Ising quantum Hall ferromagnet in magnetically doped quantum wells

Mesoscopic Transport in Electrostatically Defined Spin-Full Channels in Quantum Hall Ferromagnets

In this work, we use electrostatic control of quantum Hall ferromagnetic transitions in CdMnTe quantum wells to study electron transport through individual domain walls (DWs) induced at a specific location. These DWs are formed due to the hybridization of two counterpropagating edge states with opposite spin polarization. Conduction through DWs is found to be symmetric under magnetic field direction reversal, consistent with the helical nature of these DWs. We observe that long domain walls are in the insulating regime with a localization length of 4-6  μm. In shorter DWs, the resistance saturates to a nonzero value at low temperatures. Mesoscopic resistance fluctuations in a magnetic field are investigated. The theoretical model of transport through impurity states within the gap induced by spin-orbit interactions agrees well with the experimental data. Helical DWs have the required symmetry for the formation of synthetic p-wave superconductors. The achieved electrostatic control of a single helical domain wall is a milestone on the path to their reconfigurable network and ultimately to a demonstration of the braiding of non-Abelian excitations.

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of ~2.4 × 10¹⁰ cm⁻², this ratio grows greater than 1, resulting in a ferromagnetic ground state at filling factor ν = 2. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.

Role of chiral quantum Hall edge states in nuclear spin polarization

Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and, in particular, the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on the nuclear spin polarization. A side-by-side comparison of the RDNMR signals from Hall bar and Corbino disk configurations allows us to distinguish the contributions of bulk and edge states to DNP in QHF. The unidirectional current flow along chiral edge states makes the polarization robust to thermal fluctuations at high temperatures and makes it possible to observe a reciprocity principle of the RDNMR response. These findings help us better understand complex NMR responses in QHF, which has important implications for the development of RDNMR techniques.

Quantum Hall phases in two-dimensional systems have chiral edges, along which electrons propagate in one direction without backscattering. Here, the authors use nuclear magnetic resonance to demonstrate how chiral modes establish dynamical nuclear polarization in a quantum Hall ferromagnet.

Many-body effects on the rho(xx) ringlike structures in two-subband wells

The longitudinal resistivity rho(xx) of two-dimensional electron gases formed in wells with two subbands displays ringlike structures when plotted in a density-magnetic-field diagram, due to the crossings of spin-split Landau levels (LLs) from distinct subbands. Using spin density functional theory and linear response, we investigate the shape and spin polarization of these structures as a function of temperature and magnetic-field tilt angle. We find that (i) some of the rings "break" at sufficiently low temperatures due to a quantum Hall ferromagnetic phase transition, thus exhibiting a high degree of spin polarization (approximately 50%) within, consistent with the NMR data of Zhang et al. [Phys. Rev. Lett. 98, 246802 (2007)], and (ii) for increasing tilting angles the interplay between the anticrossings due to inter-LL couplings and the exchange-correlation effects leads to a collapse of the rings at some critical angle theta(c), in agreement with the data of Guo et al. [Phys. Rev. B 78, 233305 (2008)].

Spin currents in diluted magnetic semiconductors

We study zero-bias spin separation in (Cd,Mn)Te/(Cd,Mg)Te diluted magnetic semiconductor structures. The spin current generated by electron gas heating under terahertz radiation is converted into a net electric current by applying an external magnetic field. The experiments show that the spin polarization of the magnetic ion system enhances drastically the conversion process due to giant Zeeman splitting of the conduction band and spin-dependent electron scattering on localized Mn(2+) ions.

Electronic transport properties of the Ising quantum Hall ferromagnet in a Si quantum well

Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.

Anomalous resistance ridges along filling factor nu=4i

We report anomalous structure in the magnetoresistance of SiO(2)/Si(100)/SiO(2) quantum wells. When Landau levels of opposite valleys are driven through coincidence at the Fermi level, the longitudinal resistance displays elevations at filling factors that are integer multiples of 4 (nu=4i) accompanied by suppression on either side of nu=4i. This persists when either the magnetic field or the valley splitting is swept, leading to resistance ridges running along nu=4i. The range of field over which they are observed points to the role of spin degeneracy, which is directly confirmed by their disappearance with the addition of an in-plane magnetic field. The data suggest a new type of many-body effect arising from the combined degeneracy due to the valley and the spin degrees of freedom.

Hysteretic resistance spikes in quantum hall ferromagnets without domains

We use spin-density-functional theory to study recently reported hysteretic magnetoresistance rho(xx) spikes in Mn-based 2D electron gases [Phys. Rev. Lett. 89, 266802 (2002)10.1103/PhysRevLett.89.266802]. We find hysteresis loops in our calculated Landau fan diagrams and total energies signaling quantum Hall ferromagnet phase transitions. Spin-dependent exchange-correlation effects are crucial to stabilize the relevant magnetic phases arising from distinct symmetry-broken excited- and ground-state solutions of the Kohn-Sham equations. Besides hysteretic spikes in rho(xx), we predict hysteretic dips in the Hall resistance rho(xy). Our theory, without domain walls, satisfactorily explains the recent data.

Manipulating spin and charge in magnetic semiconductors using superconducting vortices

The continuous need for miniaturization and increase in device speed drives the electronics industry to explore new avenues of information processing. One possibility is to use electron spin to store, manipulate and carry information. All such 'spintronics' applications are faced with formidable challenges in finding fast and efficient ways to create, transport, detect, control and manipulate spin textures and currents. Here we show how most of these operations can be performed in a relatively simple manner in a hybrid system consisting of a superconducting film and a paramagnetic diluted magnetic semiconductor (DMS) quantum well. Our proposal is based on the observation that the inhomogeneous magnetic fields of the superconducting film create local spin and charge textures in the DMS quantum well, leading to a variety of effects such as Bloch oscillations and an unusual quantum Hall effect. We exploit recent progress in manipulating magnetic flux bundles (vortices) in superconductors and show how these can create, manipulate and control the spin textures in DMSs.

Critical resistance in the AlAs quantum Hall ferromagnet

Magnetic transitions in AlAs two-dimensional electrons give rise to sharp resistance spikes within the quantum Hall effect. Such spikes are likely caused by carrier scattering at magnetic domain walls below the Curie temperature. We report a critical behavior in the temperature dependence of the spike width and amplitude, from which we deduce the Curie temperature of the quantum Hall ferromagnet. Our data also reveal that the Curie temperature increases monotonically with carrier density.