Temperature-driven change in the unstable growth mode on patterned GaAs(001)

Effects of a kinetic barrier on limited-mobility interface growth models

The role played by a kinetic barrier originated by out-of-plane step edge diffusion, introduced by Leal et al. [J. Phys.: Condens. Matter 23, 292201 (2011)JCOMEL0953-898410.1088/0953-8984/23/29/292201], is investigated in the Wolf-Villain and Das Sarma-Tamborenea models with short-range diffusion. Using large-scale simulations, we observe that this barrier is sufficient to produce growth instability, forming quasiregular mounds in one and two dimensions. The characteristic surface length saturates quickly indicating a uncorrelated growth of the three-dimensional structures, which is also confirmed by a growth exponent β=1/2. The out-of-plane particle current shows a large reduction of the downward flux in the presence of the kinetic barrier enhancing, consequently, the net upward diffusion and the formation of three-dimensional self-assembled structures.

Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth

We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced.

Domain competition during ballistic deposition: effect of surface diffusion and surface patterning

We investigate domain competition occurring during aggregate growth under ballistic deposition on a one-dimensional substrate by kinetic Monte Carlo simulations. In order to capture adsorbate molecules being deposited vertically, domains grow tall by extending their branches laterally and suppress the growth of neighboring short domains. When molecules are deposited on a flat substrate and frozen at the deposition site, the population density of domains, ρ, decreases by a power law as ρ ∼ h(-2/3) at height h. In contrast, if the effect of surface diffusion is taken into account, the domain density decreases rapidly as ρ ∼ 1/h. On a substrate patterned with an array of nanopillars, domains growing from pillar tops tend to envelop those growing from gaps between pillars. To completely suppress the growth of domains in gaps, pillar periodicity λ should be smaller than a critical value λ(c). We estimate this value approximately using the slope angle and the aspect ratio of a single isolated domain.

Modelling of epitaxial film growth with an Ehrlich-Schwoebel barrier dependent on the step height

The formation of mounded surfaces in epitaxial growth is attributed to the presence of barriers against interlayer diffusion in the terrace edges, known as Ehrlich-Schwoebel (ES) barriers. We investigate a model for epitaxial growth using an ES barrier explicitly dependent on the step height. Our model has an intrinsic topological step barrier even in the absence of an explicit ES barrier. We show that mounded morphologies can be obtained even for a small barrier while a self-affine growth, consistent with the Villain-Lai-Das Sarma equation, is observed in the absence of an explicit step barrier. The mounded surfaces are described by a super-roughness dynamical scaling characterized by locally smooth (facetted) surfaces and a global roughness exponent α > 1. The thin film limit is featured by surfaces with self-assembled three-dimensional structures having an aspect ratio (height/width) that may increase or decrease with temperature depending on the strength of the step barrier.

Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100)

We combine nanoimprint lithography and molecular beam epitaxy for the site-controlled growth of InAs quantum dot chains on GaAs(100) substrates. We study the influence of quantum dot growth temperature and regrowth buffer thickness on the formation of the quantum dot chains. In particular, we show that by carefully tuning the growth conditions we can achieve equal quantum dot densities and photoluminescence ground state peak wavelengths for quantum dot chains grown on patterns oriented along the [011], [01 ̄1], [011] and [001] directions. Furthermore, we identify the crystal facets that form the sidewalls of the grooves in the differently oriented patterns after capping and show that the existence of (411)A sidewalls causes reduction of the QD density as well as sidewall roughening.

Transient regimes and crossover for epitaxial surfaces

We apply a formalism for deriving stochastic continuum equations associated with lattice models to obtain equations governing the transient regimes of epitaxial growth for various experimental scenarios and growth conditions. The first step of our methodology is the systematic transformation of the lattice model into a regularized stochastic equation of motion that provides initial conditions for differential renormalization-group (RG) equations for the coefficients in the regularized equation. The solutions of the RG equations then yield trajectories that describe the original model from the transient regimes, which are of primary experimental interest, to the eventual crossover to the asymptotically stable fixed point. We first consider regimes defined by the relative magnitude of deposition noise and diffusion noise. If the diffusion noise dominates, then the early stages of growth are described by the Mullins-Herring (MH) equation with conservative noise. This is the classic regime of molecular-beam epitaxy. If the diffusion and deposition noise are of comparable magnitude, the transient equation is the MH equation with nonconservative noise. This behavior has been observed in a recent report on the growth of aluminum on silicone oil surfaces [Z.-N. Fang, Thin Solid Films 517, 3408 (2009)]. Finally, the regime where deposition noise dominates over diffusion noise has been observed in computer simulations, but does not appear to have any direct experimental relevance. For initial conditions that consist of a flat surface, the Villain-Lai-Das Sarma (VLDS) equation with nonconservative noise is not appropriate for any transient regime. If, however, the initial surface is corrugated, the relative magnitudes of terms can be altered to the point where the VLDS equation with conservative noise does indeed describe transient growth. This is consistent with the experimental analysis of growth on patterned surfaces [H.-C. Kan, Phys. Rev. Lett. 92, 146101 (2004); T. Tadayyon-Eslami, Phys. Rev. Lett. 97, 126101 (2006)].

Renormalization of stochastic lattice models: epitaxial surfaces

We present the application of a method [C. A. Haselwandter and D. D. Vvedensky, Phys. Rev. E 76, 041115 (2007)] for deriving stochastic partial differential equations from atomistic processes to the morphological evolution of epitaxial surfaces driven by the deposition of new material. Although formally identical to the one-dimensional (1D) systems considered previously, our methodology presents substantial additional technical issues when applied to two-dimensional (2D) surfaces. Once these are addressed, subsequent coarse-graining is accomplished as before by calculating renormalization-group (RG) trajectories from initial conditions determined by the regularized atomistic models. Our applications are to the Edwards-Wilkinson (EW) model [S. F. Edwards and D. R. Wilkinson, Proc. R. Soc. London, Ser. A 381, 17 (1982)], the Wolf-Villain (WV) model [D. E. Wolf and J. Villain, Europhys. Lett. 13, 389 (1990)], and a model with concurrent random deposition and surface diffusion. With our rules for the EW model no appreciable crossover is obtained for either 1D or 2D substrates. For the 1D WV model, discussed previously, our analysis reproduces the crossover sequence known from kinetic Monte Carlo (KMC) simulations, but for the 2D WV model, we find a transition from smooth to unstable growth under repeated coarse-graining. Concurrent surface diffusion does not change this behavior, but can lead to extended transient regimes with kinetic roughening. This provides an explanation of recent experiments on Ge(001) with the intriguing conclusion that the same relaxation mechanism responsible for ordered structures during the early stages of growth also produces an instability at longer times that leads to epitaxial breakdown. The RG trajectories calculated for concurrent random deposition and surface diffusion reproduce the crossover sequences observed with KMC simulations for all values of the model parameters, and asymptotically always approach the fixed point corresponding to the equation proposed by Villain [J. Phys. I 1, 19 (1991)] and by Lai and Das Sarma [Phys. Rev. Lett. 66, 2899 (1991)]. We conclude with a discussion of the application of our methodology to other growth settings.

Renormalization of stochastic lattice models: basic formulation

We describe a general method for the multiscale analysis of stochastic lattice models. Beginning with a lattice Langevin formulation of site fluctuations, we derive stochastic partial differential equations by regularizing the transition rules of the model. Subsequent coarse graining is accomplished by calculating renormalization-group (RG) trajectories from initial conditions determined by the regularized atomistic models. The RG trajectories correspond to hierarchies of continuum equations describing lattice models over expanding length and time scales. These continuum equations retain a quantitative connection over different scales, as well as to the underlying atomistic dynamics. This provides a systematic method for the derivation of continuum equations from the transition rules of lattice models for any length and time scales. As an illustration we consider the one-dimensional (1D) Wolf-Villain (WV) model [Europhys. Lett. 13, 389 (1990)]. The RG analysis of this model, which we develop in detail, is generic and can be applied to a wide range of conservative lattice models. The RG trajectory of the 1D WV model shows a complex crossover sequence of linear and nonlinear stochastic differential equations, which is in excellent agreement with kinetic Monte Carlo simulations of this model. We conclude by discussing possible applications of the multiscale method described here to other nonequilibrium systems.

Multiscale theory of fluctuating interfaces: renormalization of atomistic models

We describe a framework for the multiscale analysis of atomistic surface processes which we apply to a model of homoepitaxial growth with deposition according to the Wolf-Villain model and concurrent surface diffusion. Coarse graining is accomplished by calculating renormalization-group (RG) trajectories from initial conditions determined by the regularized atomistic theory. All of the crossover and asymptotic scaling regimes known from computer simulations are obtained, but we also find that two-dimensional substrates show an intriguing transition from smooth to mounded morphologies along the RG trajectory.