Hydrogen-induced surface metallization of beta-SiC(100)-(3x2) revisited by density functional theory calculations

Structure and energetics changes during hydrogenation of 4H-SiC{0001} surfaces: a DFT study

The changes in the atomic and electronic structure of Si- and C-terminated hexagonal SiC{0001} surfaces resulting from on-surface and subsurface hydrogen adsorption have been studied within the density functional theory framework. Hydrogen coverages ranging from a submonolayer to one monolayer were considered. Our results show that a monolayer of adsorbed H almost completely suppresses the relaxation of the SiC surface atomic layers. On both terminations H binds strongly to the surface and the binding is about 2 eV stronger in on-surface sites than subsurface. Hydrogen binding to the C-terminated surface varies very little with coverage and is distinctly stronger than to the Si-terminated surface.

Role of hydrogen adsorption on the carbon terminated β-SiC(100)-c(2 × 2) surface structure: a theoretical approach

The role of hydrogen adsorption on different clean surface models for the carbon terminated β-SiC(100)-c(2 × 2) surface structure is investigated through the use of ab initio calculations. The structural and electronic effect of hydrogen atoms bonded to carbon and/or silicon dimers is specifically considered and compared with the results for a clean surface model. The presence of adsorbed hydrogen atoms affects the atomic equilibrium positions, as well as electronic properties, of the atoms of the clean structure. These last properties are altered in different directions if the adsorption occurs in one or the other of the two investigated models. The changes in both structural and electronic properties were evaluated and compared with those of the clean surface. From our obtained results, a possible metallization, as a result of hydrogen adsorption, is theoretically postulated to occur in a similar way to what occurs with the silicon terminated β-SiC(100)(3 × 2) surface.

Hydrogen induced metallicity on the ZnO(1010) surface

Exposure of the mixed-terminated surface to atomic hydrogen at room temperature is found to lead to drastic changes of the electrical properties. The insulator surface is found to become metallic. By employing several experimental techniques (electron energy loss spectroscopy, He-atom scattering, and scanning tunneling microscopy) together with ab initio electronic structure calculations we demonstrate that a low-temperature (1 x 1) phase with two H atoms in the unit cell transforms upon heating to another (1 x 1) phase with only one H atom per unit cell. The odd number of electrons added to the surface per unit cell gives rise to partially filled surface states and thus a metallization of the surface.

Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond

We perform first-principles calculations to explore the physical origin of hydrogen-induced semiconductor surface metallization observed in beta-SiC(001)-3 x 2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridge bonds (i.e., Si-H-Si complex). The hydrogen strengthens the weak Si-Si dimers in the subsurface by forming hydrogen bridge bonds, and donates electron to the surface conduction band.