InP(001)-(2 x 1) surface: a hydrogen stabilized structure

Unraveling Electron Dynamics in p-type Indium Phosphide (100): A Time-Resolved Two-Photon Photoemission Study

Renewable ("green") hydrogen production through direct photoelectrochemical (PEC) water splitting is a potential key contributor to the sustainable energy mix of the future. We investigate the potential of indium phosphide (InP) as a reference material among III-V semiconductors for PEC and photovoltaic (PV) applications. The p(2 × 2)/c(4 × 2)-reconstructed phosphorus-terminated p-doped InP(100) (P-rich p-InP) surface is the focus of our investigation. We employ time-resolved two-photon photoemission (tr-2PPE) spectroscopy to study electronic states near the band gap with an emphasis on normally unoccupied conduction band states that are inaccessible through conventional single-photon emission methods. The study shows the complexity of the p-InP electronic band structure and reveals the presence of at least nine distinct states between the valence band edge and vacuum energy, including a valence band state, a surface defect state pinning the Fermi level, six unoccupied surface resonances within the conduction band, as well as a cluster of states about 1.6 eV above the CBM, identified as a bulk-to-surface transition. Furthermore, we determined the decay constants of five of the conduction band states, enabling us to track electron relaxation through the bulk and surface conduction bands. This comprehensive understanding of the electron dynamics in p-InP(100) lays the foundation for further exploration and surface engineering to enhance the properties and applications of p-InP-based III-V-compounds for, e.g., efficient and cost-effective PEC hydrogen production and highly efficient PV cells.

Data reduction for spatially resolved reflectance anisotropy spectrometer

We show that in spatially resolved reflectance anisotropy (RA) spectrometers, off-axis optical rays introduce a spurious signal component that cannot be addressed by optical alignment. Such a component is associated with the difference between the reflectivities s and p of the sample and depends, in a complex manner, on the incidence position of the incident light on the surface of the sample. We report a data-reduction procedure to easily identify and remove spurious RA signals associated with the off-axis optical rays, based on the singular value decomposition analysis of spatially resolved RA spectra. We validated this approach by developing a spatially resolved RA spectrometer based on an 8 × 8 multi-anode photomultiplier (PMT). The PMT allowed the use of phase-sensitive detection techniques to enhance the signal-to-noise ratio, which is essential for the evaluation of the proposed data reduction procedure.

P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water

Stable InP (001) surfaces are characterized by fully occupied and empty surface states close to the bulk valence and conduction band edges, respectively. The present photoemission data show, however, a surface Fermi level pinning only slightly below the midgap energy which gives rise to an appreciable surface band bending. By means of density functional theory calculations, it is shown that this apparent discrepancy is due to surface defects that form at finite temperature. In particular, the desorption of hydrogen from metalorganic vapor phase epitaxy grown P-rich InP (001) surfaces exposes partially filled P dangling bonds that give rise to band gap states. These defects are investigated with respect to surface reactivity in contact with molecular water by low-temperature water adsorption experiments using photoemission spectroscopy and are compared to our computational results. Interestingly, these hydrogen-related gap states are robust with respect to water adsorption, provided that water does not dissociate. Because significant water dissociation is expected to occur at steps rather than terraces, surface band bending of a flat InP (001) surface is not affected by water exposure.

Water/InP(001) from Density Functional Theory

The interface between water and the In-rich InP(001) surface is studied by density functional theory with water coverage ranging from single molecules to multiple overlayers. Single molecules attach preferably to three-fold coordinated surface In atoms. Water dissociation is energetically favorable but hindered by an energy barrier that decreases with increasing water coverage. There is an attractive interaction between InP adsorbed water molecules that leads to the formation of molecular clusters and complete water films for water-rich preparation conditions. Water films on InP are stabilized by anchoring to surface-bonded hydroxyl groups. With increasing thickness, the water films resemble the structural properties of ice Ih. The oxygen and hydrogen evolution reactions on InP are characterized by overpotentials of the order of 1.7-1.8 and 0.2-0.3 eV, respectively. While the calculated bulk positions of the InP band edges are outside the range of the redox potentials for oxygen and hydrogen evolution within local DFT, the situation is different at the actual interface: Here, the interface dipole lifts the InP valence band maximum above the redox potential for oxygen evolution and favors hydrogen evolution.

InP and AlInP(001)(2 × 4) Surface Oxidation from Density Functional Theory

The atomic structure and electronic properties of the InP and Al0.5In0.5P(001) surfaces at the initial stages of oxidation are investigated via density functional theory. Thereby, we focus on the mixed-dimer (2 × 4) surfaces stable for cation-rich preparation conditions. For InP, the top In-P dimer is the most favored adsorption site, while it is the second-layer Al-Al dimer for AlInP. The energetically favored adsorption sites yield group III-O bond-related states in the energy region of the bulk band gap, which may act as recombination centers. Consistently, the In p state density around the conduction edge is found to be reduced upon oxidation.

Controlling the growth of multiple ordered heteromolecular phases by utilizing intermolecular repulsion

Metal/organic interfaces and their structural, electronic, spintronic and thermodynamic properties have been investigated intensively, aiming to improve and develop future electronic devices. In this context, heteromolecular phases add new design opportunities simply by combining different molecules. However, controlling the desired phases in such complex systems is a challenging task. Here, we report an effective way of steering the growth of a bimolecular system composed of adsorbate species with opposite intermolecular interactions-repulsive and attractive, respectively. The repulsive species forms a two-dimensional lattice gas, the density of which controls which crystalline phases are stable. Critical gas phase densities determine the constant-area phase diagram that describes our experimental observations, including eutectic regions with three coexisting phases. We anticipate the general validity of this type of phase diagram for binary systems containing two-dimensional gas phases, and also show that the density of the gas phase allows engineering of the interface structure.

Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces

First-principles phase diagrams of bismuth-stabilized GaAs- and InP(100) surfaces demonstrate for the first time the presence of anomalous (2x1) reconstructions, which disobey the common electron counting principle. Combining these theoretical results with our scanning-tunneling-microscopy and photoemission measurements, we identify novel (2x1) surface structures, which are composed of symmetric Bi-Bi and asymmetric mixed Bi-As and Bi-P dimers, and find that they are stabilized by stress relief and pseudogap formation.

Step structures on III-V phosphide (001) surfaces: how do steps and Sb affect CuPt ordering of GaInP2?

The observation of III-V phosphide (001)-(2 x 2) surfaces makes it possible to solve a long standing mystery of step structures. First-principles calculations show that a bulklike type-B step on a hydrogenated 2 x 2 surface is more stable than a rebonded one by 1.1 eV/unit step. In contrast, this energy difference for a H-free beta(2 x 4) surface is only 0.5 eV/unit step. The large difference explains why the CuPt ordering of GaInP is stronger in metal-organic chemical vapor deposition than in molecular beam epitaxy. However, a minute amount of Sb will preferentially attach to the 2 x 2 surface steps and induce additional step structures that cause ordering disruption.