Covalent and reversible short-range electrostatic imaging in noncontact atomic force microscopy

Atomically Precise Manufacturing of Silicon Electronics

Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products. It has been developed most successfully using scanning probe methods and has received particular attention for developing atom scale electronics with a focus on silicon-based systems. This review captures the development of silicon atom-based electronics and is divided into several sections that will cover characterization and atom manipulation of silicon surfaces with scanning tunneling microscopy and atomic force microscopy, development of silicon dangling bonds as atomic quantum dots, creation of atom scale devices, and the wiring and packaging of those circuits. The review will also cover the advance of silicon dangling bond logic design and the progress of silicon quantum atomic designer (SiQAD) simulators. Finally, an outlook of APM and silicon atom electronics will be provided.

Development of low-temperature and ultrahigh-vacuum photoinduced force microscopy

In this paper, we develop optical and electronic systems for photoinduced force microscopy (PiFM) that can measure photoinduced forces under low temperature and ultrahigh vacuum (LT-UHV) without artifacts. For our LT-UHV PiFM, light is irradiated from the side on the tip-sample junction, which can be adjusted through the combination of an objective lens inside the vacuum chamber and a 90° mirror outside the vacuum chamber. We measured photoinduced forces due to the electric field enhancement between the tip and the Ag surface, and confirmed that photoinduced force mapping and measurement of photoinduced force curves were possible using the PiFM that we developed. The Ag surface was used to measure the photoinduced force with high sensitivity, and it is effective in enhancing the electric field using the plasmon gap mode between the metal tip and the metal surface. Additionally, we confirmed the necessity of Kelvin feedback during the measurement of photoinduced forces, to avoid artifacts due to electrostatic forces, by measuring photoinduced forces on organic thin films. The PiFM, operating under low temperature and ultrahigh vacuum developed here, is a promising tool to investigate the optical properties of various materials with very high spatial resolution.

CO tip functionalization inverts atomic force microscopy contrast via short-range electrostatic forces

We investigate insulating Cu2N islands grown on Cu(100) by means of combined scanning tunneling microscopy and atomic force microscopy with two vastly different tips: a bare metal tip and a CO-terminated tip. We use scanning tunneling microscopy data as proposed by Choi, Ruggiero, and Gupta to unambiguously identify atomic positions. Atomic force microscopy images taken with the two different tips show an inverted contrast over Cu2N. The observed force contrast can be explained with an electrostatic model, where the two tips have dipole moments of opposite directions. This highlights the importance of short-range electrostatic forces in the formation of atomic contrast on polar surfaces in noncontact atomic force microscopy.

Reversal of atomic contrast in scanning probe microscopy on (111) metal surfaces

We study the origin of atomic contrast on Cu(111) and Pt(111) surfaces probed by a non-contact atomic force microscope and scanning tunnelling microscope. First-principles simulations of the interaction between the atoms of the scanning tip and those of the probed surface show a dependence of the resulting contrast on the tip-sample distance and reveal a close relation between contrast changes and relaxation of atomic positions in both the tip and the sample. Contrast reversion around the distance where the short-range attractive atomic force reaches its maximum is predicted for both types of microscopies. We also demonstrate a relation between the maximal attractive force in a F-z atomic force spectroscopy and the chemical identity of the apex atom on the imaging tip.

Interplay of the tip-sample junction stability and image contrast reversal on a Cu(111) surface revealed by the 3D force field

Non-contact atomic force microscopy is used to measure the 3D force field on a dense-packed Cu(111) surface. An unexpected image contrast reversal is observed as the tip is moved towards the surface, with atoms appearing first as bright spots, whereas hollow and bridge sites turn bright at smaller tip-sample distances. Computer modeling is used to elucidate the nature of the image contrast. We find that the contrast reversal is essentially a geometrical effect, which, unlike in gold, is observable in Cu due to an unusually large stability of the tip-sample junction over large distances.

Atomic force microscopy as a tool for atom manipulation

During the past 20 years, the manipulation of atoms and molecules at surfaces has allowed the construction and characterization of model systems that could, potentially, act as building blocks for future nanoscale devices. The majority of these experiments were performed with scanning tunnelling microscopy at cryogenic temperatures. Recently, it has been shown that another scanning probe technique, the atomic force microscope, is capable of positioning single atoms even at room temperature. Here, we review progress in the manipulation of atoms and molecules with the atomic force microscope, and discuss the new opportunities presented by this technique.

Ab initio simulation of atomic-scale imaging in noncontact atomic force microscopy

In this paper, we summarize some results of our ab initio simulations aimed at investigating the mechanism of the NC-AFM image contrast on semiconductor and metallic surfaces. We start with an introduction into the basic ideas behind the ab initio simulation process of the NC-AFM experimental results. Our simulations reveal that the interaction of a clean silicon tip with a semiconductor surface like InAs(110) might lead to bond-formation and bond-breaking processes during the approach and retraction of the tip. This imaging mechanism is very similar to that observed on a metallic surface like Ag(110). Interestingly, a clean silicon tip can become contaminated with Ag surface atoms. On both types of surface we observe a significant energy dissipation which is caused by a hysteresis in the tip-sample force curves calculated on the approach and retraction path.

Atomic-scale sharpening of silicon tips in noncontact atomic force microscopy

The atomic-scale stability of clean silicon tips used in noncontact atomic force microscopy (NC-AFM) is simulated by ab initio calculations based on density functional theory. The tip structures are modeled by silicon clusters with and termination. For the often assumed Si(111)-type tip we observe the sharpening of the initially blunt tip via short-range chemical forces during the first approach and retraction cycle. The structural changes corresponding to this intrinsic process are irreversible and lead to stable NC-AFM imaging conditions. In opposition to the picture used in literature, the Si(001)-type tip does not exhibit the so-called "two-dangling bond" feature as a bulklike termination suggests.

Nanomanipulation using only mechanical energy

We present the first computational study targeting the nanomanipulation capability of dynamic surface force microscopy. Using a very simple but challenging model, an antisite defect on a III-V(110) surface, we show how the defect can be manipulated in both the attractive and the repulsive modes and identify the role of the tip-sample interaction: either lowering the barriers or pushing the system over a high stress state using exclusively the mechanical energy stored in the oscillating cantilever. Our study also sheds light on other key issues, such as chemical resolution, explaining why vacancies are the only defects imaged in topography, and dissipation contrast formation, identifying a physical mechanism to explain the intriguing small shift between topographical and damping images.