Adatom ascending at step edges and faceting on fcc metal (110) surfaces

Large-Substrate-Terrace Confined Growth of Arrayed Ultrathin PtSe2 Ribbons on Step-Bunched Vicinal Au(001) Facets Toward Electrocatalytic Applications

Ultrathin PtSe2 ribbons can host spin-polarized edge states and distinct edge electrocatalytic activity, emerging as a promising candidate for versatile applications in various fields. However, the direct synthesis is still challenging and the growth mechanism is still unclear. Herein, the arrayed growth of ultrathin PtSe2 ribbons on bunched vicinal Au(001) facets, via a facile chemical vapor deposition (CVD) route is reported. The ultrathin PtSe2 flakes can transform from traditional irregular shapes to desired ribbon shapes by increasing the height of bunched and unidirectionally oriented Au steps (with step height hstep) is found. This crossover, occurring at hstep ≈ 3.0 nm, defines the tailored growth from step-flow to single-terrace-confined modes, as validated by density functional theory calculations of the different system energies. On the millimeter-scale single-crystal Au(001) films with aligned steps, the arrayed ultrathin PtSe2 ribbons with tunable width of ≈20-1000 nm, which are then served as prototype electrocatalysts for hydrogen evolution reaction (HER) is achieved. This work should represent a huge leap in the direct synthesis and the mechanism exploration of arrayed ultrathin transition-metal dichalcogenides (TMDCs) ribbons, which should stimulate further explorations of the edge-related physical properties and practical applications.

Step-Edge Directed Metal Oxidation

Metal surface oxidation is governed by surface mass transport processes. Realistic surfaces have many defects such as step edges, which often dictate the oxide growth dynamics and result in novel oxide nanostructures. Here we present a comprehensive and systematic study of the oxidation of stepped (100), (110) and (111) Cu surfaces using a multiscale approach employing density functional theory (DFT) and reactive force field molecular dynamics (MD) simulations. We show that the early stages of oxidation of these stepped surfaces can be qualitatively understood from the potential energy surface of single oxygen adatoms, namely, adsorption energies and Ehrlich-Schwöbel barriers. These DFT predictions are then validated using classical MD simulations with a newly optimized ReaxFF force field. In turn, we show that the DFT results can be explained using a simple bond-counting argument that makes our results general and transferable to other metal surfaces.

From covalent bonding to coalescence of metallic nanorods

Growth of metallic nanorods by physical vapor deposition is a common practice, and the origin of their dimensions is a characteristic length scale that depends on the three-dimensional Ehrlich-Schwoebel (3D ES) barrier. For most metals, the 3D ES barrier is large so the characteristic length scale is on the order of 200 nm. Using density functional theory-based ab initio calculations, this paper reports that the 3D ES barrier of Al is small, making it infeasible to grow Al nanorods. By analyzing electron density distributions, this paper shows that the small barrier is the result of covalent bonding in Al. Beyond the infeasibility of growing Al nanorods by physical vapor deposition, the results of this paper suggest a new mechanism of controlling the 3D ES barrier and thereby nanorod growth. The modification of local degree of covalent bonding, for example, via the introduction of surfactants, can increase the 3D ES barrier and promote nanorod growth, or decrease the 3D ES barrier and promote thin film growth.

Accelerated molecular dynamics simulation of thin-film growth with the bond-boost method

We review the bond-boost method for accelerated molecular dynamics (MD) simulation and we demonstrate its application to kinetic phenomena relevant to thin-film growth. To illustrate various aspects of the method, three case studies are presented. We first illustrate aspects of the bond-boost method in studies of the diffusion of Cu atoms on Cu(001). In these studies, Cu interactions are described using a semi-empirical embedded-atom method potential. We recently extended the bond-boost method to perform accelerated ab initio MD (AIMD) simulations and we present results from preliminary studies in which we applied the bond-boost method in AIMD to uncover diffusion mechanisms of Al adatoms on Al(110). Finally, a problem inherent to many rare-event simulation methods is the 'small-barrier problem', in which the system resides in a group of states connected by small energy barriers and separated from the rest of phase space by large barriers. We developed the state-bridging bond-boost method to address this problem and we discuss its application for studying the diffusion of Co clusters on Cu(001). We discuss the outlook for future applications of the bond-boost method in materials simulation.

Effects of long jumps, reversible aggregation, and Meyer-Neldel rule on submonolayer epitaxial growth

We demonstrate, using kinetic Monte Carlo simulations of submonolayer epitaxial growth, that long jumps and reversible aggregation have a major impact on the evolution of island morphologies. Long jumps are responsible for a supra-Arrhenius behavior of the effective diffusion coefficient as the attachment and detachment kinetics give rise to a bimodal island size distribution that depends on temperature and long jump extent limits. As the islands density increases with temperature, the average size of stable islands reaches a maximum before decreasing. We have also observed that the diffusion coefficient cannot be used alone to predict the evolution of island sizes and morphologies, the relative rate of each process having a major importance. Our theoretical developments are of direct relevance for materials systems such as Au, Pd, Ag, Cu, Ni, H/Si , H/W(110), Co/Ru , and Co/Ru(S), that are known for exhibiting a compensation effect that cannot be contained within experimental uncertainties.

Renormalization of stochastic lattice models: epitaxial surfaces

We present the application of a method [C. A. Haselwandter and D. D. Vvedensky, Phys. Rev. E 76, 041115 (2007)] for deriving stochastic partial differential equations from atomistic processes to the morphological evolution of epitaxial surfaces driven by the deposition of new material. Although formally identical to the one-dimensional (1D) systems considered previously, our methodology presents substantial additional technical issues when applied to two-dimensional (2D) surfaces. Once these are addressed, subsequent coarse-graining is accomplished as before by calculating renormalization-group (RG) trajectories from initial conditions determined by the regularized atomistic models. Our applications are to the Edwards-Wilkinson (EW) model [S. F. Edwards and D. R. Wilkinson, Proc. R. Soc. London, Ser. A 381, 17 (1982)], the Wolf-Villain (WV) model [D. E. Wolf and J. Villain, Europhys. Lett. 13, 389 (1990)], and a model with concurrent random deposition and surface diffusion. With our rules for the EW model no appreciable crossover is obtained for either 1D or 2D substrates. For the 1D WV model, discussed previously, our analysis reproduces the crossover sequence known from kinetic Monte Carlo (KMC) simulations, but for the 2D WV model, we find a transition from smooth to unstable growth under repeated coarse-graining. Concurrent surface diffusion does not change this behavior, but can lead to extended transient regimes with kinetic roughening. This provides an explanation of recent experiments on Ge(001) with the intriguing conclusion that the same relaxation mechanism responsible for ordered structures during the early stages of growth also produces an instability at longer times that leads to epitaxial breakdown. The RG trajectories calculated for concurrent random deposition and surface diffusion reproduce the crossover sequences observed with KMC simulations for all values of the model parameters, and asymptotically always approach the fixed point corresponding to the equation proposed by Villain [J. Phys. I 1, 19 (1991)] and by Lai and Das Sarma [Phys. Rev. Lett. 66, 2899 (1991)]. We conclude with a discussion of the application of our methodology to other growth settings.

Kinetic versus thermodynamic control over growth process of electrodeposited Bi/BiSb superlattice nanowires

The growth mechanism of the electrodeposited single crystalline nanowires is generally considered to follow a three-dimensional to two-dimensional (2D) transition mode, and as for the 2D growth, it is ordinarily considered as a plane growth mode (layer-by-layer growth mechanism). We report in this Letter the growth of Bi/BiSb superlattice nanowires by adopting a charge-controlled pulse electrodeposition technique, and to our best knowledge, different growth modes of the nanowires, the 2D plane growth mode, the tilted plane growth mode, and the curved plane growth mode, were first observed. These growth modes were gathered and analyzed from the perspectives of crystal growth as well as kinetics and thermodynamics. It is shown that the superlattice nanowires are good structures for studying the growth mechanism of electrodeposited nanowires. This work will deeply benefit the understanding of the growth process of the electrodeposited nanowires and provide important experiment data to crystal growth theory.

The replacement reaction controlling the fractal assembly of copper nanoparticles

In this paper we describe a fractal assembly of copper nanoparticles on different substrates by controlling the chemical replacement reaction. Through calculation, we found that the 'fractal dimensions' of copper dendrites synthesized by us were about 1.832, which agreed well with the 'fractal dimensions' of natural fern leaves (fractal dimension, 1.826), suggesting that the fern fractal model was useful to describe the self-assembly of our copper nanoparticles during the chemical replacement reaction process. These results will be beneficial for the understanding of the role that highly nonequilibrium conditions play in the formation of fractal clusters as well as the self-assembly mystique of metallic nanoparticles in nonequilibrium conditions and also helpful in the future assembly of complicated nanoarchitectures of metallic nanoparticles for potential applications.

Kinetics of facile bilayer island formation at low temperature: Ag/NiAl(110)

Facile nucleation and growth of bilayer Ag(110) islands on NiAl(110) is observed by STM for Ag deposition at temperatures as low as 127 K. Density functional theory analysis for supported Ag films determines adatom adsorption energies (which favor bilayer islands), interaction energies, and diffusion barriers. Analysis of an atomistic lattice-gas model incorporating these energies elucidates the role of strongly anisotropic interactions in enabling the upward mass transport needed for bilayer island formation.

Renormalization of stochastic lattice models: basic formulation

We describe a general method for the multiscale analysis of stochastic lattice models. Beginning with a lattice Langevin formulation of site fluctuations, we derive stochastic partial differential equations by regularizing the transition rules of the model. Subsequent coarse graining is accomplished by calculating renormalization-group (RG) trajectories from initial conditions determined by the regularized atomistic models. The RG trajectories correspond to hierarchies of continuum equations describing lattice models over expanding length and time scales. These continuum equations retain a quantitative connection over different scales, as well as to the underlying atomistic dynamics. This provides a systematic method for the derivation of continuum equations from the transition rules of lattice models for any length and time scales. As an illustration we consider the one-dimensional (1D) Wolf-Villain (WV) model [Europhys. Lett. 13, 389 (1990)]. The RG analysis of this model, which we develop in detail, is generic and can be applied to a wide range of conservative lattice models. The RG trajectory of the 1D WV model shows a complex crossover sequence of linear and nonlinear stochastic differential equations, which is in excellent agreement with kinetic Monte Carlo simulations of this model. We conclude by discussing possible applications of the multiscale method described here to other nonequilibrium systems.

Dislocation injection, reconstruction, and atomic transport on {001} Au terraces

High-resolution electron microscopy investigations of Au films show that adatoms on (100) surfaces insert into the underlying terrace to form surface dislocations. This injection readily occurs when the number of adatoms on a terrace is approximately 20 atoms or less. The surface dislocation glides along the terrace, but is repelled from the edges. The dislocation escapes by squeezing out in the dislocation line direction (not gliding out the terrace edge). Atomistic simulations confirm the dislocation stability, easy glide along the terrace and trapping at the terrace edge. These results have profound implications for film growth.

Impact-driven effects in thin-film growth: steering and transient mobility at the Ag(110) surface

Low-energy atomic impacts on the Ag(110) surface are investigated by molecular dynamics simulations based on reliable many-body semiempirical potentials. Trajectory deflections (steering) caused by the atom-surface interaction are observed, together with impact-following, transient-mobility effects. Such processes are quantitatively analysed and their dependence on the initial kinetic energy and on the impinging direction is discussed. A clear influence of the surface anisotropy on both steering and transient mobility effects is revealed by our simulations for the simple isolated-atom case and in the submonolayer-growth regime. For the latter case, we illustrate how steering and transient mobility affect the film morphology at the nanoscale.