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Pettinari G, Marotta G, Biccari F, Polimeni A, Felici M. Tailoring the optical properties of dilute nitride semiconductors at the nanometer scale. NANOTECHNOLOGY 2021; 32:185301. [PMID: 33503600 DOI: 10.1088/1361-6528/abe073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report on the innovative approaches we developed for the fabrication of site-controlled semiconductor nanostructures [e.g. quantum dots (QDs), nanowires], based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductor alloys [e.g. Ga(AsN) and (InGa)(AsN)]. In such systems, the formation of stable nitrogen-hydrogen complexes removes the effects nitrogen has on the alloy properties, which in turn paves the way to the direct engineering of the material's electronic-and, thus, optical-properties: not only the bandgap energy, but also the refractive index and the polarization properties of the system can indeed be tailored with high precision and in a reversible manner. Here, lithographic approaches and/or plasmon-assisted optical irradiation-coupled to the ultra-sharp diffusion profile of hydrogen in dilute nitrides-are employed to control the hydrogen implantation and/or removal process at a nanometer scale. This results in a highly deterministic control of the spatial and spectral properties of the fabricated nanostructures, eventually obtaining semiconductor nanowires with controlled polarization properties, as well as site-controlled QDs with an extremely high control on their spatial and spectral properties. The nanostructures fabricated with these techniques, whose optical properties have also been simulated by finite-element-method calculations, are naturally suited for a deterministic coupling in optical nanocavities (i.e. photonic crystal cavities and circular Bragg resonators) and are therefore of potential interest for emerging quantum technologies.
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Affiliation(s)
- Giorgio Pettinari
- Institute for Photonics and Nanotechnologies (CNR-IFN), National Research Council, Via Cineto Romano 42, I-00156 Roma, Italy
| | - Gianluca Marotta
- Department of Physics, Sapienza University of Rome, P.le A. Moro 5, I-00185 Roma, Italy
| | - Francesco Biccari
- Department of Physics and Astronomy, University of Florence, via Sansone 1, I-50019 Sesto Fiorentino (FI), Italy
| | - Antonio Polimeni
- Department of Physics, Sapienza University of Rome, P.le A. Moro 5, I-00185 Roma, Italy
| | - Marco Felici
- Department of Physics, Sapienza University of Rome, P.le A. Moro 5, I-00185 Roma, Italy
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Balagula RM, Jansson M, Yukimune M, Stehr JE, Ishikawa F, Chen WM, Buyanova IA. Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires. Sci Rep 2020; 10:8216. [PMID: 32427905 PMCID: PMC7237432 DOI: 10.1038/s41598-020-64958-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2020] [Accepted: 04/27/2020] [Indexed: 11/10/2022] Open
Abstract
Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is often involved during device fabrication and can also be used to improve their optical and transport properties. However, effects of such annealing on alloy disorder and strain in core/shell NWs are not fully understood. In this work we investigate these effects in novel core/shell/shell GaAs/GaNAs/GaAs NWs grown by molecular beam epitaxy on (111) Si substrates. By employing polarization-resolved photoluminescence measurements, we show that annealing (i) improves overall alloy uniformity due to suppressed long-range fluctuations in the N composition; (ii) reduces local strain within N clusters acting as quantum dot emitters; and (iii) leads to partial relaxation of the global strain caused by the lattice mismatch between GaNAs and GaAs. Our results, therefore, underline applicability of such treatment for improving optical quality of NWs from highly-mismatched alloys. They also call for caution when using ex-situ annealing in strain-engineered NW heterostructures.
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Affiliation(s)
- Roman M Balagula
- Department of Physics, Chemistry and Biology, Linköping University, 581 83, Linköping, Sweden
| | - Mattias Jansson
- Department of Physics, Chemistry and Biology, Linköping University, 581 83, Linköping, Sweden.
| | - Mitsuki Yukimune
- Graduate School of Science and Engineering, Ehime University, 790-8577, Matsuyama, Japan
| | - Jan E Stehr
- Department of Physics, Chemistry and Biology, Linköping University, 581 83, Linköping, Sweden
| | - Fumitaro Ishikawa
- Graduate School of Science and Engineering, Ehime University, 790-8577, Matsuyama, Japan
| | - Weimin M Chen
- Department of Physics, Chemistry and Biology, Linköping University, 581 83, Linköping, Sweden
| | - Irina A Buyanova
- Department of Physics, Chemistry and Biology, Linköping University, 581 83, Linköping, Sweden
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Eales TD, Marko IP, Schulz S, O'Halloran E, Ghetmiri S, Du W, Zhou Y, Yu SQ, Margetis J, Tolle J, O'Reilly EP, Sweeney SJ. Ge 1-xSn x alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration. Sci Rep 2019; 9:14077. [PMID: 31575881 PMCID: PMC6773784 DOI: 10.1038/s41598-019-50349-z] [Citation(s) in RCA: 28] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2019] [Accepted: 08/29/2019] [Indexed: 11/17/2022] Open
Abstract
In this work we study the nature of the band gap in GeSn alloys for use in silicon-based lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from both experiment and ab-initio theory that the (direct) Γ-character of the GeSn band gap changes continuously with alloy composition and has significant Γ-character even at low (6%) Sn concentrations. The evolution of the Γ-character is due to Sn-induced conduction band mixing effects, in contrast to the sharp indirect-to-direct band gap transition obtained in conventional alloys such as Al1−xGaxAs. Understanding the band mixing effects is critical not only from a fundamental and basic properties viewpoint but also for designing photonic devices with enhanced capabilities utilizing GeSn and related material systems.
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Affiliation(s)
- Timothy D Eales
- Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, United Kingdom
| | - Igor P Marko
- Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, United Kingdom
| | - Stefan Schulz
- Tyndall National Institute, Lee Maltings, Cork, T12 R5CP, Ireland
| | - Edmond O'Halloran
- Tyndall National Institute, Lee Maltings, Cork, T12 R5CP, Ireland.,School of Chemistry, University College Cork, Cork, T12 YN60, Ireland
| | - Seyed Ghetmiri
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Wei Du
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.,Department of Electrical Engineering, Wilkes University, Wilkes-Barre, PA, 18766, USA
| | - Yiyin Zhou
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Shui-Qing Yu
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Joe Margetis
- ASM, 3440 East University Drive, Phoenix, Arizona, 85034, USA
| | - John Tolle
- ASM, 3440 East University Drive, Phoenix, Arizona, 85034, USA
| | - Eoin P O'Reilly
- Tyndall National Institute, Lee Maltings, Cork, T12 R5CP, Ireland.,Department of Physics, University College Cork, Cork, T12 YN60, Ireland
| | - Stephen J Sweeney
- Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, United Kingdom.
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Buyanova IA, Chen WM. Dilute nitrides-based nanowires-a promising platform for nanoscale photonics and energy technology. NANOTECHNOLOGY 2019; 30:292002. [PMID: 30933933 DOI: 10.1088/1361-6528/ab1516] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Dilute nitrides are novel III-V-N semiconductor alloys promising for a great variety of applications ranging from nanoscale light emitters and solar cells to energy production via photoelectrochemical reactions and to nano-spintronics. These alloys have become available in the one-dimensional geometry only most recently, thanks to the advances in the nanowire (NW) growth utilizing molecular beam epitaxy. In this review we will summarize growth approaches currently utilized for the fabrication of such novel dilute nitride-based NWs, discuss their structural, defect-related and optical properties, as well as provide several examples of their potential applications.
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Abstract
The band structure of the dilute-As GaNAs material is explained by the hybridization of localized As-impurity states with the valance band structure of GaN. Our approach employs the use of Density Functional Theory (DFT) calculated band structures, along with experimental results, to determine the localized As-impurity energy level and coupling parameters in the band anti-crossing (BAC) k ∙ p model for N-rich alloys. This model captures the reduction of bandgap with increasing arsenic incorporation and provides a tool for device-level design with the material within the context of the k ∙ p formalism. The analysis extends to calculating the effect of the arsenic impurities on hole (heavy, light and split-off) effective masses and predicting the trend of the bandgap across the entire composition range.
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Chen S, Jansson M, Stehr JE, Huang Y, Ishikawa F, Chen WM, Buyanova IA. Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure. NANO LETTERS 2017; 17:1775-1781. [PMID: 28170267 DOI: 10.1021/acs.nanolett.6b05097] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Nanowire (NW) lasers operating in the near-infrared spectral range are of significant technological importance for applications in telecommunications, sensing, and medical diagnostics. So far, lasing within this spectral range has been achieved using GaAs/AlGaAs, GaAs/GaAsP, and InGaAs/GaAs core/shell NWs. Another promising III-V material, not yet explored in its lasing capacity, is the dilute nitride GaNAs. In this work, we demonstrate, for the first time, optically pumped lasing from the GaNAs shell of a single GaAs/GaNAs core/shell NW. The characteristic "S"-shaped pump power dependence of the lasing intensity, with the concomitant line width narrowing, is observed, which yields a threshold gain, gth, of 3300 cm-1 and a spontaneous emission coupling factor, β, of 0.045. The dominant lasing peak is identified to arise from the HE21b cavity mode, as determined from its pronounced emission polarization along the NW axis combined with theoretical calculations of lasing threshold for guided modes inside the nanowire. Even without intentional passivation of the NW surface, the lasing emission can be sustained up to 150 K. This is facilitated by the improved surface quality due to nitrogen incorporation, which partly suppresses the surface-related nonradiative recombination centers via nitridation. Our work therefore represents the first step toward development of room-temperature infrared NW lasers based on dilute nitrides with extended tunability in the lasing wavelength.
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Affiliation(s)
- Shula Chen
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Mattias Jansson
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Jan E Stehr
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Yuqing Huang
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Fumitaro Ishikawa
- Graduate School of Science and Engineering, Ehime University , Matsuyama 790-8577, Japan
| | - Weimin M Chen
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Irina A Buyanova
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
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Brown CR, Estes NJ, Whiteside VR, Wang B, Hossain K, Golding TD, Leroux M, Al Khalfioui M, Tischler JG, Ellis CT, Glaser ER, Sellers IR. The effect and nature of N–H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs. RSC Adv 2017. [DOI: 10.1039/c7ra02900d] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A study of certain defects in GaInNAs, and their passivation. The passivation process could lead to more efficient photovoltaic devices.
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Affiliation(s)
- C. R. Brown
- Homer L. Dodge Department of Physics & Astronomy
- University of Oklahoma
- Norman
- USA
| | - N. J. Estes
- Homer L. Dodge Department of Physics & Astronomy
- University of Oklahoma
- Norman
- USA
| | - V. R. Whiteside
- Homer L. Dodge Department of Physics & Astronomy
- University of Oklahoma
- Norman
- USA
| | - B. Wang
- School of Chemical, Biological and Materials Engineering
- University of Oklahoma
- Norman
- USA
| | | | | | | | | | | | | | | | - I. R. Sellers
- Homer L. Dodge Department of Physics & Astronomy
- University of Oklahoma
- Norman
- USA
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Di Paola DM, Kesaria M, Makarovsky O, Velichko A, Eaves L, Mori N, Krier A, Patanè A. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Sci Rep 2016; 6:32039. [PMID: 27535896 PMCID: PMC4989182 DOI: 10.1038/srep32039] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2016] [Accepted: 07/26/2016] [Indexed: 11/09/2022] Open
Abstract
Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as "stepping stones" for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.
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Affiliation(s)
- D M Di Paola
- School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK
| | - M Kesaria
- Physics Department, Lancaster University, Lancaster LA1 4YB, UK
| | - O Makarovsky
- School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK
| | - A Velichko
- School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK
| | - L Eaves
- School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK
| | - N Mori
- Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita City, Osaka 565-0871, Japan
| | - A Krier
- Physics Department, Lancaster University, Lancaster LA1 4YB, UK
| | - A Patanè
- School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK
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Tan CK, Borovac D, Sun W, Tansu N. Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter. Sci Rep 2016; 6:22215. [PMID: 26905060 PMCID: PMC4764911 DOI: 10.1038/srep22215] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2015] [Accepted: 02/10/2016] [Indexed: 11/09/2022] Open
Abstract
The band structures of dilute-As AlNAs alloys with As composition ranging from 0% up to 12.5% are studied by using First-Principle Density Functional Theory (DFT) calculation. The energy band gap shows remarkable reduction from 6.19 eV to 3.87 eV with small amount of As content in the AlNAs alloy, which covers the deep ultraviolet (UV) spectral regime. A giant bowing parameter of 30.5 eV ± 0.5 eV for AlNAs alloy is obtained. In addition, our analysis shows that the crossover between crystal field split-off (CH) band and heavy hole (HH) bands occurs in the dilute-As AlNAs alloy with As-content of ~1.5%. This result implies the possibility of dominant transverse electric (TE)-polarized emission by using AlNAs alloy with dilute amount of As-content. Our findings indicate the potential of dilute-As AlNAs alloy as the new active region material for TE-polarized III-Nitride-based deep UV light emitters.
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Affiliation(s)
- Chee-Keong Tan
- Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
| | - Damir Borovac
- Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
| | - Wei Sun
- Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
| | - Nelson Tansu
- Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
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Seifikar M, O'Reilly EP, Fahy S. Self-consistent Green's function method for dilute nitride conduction band structure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2014; 26:365502. [PMID: 25132558 DOI: 10.1088/0953-8984/26/36/365502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We present a self-consistent Green's function (SCGF) approach for the Anderson many-impurity model to calculate the band dispersion and density of states near the conduction band edge in GaN(x)As(1-x) dilute nitride alloys. Two different models of the N states have been studied to investigate the band structure of these materials: (1) the two-band model, which assumes all N states have the same energy, EN; (2) a model which includes a full distribution of N states obtained by allowing for direct interaction between N sites. The density of states, projected onto extended and localised states, calculated by the SCGF two-band model, are in excellent agreement with those previously obtained in supercell calculations and reveal a gap in the density of states just above E(N), in contrast with the results of previous non-self-consistent Green's function calculations. However, including the full distribution of N states in a SCGF calculation removes this gap, in agreement with experiment.
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Affiliation(s)
- Masoud Seifikar
- Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland Department of Physics, University College Cork, Cork, Ireland
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Tan CK, Zhang J, Li XH, Liu G, Tayo BO, Tansu N. First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters. ACTA ACUST UNITED AC 2013. [DOI: 10.1109/jdt.2013.2248342] [Citation(s) in RCA: 98] [Impact Index Per Article: 8.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Vogiatzis N, Rorison JM. Density of states for dilute nitride systems: calculation of lifetime broadening. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2009; 21:255801. [PMID: 21828441 DOI: 10.1088/0953-8984/21/25/255801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We present calculations for the band structure of bulk and confined quantum well and quantum wire GaInNAs structures. To treat this non-randomly alloyed material system we follow previous approaches in using an Anderson impurity model where the nitrogen localized states interact with the GaInAs conduction band states. We solve this model using Matsubara Green's functions and the associated self-energies which produce a complex band structure where both the real and imaginary components depend on the concentration of nitrogen. In particular this approach gives a definite nitrogen dependent lifetime broadening and is different from previous work in that no artificial input parameters are used. The density of states of the conduction band, derived from these functions, is strongly altered by interaction with the nitrogen states. The density of states is required for further optical and transport investigations involving this system.
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Affiliation(s)
- N Vogiatzis
- Centre for Communications Research, Electrical and Electronic Engineering, Merchant Venturers Building, Woodland Road, University of Bristol, Bristol, UK
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Patanè A, Allison G, Eaves L, Hopkinson M, Hill G, Ignatov A. Tailoring the electrical conductivity of GaAs by nitrogen incorporation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2009; 21:174209. [PMID: 21825413 DOI: 10.1088/0953-8984/21/17/174209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We investigate the electrical conductivity of the dilute nitride alloy GaAs(1-x)N(x), focusing on the range of concentrations of N over which this material system behaves as a good conductor. We report a large increase of the resistivity for x>0.2% and a strong reduction of the electron mobility, μ, at x∼0.1%. In the ultra-dilute regime (x∼0.1%) and at low electric fields (<1 kV cm(-1)), the electrical conductivity retains the characteristic features of electron transport through extended states, albeit with relatively low mobility (μ∼0.1 m(2) V(-1) s(-1) at T = 293 K) due to scattering of electrons by N atoms. In contrast, at large electric fields (>1 kV cm(-1)), the conduction electrons gain sufficient energy to approach the energy of the resonant N level, where they become spatially localized. This resonant electron localization in an electric field (RELIEF) leads to negative differential velocity. The RELIEF effect could be observed in other III-N-V compounds, such as InAs(1-x)N(x) and InP(1-x)N(x), and has potential for applications in terahertz electronics.
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Affiliation(s)
- A Patanè
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
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14
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Hantke K, Horst S, Chatterjee S, Klar PJ, Volz K, Stolz W, Rühle WW, Masia F, Pettinari G, Polimeni A, Capizzi M. Zero-phonon lines of nitrogen-cluster states in GaN x As 1-x : H identified by time-resolved photoluminescence. JOURNAL OF MATERIALS SCIENCE 2008; 43:4344-4347. [PMID: 34341608 PMCID: PMC8319878 DOI: 10.1007/s10853-008-2643-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/08/2008] [Accepted: 04/09/2008] [Indexed: 06/13/2023]
Affiliation(s)
- K. Hantke
- Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
- Present Address: Max-Planck-Institute for Dynamics and Self-Organization, Bunsenstraße 10, 37073 Gottingen, Germany
| | - S. Horst
- Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
| | - S. Chatterjee
- Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
| | - P. J. Klar
- Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
- Present Address: Institute of Experimental Physics I, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
| | - K. Volz
- Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
| | - W. Stolz
- Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
| | - W. W. Rühle
- Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
| | - F. Masia
- CNISM and Dipartimento di Fisica, Sapienza Universitá di Roma, Piazzale A. Moro 2, 00185 Rome, Italy
| | - G. Pettinari
- CNISM and Dipartimento di Fisica, Sapienza Universitá di Roma, Piazzale A. Moro 2, 00185 Rome, Italy
| | - A. Polimeni
- CNISM and Dipartimento di Fisica, Sapienza Universitá di Roma, Piazzale A. Moro 2, 00185 Rome, Italy
| | - M. Capizzi
- CNISM and Dipartimento di Fisica, Sapienza Universitá di Roma, Piazzale A. Moro 2, 00185 Rome, Italy
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15
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Pettinari G, Polimeni A, Masia F, Trotta R, Felici M, Capizzi M, Niebling T, Stolz W, Klar PJ. Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure. PHYSICAL REVIEW LETTERS 2007; 98:146402. [PMID: 17501294 DOI: 10.1103/physrevlett.98.146402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2006] [Indexed: 05/15/2023]
Abstract
The dependence of the electron mass on hydrostatic pressure P in N-diluted GaAs1-xNx (x=0.10% and 0.21%) is investigated by magnetophotoluminescence. Exceedingly large fluctuations (up to 60%/kbar) in the electron mass with increasing P are found. These originate from a pressure-driven tuning of the hybridization degree between the conduction band minimum and specific nitrogen-related states. Present results suggest a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host.
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Affiliation(s)
- G Pettinari
- CNISM and Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma, Italy
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16
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Allison G, Mori N, Patanè A, Endicott J, Eaves L, Maude DK, Hopkinson M. Strong effect of resonant impurities on Landau-level quantization. PHYSICAL REVIEW LETTERS 2006; 96:236802. [PMID: 16803389 DOI: 10.1103/physrevlett.96.236802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2006] [Indexed: 05/10/2023]
Abstract
We investigate experimentally the effect of a random distribution of nitrogen (N) impurities on the Landau-level spectrum of a GaAs quantum well. Our magnetotunneling study reveals complex and nonequally spaced Landau levels and a quenching of the Landau states at a well-defined bias and electron energy which is resonant with that of the N atoms. Analysis of the magnetic field dependence of the tunnel current into the Landau levels of the well also provides quantitative information about the nonresonant component of the N-related scattering potential.
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Affiliation(s)
- G Allison
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
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17
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Tomić S, Sunderland AG, Bush IJ. Parallel multi-bandk·pcode for electronic structure of zinc blend semiconductor quantum dots. ACTA ACUST UNITED AC 2006. [DOI: 10.1039/b600701p] [Citation(s) in RCA: 68] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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