Optical properties of ultrathin films: evidence for a dielectric anomaly at the insulator-to-metal transition

Anisotropic terahertz transmission induced by the external magnetic field in La0.67Ca0.33MnO3 film

A systemic investigation of the terahertz (THz) transmission of La_0.67Ca_0.33MnO₃ film on the (001)-oriented NdGaO₃ substrate under external magnetic field and low temperature have been performed. The significant THz absorption difference between the out-of-plane and the in-plane magnetic field direction is observed, which is consistent with the electrical transport measurement using the standard four-probe technique. Furthermore, we find that the complex THz conductivities can be reproduced in terms of the Drude Smith equation as the magnetic field is perpendicular to the film plane, whereas it deviates from this model when the in-plane magnetic field is applied. We suggest that such anisotropies in THz transport dynamics have close correspondences with the phase separation and anisotropic magnetoresistance effects in the perovskite-structured manganites. Our work demonstrates that the THz time-domain spectroscopy (TDS) can be an effective non-contact method for studying the magneto-transport properties of the perovskite-structured manganites.

Enhanced terahertz conductivity in ultra-thin gold film deposited onto (3-mercaptopropyl) trimethoxysilane (MPTMS)-coated Si substrates

Various material properties change considerably when material is thinned down to nanometer thicknesses. Accordingly, researchers have been trying to obtain homogeneous thin films with nanometer thickness but depositing homogeneous few nanometers thick gold film is challenging as it tends to form islands rather than homogenous film. Recently, studies have revealed that treating the substrate with an organic buffer, (3-mercaptopropyl) trimethoxysilane (MPTMS) enables deposition of ultra-thin gold film having thickness as low as 5 nm. Different aspects of MPTMS treatment for ultra-thin gold films like its effect on the structure and optical properties at visible wavelengths have been investigated. However, the effect of the MPTMS treatment on electrical conductivity of ultra-thin gold film at terahertz frequency remains unexplored. Here, we measure the complex conductivity of nanometer-thick gold films deposited onto an MPTMS-coated silicon substrate using terahertz time-domain spectroscopy. Following the MPTMS treatment of the substrate, the conductivity of the films was found to increase compared to those deposited onto uncoated substrate for gold films having the thickness less than 11 nm. We observed 5-fold enhancement in the conductivity for a 7 nm-thick gold film. We also demonstrate the fabrication of nanoslot-antenna arrays in 8.2-nm-thick gold films. The nanoslot-antenna with MPTMS coating has resonance at around 0.5 THz with an electric field enhancement of 44, whereas the nanoslot-antenna without MPTMS coating does not show resonant properties. Our results demonstrate that gold films deposited onto MPTMS-coated silicon substrates are promising advanced materials for fabricating ultra-thin terahertz plasmonic devices.

Quantitative Cross-Platform Performance Comparison between Different Detection Mechanisms in Surface Plasmon Sensors for Voltage Sensing

Surface plasmon Resonance (SPR) has recently been of interest for label-free voltage sensing. Several SPR structures have been proposed. However, making a quantitative cross-platform comparison for these structures is not straightforward due to (1) different SPR measurement mechanisms; (2) different electrolytic solution and concentration in the measurement; and (3) different levels of external applied potential. Here, we propose a quantitative approach to make a direct quantitative comparison across different SPR structures, different electrolytic solutions and different SPR measurement mechanisms. There are two structures employed as example in this theoretical study including uniform plasmonic gold sensor and bimetallic layered structure consisting of uniform silver layer (Ag) coated by uniform gold layer (Ag). The cross-platform comparison was carried by several performance parameters including sensitivity (S), full width half maximum (FWHM) and figure of merit (FoM). We also discuss how the SPR measurement mechanisms enhance the performance parameters and how the bimetallic layer can be employed to enhance the FoM by a factor of 1.34 to 25 depending on the SPR detection mechanism.

Enhancement of Long-Range Surface Plasmon Excitation, Dynamic Range and Figure of Merit Using a Dielectric Resonant Cavity

In this paper, we report a theoretical framework on the effect of multiple resonances inside the dielectric cavity of insulator-insulator-metal-insulator (IIMI)-based surface plasmon sensors. It has been very well established that the structure can support both long-range surface plasmon polaritons (LRSPP) and short-range surface plasmon polaritons (SRSPP). We found that the dielectric resonant cavity under certain conditions can be employed as a resonator to enhance the LRSPP properties. These conditions are: (1) the refractive index of the resonant cavity was greater than the refractive index of the sample layer and (2) when light propagated in the resonant cavity and was evanescent in the sample layer. We showed through the analytical calculation using Fresnel equations and rigorous coupled wave theory that the proposed structure with the mentioned conditions can extend the dynamic range of LRSPP excitation and enhance at least five times more plasmon intensity on the surface of the metal compared to the surface plasmon excited by the conventional Kretschmann configuration. It can enhance the dip sensitivity and the dynamic range in refractive index sensing without losing the sharpness of the LRSPP dip. We also showed that the interferometric modes in the cavity can be insensitive to the surface plasmon modes. This allowed a self-referenced surface plasmon resonance structure, in which the interferometric mode measured changes in the sensor structure and the enhanced LRSPP measured changes in the sample channel.

Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO₂ (SnO₂:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO₂:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO₂:Sb system.

Evolution of the surface state in Bi2Se2Te thin films during phase transition

Topological insulators, a new quantum state of matter, have created exciting opportunities for studies in topological quantum physics and for exploring spintronics applications due to their gapless helical metallic surface states. In this study, thin films composed of alternate layers of Bi and Se (Te) ({Bi(3 Å)Te(9 Å)}n/{Bi(3 Å)Se(9 Å)}n) were fabricated by controlling the layer thickness within the atomic scale using thermal evaporation techniques. The high-purity growth of uniform Bi2Se2Te1 thin films has not yet been achieved using a thermal evaporation method. However, as a result of a self-ordering process during annealing, an as-grown amorphous film with p-type polarity could transform into single crystalline Bi2Se2Te1 with n-type polarity. Using THz-time domain spectroscopy (THz-TDS) and ultraviolet photoemission spectroscopy (UPS), we concluded that the conductivity is dominated by the Drude contribution, suggesting the presence of a quantum well state and surface states. Moreover we demonstrated that the emission of terahertz waves from the (001) surface of the single crystalline Bi2Se2Te1 thin film would be possible under the excitation of 790 nm femtosecond optical pulses, indicating the presence of a Dirac-fermion, a photo-Dember effect at the surface state and the transient current within the surface depletion region. The results reported herein provide useful information regarding a valuable deposition method that can be useful in studies of the evolution of surface state electrons in topological insulators.

Metal-VO2 hybrid grating structure for a terahertz active switchable linear polarizer

An active terahertz (THz) wave hybrid grating structure of Au/Ti metallic grating on VO2/Al2O3 (0001) was fabricated and evaluated. In our structure, it is shown that the metallic gratings on the VO2 layer strengthen the metallic characteristics to enhance the contrast of the metallic and dielectric phases of a VO2-based device. Especially, the metal grating-induced optical conductivity of the device is greatly enhanced, three times more than that of a metallic phase of bare VO2 films in the 0.1-2.0 THz spectral range. As an illustrative example, we fabricated an actively on/off switchable THz linear polarizer. The fabricated device has shown commercially comparable values in degree of polarization (DOP) and extinction ratio (ER). A high value of 0.89 in the modulation depth (MD) for the transmission field amplitude, superior to other THz wave modulators, is achieved. The experimental results show that the fabricated device can be highly useful in many applications, including active THz linear polarizers, THz wave modulators and variable THz attenuators.

Review of plasmonic fiber optic biochemical sensors: improving the limit of detection

This paper presents a brief overview of the technologies used to implement surface plasmon resonance (SPR) effects into fiber-optic sensors for chemical and biochemical applications and a survey of results reported over the last ten years. The performance indicators that are relevant for such systems, such as refractometric sensitivity, operating wavelength, and figure of merit (FOM), are discussed and listed in table form. A list of experimental results with reported limits of detection (LOD) for proteins, toxins, viruses, DNA, bacteria, glucose, and various chemicals is also provided for the same time period. Configurations discussed include fiber-optic analogues of the Kretschmann-Raether prism SPR platforms, made from geometry-modified multimode and single-mode optical fibers (unclad, side-polished, tapered, and U-shaped), long period fiber gratings (LPFG), tilted fiber Bragg gratings (TFBG), and specialty fibers (plastic or polymer, microstructured, and photonic crystal fibers). Configurations involving the excitation of surface plasmon polaritons (SPP) on continuous thin metal layers as well as those involving localized SPR (LSPR) phenomena in nanoparticle metal coatings of gold, silver, and other metals at visible and near-infrared wavelengths are described and compared quantitatively.

Terahertz-field-induced nonlinear electron delocalization in Au nanostructures

Improved control over the electromagnetic properties of metal nanostructures is indispensable for the development of next-generation integrated nanocircuits and plasmonic devices. The use of terahertz (THz)-field-induced nonlinearity is a promising approach to controlling local electromagnetic properties. Here, we demonstrate how intense THz electric fields can be used to modulate electron delocalization in percolated gold (Au) nanostructures on a picosecond time scale. We prepared both isolated and percolated Au nanostructures deposited on high resistivity Si(100) substrates. With increasing the applied THz electric fields, large opacity in the THz transmission spectra takes place in the percolated nanostructures; the maximum THz-field-induced transmittance difference, 50% more, is reached just above the percolation threshold thickness. Fitting the experimental data to a Drude-Smith model, we found furthermore that the localization parameter and the damping constant strongly depend on the applied THz-field strength. These results show that ultrafast nonlinear electron delocalization proceeds via strong electric field of THz pulses; the intense THz electric field modulates the backscattering rate of localized electrons and induces electron tunneling between Au nanostructures across the narrow insulating bridges without any material breakdown.

Anisotropic effective permittivity of an ultrathin gold coating on optical fiber in air, water and saline solutions

The optical properties of an ultrathin discontinuous gold film in different dielectric surroundings are investigated experimentally by measuring the polarization-dependent wavelength shifts and amplitudes of the cladding mode resonances of a tilted fiber Bragg grating. The gold film was prepared by electron-beam evaporation and had an average thickness of 5.5 nm ( ± 1 nm). Scanning electron imaging was used to determine that the film is actually formed of individual particles with average lateral dimensions of 28 nm ( ± 8 nm). The complex refractive indices of the equivalent uniform film in air at a wavelength of 1570 nm were calculated from the measurements to be 4.84-i0.74 and 3.97-i0.85 for TM and TE polarizations respectively (compared to the value for bulk gold: 0.54-i10.9). Additionally, changes in the birefringence and dichroism of the films were measured as a function of the surrounding medium, in air, water and a saturated NaCl (salt) solution. These results show that the film has stronger dielectric behavior for TM light than for TE, a trend that increases with increasing surrounding index. Finally, the experimental results are compared to predictions from two widely used effective medium approximations, the generalized Maxwell-Garnett and Bruggeman theories for gold particles in a surrounding matrix. It is found that both of these methods fail to predict the observed behavior for the film considered.

Ferroelectric soft mode in a SrTiO3 thin film impulsively driven to the anharmonic regime using intense picosecond terahertz pulses

The ferroelectric soft mode in a SrTiO(3) thin film was impulsively driven to a large amplitude using intense picosecond terahertz pulses. As the terahertz electric field increased, the soft-mode absorption peak exhibited blueshifting and spectral narrowing. A classical anharmonic oscillator model suggests that the induced displacement is comparable to that of the ferroelectric phase transition. The spectral narrowing indicates that the displacement exceeds that induced by any inhomogeneities in the film, demonstrating that the method can be used to explore intrinsic quartic anharmonicity.

Giant phase transition properties at terahertz range in VO₂ films deposited by sol-gel method

VO(2) films were fabricated on high-purity single-crystalline silicon substrate by the sol-gel method, followed by rapid annealing. The composition and microstructure of the films were investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM). The results indicated a polycrystalline nature with high crystallinity and compact nanostructure for the films, and the concentration of +4 valence vanadium is 79.85%. Correlated with these, a giant transmission modulation ratio about 81% of the film was observed by terahertz time domain spectroscopy. The experimentally observed transmission characteristics were reproduced approximately, by a simulation at different conductivities across the phase transition. According to the effective-medium theory, we assumed that it is important to increase the concentration of +4 valence vanadium oxide phases and improve the compactness of the VO(2) films for giant phase transition properties. The sol-gel-derived VO(2) films with giant phase transition properties at terahertz range, and the study on their composition and microstructure, provide considerable insight into the fabrication of VO(2) films for the application in THz modulation devices.

Refractive index and dielectric constant transition of ultra-thin gold from cluster to films

Using high-speed picometrology, the complete cluster-to-film dielectric trajectories of ultra-thin gold films on silica are measured at 488 nm and 532 nm wavelengths for increasing mass-equivalent thickness from 0.2 nm to 10 nm. The trajectories are parametric curves on the complex dielectric plane that consist of three distinct regimes with two turning points. The thinnest regime (0.2 nm-0.6 nm) exhibits increasing dipole density up to the turning point for the real part of the dielectric function at which the clusters begin to acquire metallic character. The mid-thickness regime (0.6 nm~2 nm) shows a linear trajectory approaching the turning point for the imaginary part of the dielectric function. The third regime, from 2 nm to 10 nm, clearly displays the Drude circle, with no observable feature at the geometric percolation transition.

Study of the acoustoelectric effect for SAW sensors

Research has recently begun on the use of ultrathin films and nanoclusters as mechanisms for sensing of gases, liquids, etc., because the basic material parameters may change because of film morphology. As films of various materials are applied to the surface of SAW devices for sensors, the conductivity of the films may have a strong acoustoelectric effect, whether desired or not. The purpose of this paper is to reexamine the theory and predictions of the acoustoelectric effect for SAW interactions with thin conducting or semi-conducting films. The paper will summarize the theory and predict the effects of thin film conductivity on SAW velocity and propagation loss versus frequency and substrate material. The theory predicts regions of conductivity which result in extremely high propagation loss, and which also correspond to the mid-point between the open and short-circuit velocities. As an example of the verification and possible usefulness of the acoustoelectric effect, recent experimental results of palladium (Pd) thin films on a YZ LiNbO3 SAW delay line have shown large changes in propagation loss, depending on the Pd film thickness, exposure to hydrogen gas, or both. By proper design, a sensitive hydrogen leak detector SAW sensor can be designed.

Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nanoscale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasi-particle mass in the metallic puddles. The experimental approach used sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.

Nanometer-thick Au-films as antireflection coating for infrared light

The optical properties of ultrathin Au films on silicon have been studied in the infrared over a wide frequency range from 200 to 10,000 cm(-1). Thick films show a Drude behavior; i.e., with increasing frequency the transmission increases; for films below the percolation threshold at about 5 nm a negative slope for the frequency-dependent transmission is observed. When the thickness is further reduced, between 1 and 3 nm an anomaly occurs: the relative transmission reaches maximum values above 100% compared with the bare substrate, indicating an antireflection coating of nanometer thickness for light of 5 microm wavelength. This anomaly can be explained in the framework of effective-medium theories.