Utsumi Y, Golubev DS, Schön G. Full counting statistics for a single-electron transistor: nonequilibrium effects at intermediate conductance.
PHYSICAL REVIEW LETTERS 2006;
96:086803. [PMID:
16606212 DOI:
10.1103/physrevlett.96.086803]
[Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2005] [Indexed: 05/08/2023]
Abstract
We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.
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