Multiple time scales in diffraction measurements of diffusive surface relaxation

Growth of vertically aligned nanowires in metal-oxide nanocomposites: kinetic Monte-Carlo modeling versus experiments

We employ kinetic Monte-Carlo simulations to study the growth process of metal-oxide nanocomposites obtained via sequential pulsed laser deposition. Using Ni-SrTiO3 (Ni-STO) as a model system, we reduce the complexity of the computational problem by choosing a coarse-grained approach mapping Sr, Ti and O atoms onto a single effective STO pseudo-atom species. With this ansatz, we scrutinize the kinetics of the sequential synthesis process, governed by alternating deposition and relaxation steps, and analyze the self-organization propensity of Ni atoms into straight vertically aligned nanowires embedded in the surrounding STO matrix. We finally compare the predictions of our binary toy model with experiments and demonstrate that our computational approach captures fundamental aspects of self-assembled nanowire synthesis. Despite its simplicity, our modeling strategy successfully describes the impact of relevant parameters like the concentration or laser frequency on the final nanoarchitecture of metal-oxide thin films grown via pulsed laser deposition.

The Ehrlich-Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach

The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich-Schwoebel (ES) barrier. Here, through an in situ scanning tunneling microscopy study of mixed-terminated La5/8Ca3/8MnO3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ∼0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. These studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides.

The power of in situ pulsed laser deposition synchrotron characterization for the detection of domain formation during growth of Ba0.5Sr0.5TiO3 on MgO

A highly sophisticated pulsed laser deposition (PLD) chamber has recently been installed at the NANO beamline at the synchrotron facility ANKA (Karlsruhe, Germany), which allows for comprehensive studies on the PLD growth process of dielectric, ferroelectric and ferromagnetic thin films in epitaxial oxide heterostructures or even multilayer systems by combining in situ reflective high-energy diffraction with the in situ synchrotron high-resolution X-ray diffraction and surface diffraction methods. The modularity of the in situ PLD chamber offers the opportunity to explore the microstructure of the grown thin films as a function of the substrate temperature, gas pressure, laser fluence and target-substrate separation distance. Ba0.5Sr0.5TiO3 grown on MgO represents the first system that is grown in this in situ PLD chamber and studied by in situ X-ray reflectivity, in situ two-dimensional reciprocal space mapping of symmetric X-ray diffraction and acquisition of time-resolved diffraction profiles during the ablation process. In situ PLD synchrotron investigation has revealed the occurrence of structural distortion as well as domain formation and misfit dislocation which all depend strongly on the film thickness. The microstructure transformation has been accurately detected with a time resolution of 1 s. The acquisition of two-dimensional reciprocal space maps during the PLD growth has the advantage of simultaneously monitoring the changes of the crystalline structure as well as the formation of defects. The stability of the morphology during the PLD growth is demonstrated to be remarkably affected by the film thickness. A critical thickness for the domain formation in Ba0.5Sr0.5TiO3 grown on MgO could be determined from the acquisition of time-resolved diffraction profiles during the PLD growth. A splitting of the diffraction peak into two distinguishable peaks has revealed a morphology change due to modification of the internal strain during growth.

In operando GISAXS studies of mound coarsening in electrochemical homoepitaxy

Kinetic roughening during electrodeposition was studied by grazing incidence small angle x-ray scattering for the case of Au(001) homoepitaxial growth in Cl- containing electrolytes. The formation and coarsening of an isotropic mound distribution on unreconstructed Au(001) and of [110]-oriented anisotropic mounds on the "hex" reconstructed surface was observed. The lateral mound coarsening is described by a well-defined scaling law. On unreconstructed Au a transition in the coarsening exponent from ≈1/4 to ≈1/3 with increasing potential is found, which can be explained by the pronounced potential dependence of surface transport processes in an electrochemical environment.

Controlling the growth mode of para-sexiphenyl (6P) on ZnO by partial fluorination

Partial fluorination of para-sexiphenyl significantly alters the growth process on ZnO(101̄0) avoiding the phase coexistence of unsubstituted para-sexiphenyl and leading to smooth layer-by-layer growth.

Measurements of surface diffusivity and coarsening during pulsed laser deposition

Pulsed laser deposition (PLD) of homoepitaxial SrTiO(3) 001 was studied with in situ x-ray specular reflectivity and surface diffuse x-ray scattering. Unlike prior reflectivity-based studies, these measurements access both time and length scales of the evolution of the surface morphology during growth. In particular, we show that this technique allows direct measurements of the diffusivity for both inter- and intralayer transport. Our results explicitly limit the possible role of island breakup, demonstrate the key roles played by nucleation and coarsening in PLD, and place an upper bound on the Ehrlich-Schwoebel barrier for downhill interlayer diffusion.

In situ x-ray reflectivity studies of dynamics and morphology during heteroepitaxial complex oxide thin film growth

We present a method, based on refraction effects in continuous, stratified media, for quantitative analysis of specular x-ray reflectivity from interfaces with atomic-scale roughness. Roughness at interfaces has previously been incorporated into this framework via Fourier transform of a continuous height distribution, but this approach breaks down when roughness approaches the atomic scale and manifests discrete character. By modeling the overall roughness at interfaces as a convolution of discrete and continuous height distributions, we have extended the applicability of this reflectivity model to atomic-scale roughness. The parameterization of thickness and roughness enables quantitative analysis of time-resolved in situ reflectivity studies of thin film growth, modeling step-flow, layer-by-layer and three-dimensional growth within a single framework. We present the application of this model to the analysis of anti-Bragg growth oscillations measured in situ during heteroepitaxial growth of La(0.7)Sr(0.3)MnO(3) on [Formula: see text] SrTiO(3) at different temperatures and pressures, and discuss the evolution of surface morphology.

Initial structure and growth dynamics of YBa(2)Cu(3)O(7-delta) during pulsed laser deposition

The initial heteroepitaxial growth of YBa{2}Cu{3}O{7-delta} films on SrTiO3(001) substrates during pulsed laser deposition shows a growth-mode transition and a change of growth unit. The growth starts with two blocks, each two-thirds the size of the complete unit cell. The first of these blocks grows in a step-flow fashion, whereas the second grows in the layer-by-layer mode. Subsequent deposition occurs layer-by-layer of complete unit cells. These results suggest that the surface diffusion in the heteroepitaxial case is strongly influenced by the competition with formation energies, which is important for the fabrication of heteroepitaxial devices on the unit cell scale.

Nonequilibrium interlayer transport in pulsed laser deposition

We use time-resolved surface x-ray diffraction measurements with microsecond range resolution to study the growth kinetics of pulsed laser deposited . Time-dependent surface coverages corresponding to single laser shots were determined directly from crystal truncation rod intensity transients. Analysis of surface coverage evolution shows that extremely fast nonequilibrium interlayer transport, which occurs concurrently with the arrival of the laser plume, dominates the deposition process. A much smaller fraction of material, which is governed by the dwell time between successive laser shots, is transferred by slow, thermally driven interlayer transport processes.