Role of disorder in Mn:GaAs, Cr:GaAs, and Cr:GaN

Modulating the magnetic properties of MoS2 monolayers by group VIII doping and vacancy engineering

In this work, density functional theory is adopted to study the electronic and magnetic properties of MoS₂ monolayers combined with a single S vacancy defect and a group VIII (G8) atom dopant, in which the dopant is incorporated via Mo substitution. The calculated results show that the magnetic properties of monolayer MoS₂ can be tuned by changing the distribution of the G8 atom and S vacancy. The S vacancy tends to decrease the net magnetic moment of the doped system when these two defects are in their closest configuration. By adjusting the distance between the dopant and the S vacancy, the doped MoS₂ monolayer may show a variable net magnetic moment. In particular, all of the Ni-doped MoS₂ monolayers show zero magnetic moment with or without an S vacancy. The mean-field approximation is used to estimate the Curie temperature (T_C). Our results show that Fe, Co, Ru, Rh, Os and Ir-doped MoS₂ monolayers are potential candidates for ferromagnetism above room temperature. The density of states calculations provide further explanations as to the magnetic behavior of these doped systems. These results provide a new route for the potential application of atomically thin dilute magnetic semiconductors in spintronic devices by employing monolayer MoS₂.

In this work, the density functional theory study shows that the magnetic properties of MoS₂ monolayer can be tuned by the distribution of group VIII atom and S vacancy, in which the dopant is incorporated via Mo subsitution.

Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors.

Exposure of the hidden anti-ferromagnetism in paramagnetic CdSe:Mn nanocrystals

We present theoretical and experimental investigations of the magnetism of paramagnetic semiconductor CdSe:Mn nanocrystals and propose an efficient approach to the exposure and analysis of the underlying anti-ferromagnetic interactions between magnetic ions therein. A key advance made here is the development of an analysis method with the exploitation of group theory technique that allows us to distinguish the anti-ferromagnetic interactions between aggregative Mn(2+) ions from the overall pronounced paramagnetism of magnetic-ion-doped semiconductor nanocrystals. By using the method, we clearly reveal and identify the signatures of anti-ferromagnetism from the measured temperature-dependent magnetisms and furthermore determine the average number of Mn(2+) ions and the fraction of aggregative ones in the measured CdSe:Mn nanocrystals.

Large-scale Monte Carlo study of a realistic lattice model for Ga(1-x)MnxAs

Mn-doped GaAs is studied with a real-space Hamiltonian on an fcc lattice that reproduces the valence bands of undoped GaAs. Large-scale Monte Carlo (MC) simulations on a Cray XT3, using up to a thousand nodes, were needed. Spin-orbit interaction and the random distribution of the Mn ions are considered. The hopping amplitudes are functions of the GaAs Luttinger parameters. At the realistic coupling J approximately 1.2 eV the MC Curie temperature and magnetization curves agree with experiments for x = 8.5% annealed samples. Mn-doped GaSb and GaP are also briefly discussed.

Design rules to achieve high-T(C) ferromagnetism in (Ga, Mn)As alloys

The Curie temperature T(C) of ferromagnetic semiconductor alloys depends not only on the alloy composition, but also on the spatial configuration of the magnetic impurities. Here we use a set of first-principle-calculated Curie temperatures to uncover-via a statistical, 'data mining' approach-the rules that govern the dependence of T(C) on the configuration of Mn substitutional impurities in GaAs. We find that T(C) is lowered (raised) when the average number of first (third and fourth) nearest-neighbour Mn pairs increases, suggesting simple atom-by-atom strategies to achieve high T(C) in (Ga, Mn)As alloys.

First-principles combinatorial design of transition temperatures in multicomponent systems: the case of Mn in GaAs

The transition temperature TC of multicomponent systems--ferromagnetic, superconducting, or ferroelectric--depends strongly on the atomic arrangement, but an exhaustive search of all configurations for those that optimize TC is difficult, due to the astronomically large number of possibilities. Here we address this problem by parametrizing the TC of a set of approximately 50 input configurations, calculated from first principles, in terms of configuration variables ("cluster expansion"). Once established, this expansion allows us to search almost effortlessly the transition temperature of arbitrary configurations. We apply this approach to search for the configuration of Mn dopants in GaAs having the highest ferromagnetic Curie temperature. Our general approach of cluster expanding physical properties opens the way to design based on exploring a large space of configurations.

Clustering of impurity atoms in Co-doped anatase TiO(2) thin films probed with soft x-ray fluorescence

The electronic structure of Co-doped anatase TiO(2) epitaxial thin films grown at different partial oxygen pressures is investigated using soft x-ray emission spectroscopy. The resonantly excited Co L(2,3) x-ray emission spectra of ferromagnetic Ti(0.96)Co(0.04)O(2) samples for the oxygen-deficient regime show that the ratio of integral intensities for Co L(2) and L(3) emission lines significantly decreases with respect to nonmagnetic samples in the oxygen-rich regime. This is due to L(2)L(3)M(4,5) Coster-Kronig transitions and suggests that ferromagnetic Ti(0.96)Co(0.04)O(2) samples have n-type charge carriers and Co-Co bonds between substitutional and interstitial Co atoms are present while Co-O bonds are dominant in nonmagnetic Ti(0.96)Co(0.04)O(2) samples in the oxygen-rich regime. Electronic structure calculations show that the presence of free charge carriers and Co segregation play a crucial role in strong ferromagnetism at room temperature in Co-doped TiO(2).

Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN

Results of extensive density-functional studies provide direct evidence that Cr atoms in Cr:GaN have a strong tendency to form embedded clusters, occupying Ga sites. Significantly, for larger than 2-Cr-atom clusters, states containing antiferromagnetic coupling with net spin in the range 0.06-1.47 muB/Cr are favored. We propose a picture where various configurations coexist and the statistical distribution and associated magnetism will depend sensitively on the growth details. Such a view may elucidate many puzzling observations related to the structural and magnetic properties of III-N and other dilute semiconductors.