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Yang Y, Shi Z, Zhang S, Ma X, Bai J, Fan D, Zang H, Sun X, Li D. Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis. J Phys Chem Lett 2023:6719-6725. [PMID: 37470335 DOI: 10.1021/acs.jpclett.3c01515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/21/2023]
Abstract
Insightful understanding of defect properties and prevention of defect damage are among the biggest issues in the development of photoelectronic devices based on wide-gap III-nitride semiconductors. Here, we have investigated the vacancy-induced carrier nonradiative dynamics in wide-gap III-nitrides (GaN, AlN, and AlxGa1-xN) by ab initio molecular dynamics and nonadiabatic (NA) quantum dynamics simulations since the considerable defect density in epitaxy samples. E-h recombination is hardly affected by Vcation, which created shallow states near the VBM. Our findings demonstrate that VN in AlN creates defect-assisted nonradiative recombination centers and shortens the recombination time (τ) as in the Shockley-Read-Hall (SRH) model. In GaN, VN improves the NA coupling between the CBM and the VBM. Additionally, increasing x in the AlxGa1-xN alloys accelerates nonradiative recombination, which may be an important issue in further improving the IQE of high Al-content AlxGa1-xN alloys. These findings have significant implications for the improvement of wide-gap III-nitrides-based photoelectronic devices.
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Affiliation(s)
- Yuxin Yang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Shoufeng Zhang
- Department of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
| | - Xiaobao Ma
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiangxiao Bai
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dashuo Fan
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hang Zang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Mechanism of Photocurrent Degradation and Contactless Healing in p-Type Mg-Doped Gallium Nitride Thin Films. NANOMATERIALS 2022; 12:nano12060899. [PMID: 35335712 PMCID: PMC8950378 DOI: 10.3390/nano12060899] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/01/2022] [Revised: 02/25/2022] [Accepted: 03/04/2022] [Indexed: 12/04/2022]
Abstract
Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, and deep defect and vacancy traps played a vital role in the LID and healing process. This work provides a contactless way to heal the photocurrent behavior to its initial level, which is desirable in integrated devices.
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Kao CH, Chen KL, Chen JR, Chen SM, Kuo YW, Lee ML, Lee LJH, Chen H. Comparison of Magnesium and Titanium Doping on Material Properties and pH Sensing Performance on Sb 2O 3 Membranes in Electrolyte-Insulator-Semiconductor Structure. MEMBRANES 2021; 12:25. [PMID: 35054551 PMCID: PMC8779276 DOI: 10.3390/membranes12010025] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 12/22/2021] [Accepted: 12/22/2021] [Indexed: 11/23/2022]
Abstract
In this research, electrolyte-insulator-semiconductor (EIS) capacitors with Sb2O3 sensing membranes were fabricated. The results indicate that Mg doping and Ti-doped Sb2O3 membranes with appropriate annealing had improved material quality and sensing performance. Multiple material characterizations and sensing measurements of Mg-doped and Ti doping on Sb2O3 sensing membranes were conducted, including of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). These detailed studies indicate that silicate and defects in the membrane could be suppressed by doping and annealing. Moreover, compactness enhancement, crystallization and grainization, which reinforced the surface sites on the membrane and boosted the sensing factor, could be achieved by doping and annealing. Among all of the samples, Mg doped membrane with annealing at 400 °C had the most preferable material properties and sensing behaviors. Mg-doped Sb2O3-based with appropriate annealing are promising for future industrial ionsensing devices and for possible integration with Sb2O3-based semiconductor devices.
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Affiliation(s)
- Chyuan-Haur Kao
- Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan District, Tao Yuan City 333, Taiwan; (C.-H.K.); (K.-L.C.)
- Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, No. 5 Fuxing St., Guishan District, Taoyuan City 333, Taiwan
- Department of Electronic Engineering, Ming Chi University of Technology, 284 Gungjuan Rd., Taishan Dist., New Taipei City 243, Taiwan
| | - Kuan-Lin Chen
- Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan District, Tao Yuan City 333, Taiwan; (C.-H.K.); (K.-L.C.)
| | - Jun-Ru Chen
- Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan; (J.-R.C.); (S.-M.C.)
| | - Shih-Ming Chen
- Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan; (J.-R.C.); (S.-M.C.)
| | - Yaw-Wen Kuo
- Department of Electrical Engineering, National Chi Nan University, Puli 545, Taiwan;
| | - Ming-Ling Lee
- Department of Electro-Optical Enginnering, Minghsin University of Science and Technology, No.1, Xinxing Rd., Xinfeng 304, Taiwan
| | - Lukas Jyuhn-Hsiarn Lee
- National Institute of Environmental Health Sciences, National Health Research Institutes, Zhunan 350, Taiwan;
| | - Hsiang Chen
- Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan; (J.-R.C.); (S.-M.C.)
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4
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Liu M, Wang Y, Kong X, Tan L, Li L, Cheng S, Botton G, Guo H, Mi Z, Li CJ. Efficient Nitrogen Fixation Catalyzed by Gallium Nitride Nanowire Using Nitrogen and Water. iScience 2019; 17:208-216. [PMID: 31288155 PMCID: PMC6614754 DOI: 10.1016/j.isci.2019.06.032] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2018] [Revised: 04/26/2019] [Accepted: 06/23/2019] [Indexed: 11/30/2022] Open
Abstract
Ammonia is one of the most important bulk chemicals in modern society. However, the highly energy-extensive contemporary industrial production of ammonia was developed in the early 20th century and requires extensive heating of highly pressurized flammable hydrogen gas, whose global production still relies heavily on non-sustainable petroleum. The development of “sustainable” nitrogen fixation process represents a grand aspirational chemical pursuit concerning our future human well-being. Herein, we report an ultra-stable nitride-based photosensitizing semiconductor that enables efficient, sustainable, and mild photochemical nitrogen fixation. The catalyst exhibits strong chemisorption of nitrogen and enables immediate electron donation from its surface vacancy to nitrogen. In addition, it was also demonstrated that the nitride-based semiconductor possesses the potential to minimize electron-hole recombination. Efficient photo-N2 fixation Strong chemisorption of N2 Uses water as H source
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Affiliation(s)
- Mingxin Liu
- Department of Chemistry and FRQNT Centre for Green Chemistry and Catalysts, McGill University, 801 Sherbrooke Ouest, Montreal, QC H3A 0B8, Canada; Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arhor, MI 48109, USA
| | - Yichen Wang
- Department of Electrical and Computer Engineering, McGill University, 3480 University, Montreal, QC H3A 0E9, Canada
| | - Xianghua Kong
- Department of Physics, McGill University, Rutherford Building, 3600 University, Montreal, QC H3A 2T8, Canada
| | - Lida Tan
- Department of Chemistry and FRQNT Centre for Green Chemistry and Catalysts, McGill University, 801 Sherbrooke Ouest, Montreal, QC H3A 0B8, Canada
| | - Lu Li
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, Chemistry Department, Jilin University, Changchun, China
| | - Shaobo Cheng
- Department of Material Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, ON L8S 4M1, Canada
| | - Gianluigi Botton
- Department of Material Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, ON L8S 4M1, Canada
| | - Hong Guo
- Department of Physics, McGill University, Rutherford Building, 3600 University, Montreal, QC H3A 2T8, Canada
| | - Zetian Mi
- Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arhor, MI 48109, USA; Department of Electrical and Computer Engineering, McGill University, 3480 University, Montreal, QC H3A 0E9, Canada.
| | - Chao-Jun Li
- Department of Chemistry and FRQNT Centre for Green Chemistry and Catalysts, McGill University, 801 Sherbrooke Ouest, Montreal, QC H3A 0B8, Canada.
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Kumar A, Mitsuishi K, Hara T, Kimoto K, Irokawa Y, Nabatame T, Takashima S, Ueno K, Edo M, Koide Y. Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates. NANOSCALE RESEARCH LETTERS 2018; 13:403. [PMID: 30539346 PMCID: PMC6289933 DOI: 10.1186/s11671-018-2804-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/12/2018] [Accepted: 11/15/2018] [Indexed: 06/09/2023]
Abstract
Inefficient Mg-induced p-type doping has been remained a major obstacle in the development of GaN-based electronic devices for solid-state lighting and power applications. This study reports comparative structural analysis of defects in GaN layers on freestanding GaN substrates where Mg incorporation is carried out via two approaches: ion implantation and epitaxial doping. Scanning transmission electron microscopy revealed the existence of pyramidal and line defects only in Mg-implanted sample whereas Mg-doped sample did not show presence of these defects which suggests that nature of defects depends upon incorporation method. From secondary ion mass spectrometry, a direct correspondence is observed between Mg concentrations and location and type of these defects. Our investigations suggest that these pyramidal and line defects are Mg-rich species and their formation may lead to reduced free hole densities which is still a major concern for p-GaN-based material and devices. As freestanding GaN substrates offer a platform for realization of p-n junction-based vertical devices, comparative structural investigation of defects originated due to different Mg incorporation processes in GaN layers on such substrates is likely to give more insight towards understanding Mg self-compensation mechanisms and then optimizing Mg doping and/or implantation process for the advancement of GaN-based device technology.
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Affiliation(s)
- Ashutosh Kumar
- National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
| | - Kazutaka Mitsuishi
- National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
| | - Toru Hara
- National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
| | - Koji Kimoto
- National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
| | - Yoshihiro Irokawa
- National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
| | - Toshihide Nabatame
- National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
| | | | | | - Masaharu Edo
- Fuji Electric Co., Ltd., Hino, Tokyo, 191-8502 Japan
| | - Yasuo Koide
- National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
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6
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Wahl U, Amorim LM, Augustyns V, Costa A, David-Bosne E, Lima TAL, Lippertz G, Correia JG, da Silva MR, Kappers MJ, Temst K, Vantomme A, Pereira LMC. Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations. PHYSICAL REVIEW LETTERS 2017; 118:095501. [PMID: 28306281 DOI: 10.1103/physrevlett.118.095501] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2016] [Indexed: 06/06/2023]
Abstract
Radioactive ^{27}Mg (t_{1/2}=9.5 min) was implanted into GaN of different doping types at CERN's ISOLDE facility and its lattice site determined via β^{-} emission channeling. Following implantations between room temperature and 800 °C, the majority of ^{27}Mg occupies the substitutional Ga sites; however, below 350 °C significant fractions were also found on interstitial positions ∼0.6 Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p type with 2×10^{19} cm^{-3} stable Mg during epilayer growth, and lowest in Si-doped n-GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350 °C converts interstitial ^{27}Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV.
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Affiliation(s)
- U Wahl
- Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela, Portugal
| | - L M Amorim
- KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven, Belgium
| | - V Augustyns
- KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven, Belgium
| | - A Costa
- Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela, Portugal
| | - E David-Bosne
- Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela, Portugal
| | - T A L Lima
- KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven, Belgium
| | - G Lippertz
- KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven, Belgium
| | - J G Correia
- Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela, Portugal
| | - M R da Silva
- Centro de Física Nuclear da Universidade de Lisboa, 1649-003 Lisboa, Portugal
| | - M J Kappers
- Cambridge Centre for Gallium Nitride, University of Cambridge, Cambridge CB3 0FS, United Kingdom
| | - K Temst
- KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven, Belgium
| | - A Vantomme
- KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven, Belgium
| | - L M C Pereira
- KU Leuven, Instituut voor Kern- en Stralingsfysica, 3001 Leuven, Belgium
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7
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Ion- and Photo-Analysis of Metal Chelate Reactions on the Semiconductor Surface. J CHIN CHEM SOC-TAIP 2013. [DOI: 10.1002/jccs.200600188] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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8
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Umeda T, Son NT, Isoya J, Janzén E, Ohshima T, Morishita N, Itoh H, Gali A, Bockstedte M. Identification of the carbon antisite-vacancy pair in 4H-SiC. PHYSICAL REVIEW LETTERS 2006; 96:145501. [PMID: 16712089 DOI: 10.1103/physrevlett.96.145501] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2005] [Indexed: 05/09/2023]
Abstract
The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacancy pair in the negative charge state (C(Si)V-(C)) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.
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Affiliation(s)
- T Umeda
- University of Tsukuba, Tsukuba 305-8550, Japan
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9
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Liliental-Weber Z, Tomaszewicz T, Zakharov D, Jasinski J, O'Keefe MA. Atomic structure of defects in GaN:Mg grown with Ga polarity. PHYSICAL REVIEW LETTERS 2004; 93:206102. [PMID: 15600942 DOI: 10.1103/physrevlett.93.206102] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2004] [Indexed: 05/24/2023]
Abstract
The atomic structure of characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities within the defects have inside walls covered by GaN of reverse polarity. We propose that lateral overgrowth of the cavities restores matrix polarity on the defect base. From matrix to defect, exchange of Ga and N sublattices leads to a 0.6+/-0.2 A displacement of Ga sublattices. We observe a [1100]/3 shift from matrix AB stacking to BC stacking for the entire pyramid. Electron energy loss spectroscopy detected changes in N edge and presence of oxygen on the defect walls. Our results explain commonly observed decrease of acceptor concentration in heavily doped GaN:Mg.
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Affiliation(s)
- Z Liliental-Weber
- Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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10
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Lung CH, Peng SM, Chang CC. Linear Metal Atom Chain on GaN(0001) by Chemical Vapor Deposition. J Phys Chem B 2004. [DOI: 10.1021/jp047324k] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Affiliation(s)
- Chien-Hua Lung
- Department of Chemistry, National Taiwan University, Taipei, Taiwan, R.O.C. 10617
| | - Shie-Ming Peng
- Department of Chemistry, National Taiwan University, Taipei, Taiwan, R.O.C. 10617
| | - Che-Chen Chang
- Department of Chemistry, National Taiwan University, Taipei, Taiwan, R.O.C. 10617
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Tuomisto F, Ranki V, Saarinen K, Look DC. Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO. PHYSICAL REVIEW LETTERS 2003; 91:205502. [PMID: 14683373 DOI: 10.1103/physrevlett.91.205502] [Citation(s) in RCA: 42] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2003] [Indexed: 05/20/2023]
Abstract
We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated (E(el)=2 MeV, fluence 6 x 10(17) cm(-2)) ZnO samples. The Zn vacancies are identified at concentrations of [V(Zn)] approximately 2 x 10(15) cm(-3) in the as-grown material and [V(Zn)] approximately 2 x 10(16) cm(-3) in the irradiated ZnO. These concentrations are in very good agreement with the total acceptor density determined by temperature dependent Hall experiments. Thus, the Zn vacancies are dominant acceptors in both as-grown and irradiated ZnO.
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Affiliation(s)
- F Tuomisto
- Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015 HUT, Finland.
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