excitonic state selectivity combined with 10 fs temporal precision. Within the first 50 fs, the first excited state of the biexciton was observed. By 100 ps, mixed character biexcitons were observed, comprised of a core exciton and a surface trapped exciton. The size dependence of the biexciton binding energies is reported for these specific biexcitons. Analysis of the spectral signatures of each biexcitonic state yields a quantitative measure of enhanced excited state trapping rates at the surface of the quantum dots. By comparing the biexcitonic signals to the state-filling signals, we show that it is primarily the holes which are trapped at the interface on the 100 ps time scale.

Exciton-phonon coupling and disorder in the excited states of CdSe colloidal quantum dots

We study the origin of the spectral line shape in colloidal CdSe nanocrystal quantum dots. The three-pulse photon echo peak shift (3PEPS) data reveal a temperature-independent fast decay, obscuring the quantification of the homogeneous linewidth. The optical gap and Stokes shift are found to have an anomalous behavior with temperature, which is size, capping group, and surrounding polymer matrix independent. Using these results and combining them with simulations, we discuss the role of exciton-phonon coupling, static inhomogeneity, exciton fine structure, and exciton state disorder in the linewidth of the nanocrystal. In particular, our analysis shows that the disorder due to surface imperfections and finite temperature effects, as well as the relaxation within the fine structure, can have significant impact on the steady-state absorption spectrum, 3PEPS data, and dephasing processes.

Stimulated emission from the biexciton in a single self-assembled II-VI quantum dot

Using two-photon excitation, stimulated emission from the biexciton state in a single CdSe/ZnSe quantum dot is observed in a two-pulse configuration. We directly time resolve the emission-absorption characteristics and verify the potential for laser action. By setting the polarization of the stimulation pulse, the recombination path of the biexciton and, by this, the state of the photons emitted in the decay cascade is controlled. We elaborate also the coherent response and address entanglement and disentanglement of the exciton-biexciton system.

Isolated single quantum dot emitters in all-epitaxial microcavities

Data are presented on a fabrication approach that places an isolated single quantum dot at the center of a semiconductor microcavity. The microcavity is based on an all-epitaxial mesa-confined design that is mechanically robust and provides the thermal dissipation needed for a single photon source device technology. Microphotoluminescence is used to reveal single quantum dot emission with the essential optical properties of single quantum emitters.

Two-photon coherent control of a single quantum dot

We report on two-photon coherent control of the biexciton state in single Stranski-Krastanov CdSe quantum dots. Clear interference patterns are observed at twice the optical frequency. The decay of the interference contrast is nonexponential and caused by a dynamical inhomogeneous broadening of the energy levels due to long-term fluctuations in the dot environment.