Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence x-ray anomalous diffraction

FORTE - a multipurpose high-vacuum diffractometer for tender X-ray diffraction and spectroscopy at the SIRIUS beamline of Synchrotron SOLEIL

A new high-vacuum multipurpose diffractometer (called FORTE from the French acronyms of the project) has recently been installed at the tender/hard X-ray SIRIUS beamline of Synchrotron SOLEIL, France. The geometry chosen allows one to work either in the classical Eulerian four-circle geometry for bulk X-ray diffraction (XRD) or in the z-axis geometry for surface XRD. The diffractometer nicely fits the characteristics of the SIRIUS beamline, optimized to work in the 1.1-4.5 keV range, and allows one to perform unprecedented diffraction anomalous fine structure (DAFS) experiments in the tender X-ray region, also around non-specular reflections, covering a large reciprocal-space volume. Installation of an X-ray fluorescence detector on a dedicated flange allows simultaneous DAFS and X-ray absorption (XAS) measurements. The access to the tender X-ray region paves the way to resonant investigations around the L-edges of second-row transition elements which are constituents of functional oxide materials. It also enables access to several edges of interest for semiconductors. Finally, the control architecture based on synchronized Delta Tau units opens up exciting perspectives for improvement of the mechanical sphere of confusion.

Element-specific structural analysis of Si/B4C using resonant X-ray reflectivity

Element-specific structural analysis at the buried interface of a low electron density contrast system is important in many applied fields. The analysis of nanoscaled Si/B4C buried interfaces is demonstrated using resonant X-ray reflectivity. This technique combines information about spatial modulations of charges provided by scattering, which is further enhanced near the resonance, with the sensitivity to electronic structure provided by spectroscopy. Si/B4C thin-film structures are studied by varying the position of B4C in Si layers. Measured values of near-edge optical properties are correlated with the resonant reflectivity profile to quantify the element-specific composition. It is observed that, although Si/B4C forms a smooth interface, there are chemical changes in the sputtered B4C layer. Nondestructive quantification of the chemical changes and the spatial distribution of the constituents is reported.

Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates

We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction yields that nucleation in the pits provides a higher relaxation. Using an innovative, model-free fitting procedure based on self-consistent solutions of the elastic problem, we provide compositional and elastic-energy maps. Islands grown on flat substrates exhibit stronger composition gradients and do not show a monotonic decrease of elastic energy with height. Both phenomena are explained using both thermodynamic and kinetic arguments.