Current-induced polarization and the spin Hall effect at room temperature

Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque

A scalable platform to synthesize ultrathin heavy metals may enable high-efficiency charge-to-spin conversion for next-generation spintronics. Here, we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal that CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5× increase in the effective field ratio compared to control samples.

Theory of spin and orbital Edelstein effects

In systems with broken spatial inversion symmetry, such as surfaces, interfaces, or bulk systems lacking an inversion center, the application of a charge current can generate finite spin and orbital densities associated with a nonequilibrium magnetization, which is known as spin and orbital Edelstein effect (SEE and OEE), respectively. Early reports on this current-induced magnetization focus on two-dimensional Rashba systems, in which an in-plane nonequilibrium spin density is generated perpendicular to the applied charge current. However, until today, a large variety of materials have been theoretically predicted and experimentally demonstrated to exhibit a sizeable Edelstein effect, which comprises contributions from the spin as well as the orbital degrees of freedom, and whose associated magnetization may be out of plane, nonorthogonal, and even parallel to the applied charge current, depending on the system's particular symmetries. In this review, we give an overview on the most commonly used theoretical approaches for the discussion and prediction of the SEE and OEE. Further, we introduce a selection of the most intensely discussed materials exhibiting a finite Edelstein effect, and give a brief summary of common experimental techniques.

Phonon Chirality Manipulation Mechanism in Transition-Metal Dichalcogenide Interlayer-Sliding Ferroelectrics

As an ideal platform, both the theoretical prediction and first experimental verification of chiral phonons are based on transition-metal dichalcogenide materials. The manipulation of phonon chirality in these materials will have a profound effect on the study of chiral phonons. In this work, we utilize the sliding ferroelectric effect to realize the phonon chirality manipulation mechanism in transition-metal dichalcogenide materials. Based on first-principles calculations, we find the different manipulation effects of interlayer sliding on the phonon chirality and Berry curvature in bilayer and four-layer MoS2 sliding ferroelectrics. These further affect the phonon angular momentum and magnetization under a temperature gradient and the phonon Hall effect under a magnetic field. Our work connects two emerging fields and opens up a new route to manipulating phonon chirality in transition-metal dichalcogenide materials through the sliding ferroelectric mechanism.

Time-Reversal-Even Nonlinear Current Induced Spin Polarization

We propose a time-reversal-even spin generation in second order of electric fields, which dominates the current induced spin polarization in a wide class of centrosymmetric nonmagnetic materials, and leads to a novel nonlinear spin-orbit torque in magnets. We reveal a quantum origin of this effect from the momentum space dipole of the anomalous spin polarizability. First-principles calculations predict sizable spin generations in several nonmagnetic hcp metals, in monolayer TiTe_{2}, and in ferromagnetic monolayer MnSe_{2}, which can be detected in experiment. Our work opens up the broad vista of nonlinear spintronics in both nonmagnetic and magnetic systems.

Influence of Rashba spin-orbit coupling on Josephson effect in triplet superconductor/two-dimensional semiconductor/triplet superconductor junctions

We study theoretically Josephson effect in a planar ballistic junction between two triplet superconductors with p-wave orbital symmetries and separated by a two-dimensional (2D) semiconductor channel with strong Rashba spin–orbit coupling. In triplet superconductors, three types of orbital symmetries are considered. We use Bogoliubov–de Gennes formalism to describe quasiparticle propagations through the junction and the supercurrents are calculated in terms of Andreev reflection coefficients. The features of the variation of the supercurrents with the change of the strength of Rashba spin–orbit coupling are investigated in some detail. It is found that for the three types of orbital symmetries considered, both the magnitudes of supercurrent and the current-phase relations can be manipulated effectively by tuning the strength of Rashba spin–orbit coupling. The interplay of Rashba spin–orbit coupling and Zeeman magnetic field on supercurrent is also investigated in some detail.

Current-Induced Spin Photocurrent in GaAs at Room Temperature

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

Anomalous circular photogalvanic effect in p-GaAs

The anomalous circular photogalvanic effect (ACPGE) is observed in p-GaAs with a thickness of 2 μm at room temperature, in which circularly polarized light is used to inject spin-polarized carriers and the spin diffusion can generate a macroscopic detectable charge current due to the inverse spin Hall effect. The normalized ACPGE signals show first increasing and then decreasing with increasing the doping concentration. The role of the doping impurities is discussed by both extrinsic and intrinsic models, and both can well explain the variation of ACPGE with the doping concentration.

Interface-Induced Anomalous Hall Conductivity in a Confined Metal

The mature silicon technological platform is actively explored for spintronic applications. Metal silicides are an integral part of the Si technology used as interconnects, gate electrodes, and diffusion barriers; their epitaxial integration with Si results in premier contacts. Recent studies highlight the exceptional role of electronic discontinuities at interfaces in the spin-dependent transport properties. Here, we report a new type of Hall conductivity driven by sharp interfaces of Eu silicide, an antiferromagnetic metal, sandwiched between two insulators - Si and SiO _x. Quasi-ballistic transport probes spin-orbit coupling at the interfaces, in particular, charge-spin interconversion. Transverse magnetic field results in anomalous Hall effect signals of an unusual line shape. The interplay between opposite-sign signals from the two interfaces allows efficient control over the magnitude and sign of the overall effect. Selective engineering of interfaces singles out a particular spin signal. The two-channel nature of the effect and its high tunability offer new functional possibilities for future spintronic devices.

Observation of Extrinsic Photo-Induced Inverse Spin Hall Effect in a GaAs/AlGaAs Two-Dimensional Electron Gas

The inverse spin Hall effect induced by circularly polarized light has been observed in a GaAs/AlGaAs two-dimensional electron gas. The spin transverse force has been determined by fitting the photo-induced inverse spin Hall effect (PISHE) current to a theoretical model. The PISHE current is also measured at different light power and different light spot profiles, and all the measurement results are in good agreement with the theoretical calculations. We also measure the PISHE current at different temperatures (i.e., from 77 to 300 K). The temperature dependence of the PISHE current indicates that the extrinsic mechanism plays a dominant role, which is further confirmed by the weak dependence of the PISHE current on the crystal orientation of the sample.

Spin Hall photoconductance in a three-dimensional topological insulator at room temperature

Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparatively little is known about the interaction of the spins with external stimuli like polarized light. We observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi₂Te₂Se platelets for perpendicular incidence of light. The same edges exhibit also a finite bias-dependent Kerr angle, indicative of spin accumulation induced by a transversal spin Hall effect in the bulk states of the Bi₂Te₂Se platelets. A symmetry analysis shows that the helical photoconductance is distinct to common longitudinal photoconductance and photocurrent phenomena, but consistent with optically injected spins being transported in the side facets of the platelets.

While the spin generation in topological insulators is well studied, little is known about the interaction of the spins with external stimuli. Here, Seifert et al. observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi₂Te₂Se platelets for perpendicular incidence of light, distinct to common longitudinal photoconductance phenomena.

Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3

The three-dimensional (3D) topological insulator (TI) Bi₂Se₃ exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from the coexisting two-dimensional electron gas (2DEG) on the surface. Here, we use circularly polarized light to induce the inverse spin Hall effect in a Bi₂Se₃ thin film at different temperatures (i.e., from 77 to 300 K). It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs. The temperature and power dependence of the PISHE also confirms our method. Furthermore, it is found that the PISHE in the 2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISHE.

Observation of current-induced bulk magnetization in elemental tellurium

The magnetoelectric effect in bulk matter is of growing interest both fundamentally and technologically. Since the beginning of the century, the magnetoelectric effect has been studied intensively in multiferroic materials. However, magnetoelectric phenomena in materials without any (anti-)ferroic order remain almost unexplored. Here we show the observation of a new class of bulk magnetoelectric effect, by revisiting elemental trigonal tellurium. We demonstrate that elemental tellurium, which is a nonmagnetic semiconductor, exhibits current-induced magnetization. This effect is attributed to spin splitting of the bulk band owing to the lack of inversion symmetry in trigonal tellurium. This finding highlights magnetoelectricity in bulk matter driven by moving electrons without any (anti-)ferroic order. Notably, current-induced magnetization generates a magnetic field that is not circular around but is parallel to the applied current; thus, this phenomenon opens a new area of magnetic field generation beyond Ampere’s law that may lead to industrial applications.

Electrical control of magnetic response in bulk material without electric or magnetic order is rare and potentially attractive for high efficient spintronics. Here, the authors report magnetization in elemental tellurium driven purely by current without any (anti-)ferroic order.

The influence of anisotropic Rashba spin-orbit coupling on current-induced spin polarization in graphene

We consider a disordered graphene layer with anisotropic Rashba spin-orbit coupling subjected to a longitudinal electric field. Using the linear response theory we calculate current-induced spin polarization including in-plane normal and parallel components with respect to the electric field direction. Unlike the case of isotropic Rashba spin-orbit where the normal component of spin polarization is linear in terms of Fermi energy around the Dirac point, anisotropic Rashba spin-orbit can result in non-linear dependence of this component at such energies within the Lifshitz points. Furthermore, we show that anisotropic Rashba interaction allows for tuning the direction of spin polarization from perpendicular direction to the parallel one such that for certain values of Rashba parameters the magnitudes of both components can also be quenched. The effect of carriers scattering on randomly distributed non-magnetic disorders is also taken into account by calculating vertex correction. This results in modification of spin polarization components depending on the relative strength of Rashba parameters.

Spin-Hall Voltage over a Large Length Scale in Bulk Germanium

We exploit the spin-Hall effect to generate a uniform pure spin current in an epitaxial n-doped Ge channel, and we detect the electrically induced spin accumulation, transverse to the injected charge current density, with polar magneto-optical Kerr microscopy at a low temperature. We show that a large spin density up to 400  μm^{-3} can be achieved at the edges of the 100-μm-wide Ge channel for an applied electric field lower than 5  mV/μm. We find that the spin density linearly decreases toward the center of the Ge bar, due to the large spin diffusion length, and such a decay is much slower than the exponential one observed in III-V semiconductors, allowing very large spin accumulations over a length scale of tens of micrometers. This lays the foundation for multiterminal spintronic devices, where different spin voltages can be exploited as inputs for magnetologic gates on the same Ge platform.

Spin-exciton interaction and related micro-photoluminescence spectra of ZnSe:Mn DMS nanoribbon

For their spintronic applications the magnetic and optical properties of diluted magnetic semiconductors (DMS) have been studied widely. However, the exact relationships between the magnetic interactions and optical emission behaviors in DMS are not well understood yet due to their complicated microstructural and compositional characters from different growth and preparation techniques. Manganese (Mn) doped ZnSe nanoribbons with high quality were obtained by using the chemical vapor deposition (CVD) method. Successful Mn ion doping in a single ZnSe nanoribbon was identified by elemental energy-dispersive x-ray spectroscopy mapping and micro-photoluminescence (PL) mapping of intrinsic d-d optical transition at 580 nm, i.e. the transition of ⁴ T ₁(⁴ G) → ⁶ A ₁(⁶ s),. Besides the d-d transition PL peak at 580 nm, two other PL peaks related to Mn ion aggregates in the ZnSe lattice were detected at 664 nm and 530 nm, which were assigned to the d-d transitions from the Mn²⁺-Mn²⁺ pairs with ferromagnetic (FM) coupling and antiferromagnetic (AFM) coupling, respectively. Moreover, AFM pair formation goes along with strong coupling with acoustic phonon or structural defects. These arguments were supported by temperature-dependent PL spectra, power-dependent PL lifetimes, and first-principle calculations. Due to the ferromagnetic pair existence, an exciton magnetic polaron (EMP) is formed and emits at 460 nm. Defect existence favors the AFM pair, which also can account for its giant enhancement of spin-orbital coupling and the spin Hall effect observed in PRL 97, 126603(2006) and PRL 96, 196404(2006). These emission results of DMS reflect their relation to local sp-d hybridization, spin-spin magnetic coupling, exciton-spin or phonon interactions covering structural relaxations. This kind of material can be used to study the exciton-spin interaction and may find applications in spin-related photonic devices besides spintronics.

Observation of spin-polarized photoconductivity in (Ga,Mn)As/GaAs heterojunction without magnetic field

In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excite unequal spin polarized carriers in GaAs layer, and (iii) (Ga,Mn)As as the spin filter layer for spin transport from GaAs to (Ga,Mn)As. Different from the previous experiments, the influence coming from the Zeeman splitting induced by an external magnetic field can be avoided here. While temperature dependence experiment indicates that the SPD-PC is mixed with the magnetic uncorrelated signals, which may come from current induced spin polarization.

Optical Spintronics in Organic-Inorganic Perovskite Photovoltaics

Organic-inorganic halide CH3NH3PbI3 solar cells have attracted enormous attention in recent years due to their remarkable power conversion efficiency. When inversion symmetry is broken, these materials should exhibit interesting spin-dependent properties as well, owing to their strong spin-orbit coupling. In this work, we consider the spin-dependent optical response of CH3NH3PbI3. We first use density functional theory to compute the ballistic spin current generated by absorption of unpolarized light. We then consider diffusive transport of photogenerated charge and spin for a thin CH3NH3PbI3 layer with a passivated surface and an Ohmic, non-selective contact. The spin density and spin current are evaluated by solving the drift-diffusion equations for a simplified 3-dimensional Rashba model of the electronic structure of the valence and conduction bands. We provide analytic expressions for the photon flux required to induce measurable spin densities, and propose that these spin densities can provide useful information about the role of grain boundaries in the photovoltaic behavior of these materials. We also discuss the prospects for measuring the optically generated spin current with the inverse spin Hall effect.

Light-Induced Exciton Spin Hall Effect in van der Waals Heterostructures

We propose a light-induced spin Hall effect for interlayer exciton gas in monolayer MoSe2-WSe2 van der Waals heterostructure. By applying two infrared, spatially varying laser beams coupled to the exciton internal states, a spin-dependent gauge potential on the exciton center-of-mass motion is induced. This gauge potential deflects excitons in different spin states towards opposite directions, leading to a finite spin current but vanishing mass current. In the Hall bar geometry, the spin-dependent deflection gives rise to spin-dependent chiral edge states with spin-velocity locking. The spin current and chiral edge states of the excitons can be detected by spatially resolved photoluminescence spectroscopy.

Quantum transport in Rashba spin-orbit materials: a review

In this review article we describe spin-dependent transport in materials with spin-orbit interaction of Rashba type. We mainly focus on semiconductor heterostructures, however we consider topological insulators, graphene and hybrid structures involving superconductors as well. We start from the Rashba Hamiltonian in a two dimensional electron gas and then describe transport properties of two- and quasi-one-dimensional systems. The problem of spin current generation and interference effects in mesoscopic devices is described in detail. We address also the role of Rashba interaction on localisation effects in lattices with nontrivial topology, as well as on the Ahronov-Casher effect in ring structures. A brief section, in the end, describes also some related topics including the spin-Hall effect, the transition from weak localisation to weak anti localisation and the physics of Majorana fermions in hybrid heterostructures involving Rashba materials in the presence of superconductivity.

Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

Bilayer phosphorene attracted considerable interest, giving a potential application in nanoelectronics owing to its natural bandgap and high carrier mobility. However, very little is known regarding the possible usefulness in spintronics as a quantum spin Hall (QSH) state of material characterized by a bulk energy gap and gapless spin-filtered edge states. Here, we report a strain-induced topological phase transition from normal to QSH state in bilayer phosphorene, accompanied by band-inversion that changes number from 0 to 1, which is highly dependent on interlayer stacking. When the bottom layer is shifted by 1/2 unit-cell along zigzag/armchair direction with respect to the top layer, the maximum topological bandgap 92.5 meV is sufficiently large to realize QSH effect even at room-temperature. An optical measurement of QSH effect is therefore suggested in view of the wide optical absorption spectrum extending to far infra-red, making bilayer phosphorene a promising candidate for opto-spintronic devices.

Tunable giant spin hall conductivities in a strong spin-orbit semimetal: Bi(1-x) Sb(x)

Intrinsic spin Hall conductivities are calculated for strong spin-orbit Bi(1-x)Sb(x) semimetals, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 (ℏ/e)(Ω  cm)^{-1} for bismuth to 96 (ℏ/e)(Ω  cm)^{-1} for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi(0.83)Sb(0.17). The spin Hall conductivity could be changed by a factor of 5 for doped Bi, or for Bi(0.83)Sb(0.17), by changing the chemical potential by 0.5 eV, suggesting the potential for doping or voltage tuned spin Hall current.

Growth of c-axis-oriented superconducting KFe₂As₂ thin films

KFe2As2, an iron-based superconductor, is expected to exhibit large spin Hall conductivity, and fabrication of high-quality thin films is requisite for evaluation of this effect and application to spintronics devices. Thin-film growth of KFe2As2 is difficult because of two intrinsic properties; its extremely hygroscopic nature and the high vapor pressure of potassium. We solved these issues by combining room-temperature pulsed laser deposition using K-rich KFe2As2 targets with thermal crystallization in KFe2As2 powder after encapsulation in an evacuated silica-glass tube with all of the processes conducted in a vacuum chamber and a dry Ar atmosphere in a glovebox. The optimized KFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates were obtained by crystallization at 700 °C, and they were strongly c-axis oriented. The electrical measurements were performed with thin films protected by grease passivation to block reaction with the atmosphere. The KFe2As2 films exhibited a superconductivity transition at 3.7 K.

Current-induced spin polarization in anisotropic spin-orbit fields

The magnitude and direction of current-induced spin polarization and spin-orbit splitting are measured in In0.04Ga0.96 As epilayers as a function of in-plane electric and magnetic fields. We show that, contrary to expectation, the magnitude of the current-induced spin polarization is smaller for crystal directions corresponding to larger spin-orbit fields. Furthermore, we find that the steady-state in-plane spin polarization does not align along the spin-orbit field, an effect due to anisotropy in the spin relaxation rate.

Spin transport study in a Rashba spin-orbit coupling system

One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility D_s/μ_s = 0.08 V was extracted at room temperature.

Maximum intrinsic spin-Hall conductivity in two-dimensional systems with k-linear spin-orbit interaction

We analytically calculate the intrinsic spin-Hall conductivities (ISHCs) (σ(z)(xy) and σ(z)(yx)) in a clean, two-dimensional system with generic k-linear spin-orbit interaction. The coefficients of the product of the momentum and spin components form a spin-orbit matrix β̃. We find that the determinant of the spin-orbit matrix detβ̃ describes the effective coupling of the spin sz and orbital motion Lz. The decoupling of spin and orbital motion results in a sign change of the ISHC and the band-overlapping phenomenon. Furthermore, we show that the ISHC is in general unsymmetrical (σ(z)(xy) ≠ -σ(z)(yx)), and it is governed by the asymmetric response function Δβ̃, which is the difference in band-splitting along two directions: those of the applied electric field and the spin-Hall current. The obtained non-vanishing asymmetric response function also implies that the ISHC can be larger than e/8π, but has an upper bound value of e/4π. We will show that the unsymmetrical properties of the ISHC can also be deduced from the manifestation of the Berry curvature in the nearly degenerate area. On the other hand, by investigating the equilibrium spin current, we find that detβ̃ determines the field strength of the SU(2) non-Abelian gauge field.

Hall voltages without a magnetic field in a non-uniform two-dimensional electron system

We report on a measurement of giant second-harmonic Hall voltages which occur without a magnetic field and do not change their sign on current reversal in a two-dimensional electron system with a transverse density gradient. A quadratic dependence on the electric field, a strong temperature dependence, and both magnitude and directional dependence on the magnetic field are also observed. Such behavior points towards a plausible explanation based on a novel spin Hall effect with in-plane spin polarization.

Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs

Full electric-field control of spin orientations is one of the key tasks in semiconductor spintronics. We demonstrate that electric-field pulses can be utilized for phase-coherent ±π spin rotation of optically generated electron spin packets in InGaAs epilayers detected by time-resolved Faraday rotation. Through spin-orbit interaction, the electric-field pulses act as local magnetic field pulses. By the temporal control of the local magnetic field pulses, we can turn on and off electron spin precession and thereby rotate the spin direction into arbitrary orientations in a two-dimensional plane. Furthermore, we demonstrate a spin-echo-type spin drift experiment and find an unexpected partial spin rephasing, which is evident by a doubling of the spin dephasing time.

Spin Hall effect devices

The spin Hall effect is a relativistic spin-orbit coupling phenomenon that can be used to electrically generate or detect spin currents in non-magnetic systems. Here we review the experimental results that, since the first experimental observation of the spin Hall effect less than 10 years ago, have established the basic physical understanding of the phenomenon, and the role that several of the spin Hall devices have had in the demonstration of spintronic functionalities and physical phenomena. We have attempted to organize the experiments in a chronological order, while simultaneously dividing the Review into sections on semiconductor or metal spin Hall devices, and on optical or electrical spin Hall experiments. The spin Hall device studies are placed in a broader context of the field of spin injection, manipulation, and detection in non-magnetic conductors.

Observation of the inverse spin Hall effect in silicon

The spin–orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, where accessing the spin Hall effects has been believed to be difficult because of its very weak spin–orbit interaction. Here we report observation of the inverse spin Hall effect in silicon at room temperature. The spin/charge current conversion efficiency, the spin Hall angle, is obtained as 0.0001 for a p-type silicon film. In spite of the small spin Hall angle, we found a clear electric voltage due to the inverse spin Hall effect in the p-Si film, demonstrating that silicon can be used as a spin-current detector.

The spin Hall effect is a spin current induced by an electric current, and its occurrence in semiconductors is a promising route to controlling spins and their transport. Here, the inverse spin Hall effect, in which an electric current is induced by a spin current, is observed in silicon for the first time.

Current-induced spin-orbit torques

The ability to reverse the magnetization of nanomagnets by current injection has attracted increased attention ever since the spin-transfer torque mechanism was predicted in 1996. In this paper, we review the basic theoretical and experimental arguments supporting a novel current-induced spin torque mechanism taking place in ferromagnetic (FM) materials. This effect, hereafter named spin-orbit (SO) torque, is produced by the flow of an electric current in a crystalline structure lacking inversion symmetry, which transfers orbital angular momentum from the lattice to the spin system owing to the combined action of SO and exchange coupling. SO torques are found to be prominent in both FM metal and semiconducting systems, allowing for great flexibility in adjusting their orientation and magnitude by proper material engineering. Further directions of research in this field are briefly outlined.

Electron spin polarization-based integrated photonic devices

The lack of optical isolators has limited the serial integration of components in the development of photonic integrated circuits. Isolators are inherently nonreciprocal and, as such, require nonreciprocal optical propagation. We propose a class of integrated photonic devices that make use of electrically-generated electron spin polarization in semiconductors to cause nonreciprocal TE/TM mode conversion. Active control over the non-reciprocal mode coupling rate allows for the design of electrically-controlled isolators, circulators, modulators and switches. We analyze the effects of waveguide birefringence and absorption loss as limiting factors to device performance.

Observation of intrinsic inverse spin Hall effect

We report observation of intrinsic inverse spin Hall effect in undoped GaAs multiple quantum wells with a sample temperature of 10 K. A transient ballistic pure spin current is injected by a pair of laser pulses through quantum interference. By time resolving the dynamics of the pure spin current, the momentum relaxation time is deduced, which sets the lower limit of the scattering time between electrons and holes. The transverse charge current generated by the pure spin current via the inverse spin Hall effect is simultaneously resolved. We find that the charge current is generated well before the first electron-hole scattering event. Generation of the transverse current in the scattering-free ballistic transport regime provides unambiguous evidence for the intrinsic inverse spin Hall effect.

Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures

We report the optical measurement of the spin dynamics at elevated temperatures and in zero magnetic field for two types of degenerately doped n-InSb quantum wells (QWs), one asymmetric (sample A) and one symmetric (sample B) with regards to the electrostatic potential across the QW. Making use of three directly determined experimental parameters: the spin lifetime, τ(s), the sheet carrier concentration, n, and the electron mobility, μ, we directly extract the zero-field spin splitting. For the asymmetric sample where the Rashba interaction is the dominant source of spin splitting, we deduce a room temperature Rashba parameter of α = 0.09 ± 0.1 eV Å which is in good agreement with calculations and we estimate the Rashba coefficient α(0) (a figure of merit for the ease with which electron spins can be modulated via an electric field). We review the merits/limitations of this approach and the implications of our findings for spintronic devices.

Anisotropic spin Hall effect from first principles

We report on first principles calculations of the anisotropy of the intrinsic spin Hall conductivity (SHC) in nonmagnetic hcp metals and in antiferromagnetic Cr. For most of the metals of this study we find large anisotropies. We derive the general relation between the SHC vector and the direction of spin polarization and discuss its consequences for hcp metals. Especially, it is predicted that for systems where the SHC changes sign due to the anisotropy the spin Hall effect may be tuned such that the spin polarization is parallel either to the electric field or to the spin current.

Electrical measurement of the direct spin hall effect in Fe/InxGa(1-x)As heterostructures

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa(1-x)As heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa(1-x)As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

Spin control of drifting electrons using local nuclear polarization in ferromagnet-semiconductor heterostructures

We demonstrate methods to locally control the spin rotation of moving electrons in a GaAs channel. The Larmor frequency of optically injected spins is modulated when the spins are dragged through a region of spin-polarized nuclei created at a MnAs/GaAs interface. The effective field created by the nuclei is controlled either optically or electrically using the ferromagnetic proximity polarization effect. Spin rotation is also tuned by controlling the carrier traverse time through the polarized region. We demonstrate coherent spin rotations of 5π   rad during transport.

Spin polarization induced by in-plane electric and magnetic fields in two-dimensional heavy-hole systems

Using a nonequilibrium Green function approach, we systematically investigate the current induced spin polarization (CISP) in a two-dimensional heavy-hole system with cubic Rashba spin-orbit coupling, driven by in-plane electric and magnetic fields. We find that when a magnetic field is applied along the direction of electric field, the longitudinal conductivity drops monotonously with an increase of magnetic-field strength or of hole density. The spin polarization along the electric-field direction is just the Pauli paramagnetism and it quadratically increases with an increase of hole density. The nonvanishing out-of-plane component of spin polarization emerges for both short-range and long-range disorders, and it changes sign with the variation of magnetic field, especially for long-range hole-impurity scattering. In the magnetic-field dependences of this out-of-plane CISP and of the in-plane CISP perpendicular to the electric field, there are singular magnetic fields, below or above which the effects of magnetic field are completely different.

Generation and detection of spin current in the three-terminal quantum dot

We propose a novel device composed of a quantum dot tunneling coupled to ferromagnetic, superconducting, and normal-metal leads. This device can generate, manipulate, and detect pure spin current through the interplay between the spin-polarized quantum transport and the Andreev reflection. The spin current in this device is a well-defined conserved current since there is no need for any spin-orbit coupling. The proposed device is realizable using present nanotechnology.

Spin Hall drag in electronic bilayers

We predict a new effect in electronic bilayers: spin Hall drag. The effect consists of the generation of spin accumulation across one layer by an electric current along the other layer. It arises from the combined action of spin-orbit and Coulomb interactions. Our theoretical analysis, based on the Boltzmann equation formalism, identifies two main contributions to the spin Hall drag resistivity: the side-jump contribution, which dominates at low temperature, going as T2, and the skew-scattering contribution, which is proportional to T3. The induced spin accumulation, while generally quite small, should be observable in optical rotation experiments.

Spin-Hall effect and spin-Coulomb drag in doped semiconductors

In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed.

Intrinsic spin hall effect induced by quantum phase transition in HgCdTe quantum wells

The spin Hall effect can be induced by both extrinsic impurity scattering and intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. By tuning the Cd content, the well width, or the bias electric field across the quantum well, the intrinsic spin Hall effect can be switched on or off and tuned into resonance under experimentally accessible conditions.

Giant spin Hall effect in perpendicularly spin-polarized FePt/Au devices

Conversion of charge current into pure spin current and vice versa in non-magnetic semiconductors or metals, which are called the direct and inverse spin Hall effects (SHEs), provide a new functionality of materials for future spin-electronic architectures. Thus, the realization of a large SHE in a device with a simple and practical geometry is a crucial issue for its applications. Here, we present a multi-terminal device with a Au Hall cross and an FePt perpendicular spin injector to detect giant direct and inverse SHEs at room temperature. Perpendicularly magnetized FePt injects or detects perpendicularly polarized spin current without magnetic field, enabling the unambiguous identification of SHEs. The unprecedentedly large spin Hall resistance of up to 2.9 mOmega is attributed to the large spin Hall angle in Au through the skew scattering mechanism and the highly efficient spin injection due to the well-matched spin resistances of the chosen materials.

Phase diagram of the spin Hall effect

We obtain analytic formulas for the frequency-dependent spin-Hall conductivity of a two-dimensional electron gas (2DEG) in the presence of impurities, linear spin-orbit Rashba interaction, and external magnetic field perpendicular to the 2DEG. We show how different mechanisms (skew scattering, side jump, and spin precession) can be brought in or out of focus by changing controllable parameters such as frequency, magnetic field, and temperature. We find, in particular, that the dc spin-Hall conductivity vanishes in the absence of a magnetic field, while a magnetic field restores the skew-scattering and side jump contributions proportionally to the ratio of magnetic and Rashba fields.

Intrinsic spin-Hall effect: topological transitions in two-dimensional systems

Topological transitions are the discontinuous changes of the Berry phase caused by continuous variation of parameters. These transitions can be detected by investigating the spin-Hall effect in two-dimensional electron and hole systems with a spin-obrit interaction when the density of carriers or the structural asymmetry are varied. The discontinuous behavior and the universality features of the spin-Hall conductivity are determined by the topological properties of the spin-orbit field.

Evolution of the spin Hall effect in Pt nanowires: size and temperature effects

We have studied the evolution of the spin Hall effect (SHE) in the regime where the material size responsible for the spin accumulation is either smaller or larger than the spin diffusion length. Lateral spin valve structures with Pt insertions were successfully used to measure the spin absorption efficiency as well as the spin accumulation in Pt induced through the spin Hall effect. Under a constant applied current the results show a decrease of the spin accumulation signal is more pronounced as the Pt thickness exceeds the spin diffusion length. This implies that the spin accumulation originates from bulk scattering inside the Pt wire and the spin diffusion length limits the SHE. We have also analyzed the temperature variation of the spin Hall conductivity to identify the dominant scattering mechanism.