Zero-differential resistance state of two-dimensional electron systems in strong magnetic fields

Moving Crystal Phases of a Quantum Wigner Solid in an Ultra-High-Quality 2D Electron System

In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings (ν) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with nonlinear current-voltage (I-V) and noise characteristics. We report here measurements on an ultralow-disorder, dilute 2DES, confined to a GaAs quantum well. In the ν<1/5 range, superimposed on a highly insulating longitudinal resistance, the 2DES exhibits a developing fractional quantum Hall state at ν=1/7, attesting to its exceptional high quality and dominance of electron-electron interaction in the low filling regime. In the nearby insulating phases, we observe remarkable nonlinear I-V and noise characteristics as a function of increasing current, with current thresholds delineating three distinct phases of the WS: a pinned phase (P1) with very small noise, a second phase (P2) in which dV/dI fluctuates between positive and negative values and is accompanied by very high noise, and a third phase (P3) where dV/dI is nearly constant and small, and noise is about an order of magnitude lower than in P2. In the depinned (P2 and P3) phases, the noise spectrum also reveals well-defined peaks at frequencies that vary linearly with the applied current, suggestive of washboard frequencies. We discuss the data in light of a recent theory that proposes different dynamic phases for a driven WS.

Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation

The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈10⁷ cm²/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate that the narrow negative magnetoresistance effect exhibits substantially increased broadening with increasing microwave intensity. These magnetoresistance data were subjected to lineshape fits to extract possible variation of characteristic lengths with microwave intensity; the results suggest that characteristic lengths decrease by up to 50% upon increasing microwave power up to about 8 mW. We also examine the change in effective electron temperature, T_e, due to the photo-excitation in the absence of a magnetic field. Combining these results suggests a correlation between electron heating and the observed change in the fit extracted characteristic lengths.

Electron heating induced by an ac-bias current in the regime of Shubnikov-de Haas oscillation in the high mobility GaAs/Al x Ga1-x As two-dimensional electron system

The magnetotransport properties of the high mobility GaAs/AlGaAs two-dimensional electron gas systems have been examined to determine the influence of the ac current bias on the carrier temperature. The changes in the line shape of Shubnikov-de Haas oscillations in the longitudinal magnetoresistance ([Formula: see text]) were followed as a function of the ac current bias in the temperature range of [Formula: see text] in order to determine the carrier heating effect due to the ac bias. The lineshape analysis of these oscillations indicates that the carrier temperature of the two-dimensional electron system is linearly proportional to the ac bias current.

Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES

A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 10⁷cm²/Vs is experimentally examined as a function of the sample temperature, T. The temperature dependent magnetoresistance data were fit using the Hikami et al. theory, without including the spin-orbit correction, to extract the inelastic length, l_i, which decreases rapidly with increasing temperature. It turns out that l_i < l_e, where l_e is the elastic length, for all T. Thus, we measured the single particle lifetime, τ_s, and the single particle mean free path l_s = v_Fτ_s. A comparison between l_i and l_s indicates that l_i > l_s. The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.

Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I_dc. The I_dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing I_dc. The results suggest the interpretation that the I_dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.

Nonlinear magnetoresistance oscillations in intensely irradiated two-dimensional electron systems induced by multiphoton processes

We report on magneto-oscillations in differential resistivity of a two-dimensional electron system subject to intense microwave radiation. The period of these oscillations is determined not only by microwave frequency but also by its intensity. A theoretical model based on quantum kinetics at high microwave power captures all important characteristics of this phenomenon which is strongly nonlinear in microwave intensity. Our results demonstrate a crucial role of the multiphoton processes near the cyclotron resonance and its harmonics in the presence of strong dc electric field and offer a unique way to reliably determine the intensity of microwaves acting on electrons.

Phonon-induced resistance oscillations in 2D systems with a very high electron mobility

We report on the temperature dependence of acoustic-phonon-induced resistance oscillations in very-high mobility two-dimensional electron systems. We observe that the temperature dependence is nonmonotonic and that higher order oscillations are best developed at progressively lower temperatures. Our analysis shows that, in contrast with the Shubnikov-de Haas effect, phonon-induced resistance oscillations are sensitive to electron-electron interactions modifying the single particle lifetime.

Temperature dependence of microwave photoresistance in 2D electron systems

We report on the temperature dependence of microwave-induced resistance oscillations in high-mobility two-dimensional electron systems. We find that the oscillation amplitude decays exponentially with increasing temperature, as exp(-alphaT;{2}), where alpha scales with the inverse magnetic field. This observation indicates that the temperature dependence originates primarily from the modification of the single particle lifetime, which we attribute to electron-electron interaction effects.

Microwave photoresistance in dc-driven 2D systems at cyclotron resonance subharmonics

We study microwave photoresistivity oscillations in a high-mobility two-dimensional electron system subject to strong dc electric fields. We find that near the second subharmonic of the cyclotron resonance the frequency of the resistivity oscillations with a dc electric field is twice the frequency of the oscillations at the cyclotron resonance, its harmonics, or in the absence of microwave radiation. This observation is discussed in terms of the microwave-induced sidebands in the density of states and the interplay between different scattering processes in the separated Landau level regime.

Resonant phonon scattering in quantum Hall systems driven by dc electric fields

Using dc excitation to spatially tilt Landau levels, we study resonant acoustic phonon scattering in two-dimensional electron systems. We observe that dc electric field strongly modifies phonon resonances, transforming resistance maxima into minima and back into maxima. Further, phonon resonances are enhanced dramatically in the nonlinear dc response and can be detected even at low temperatures. Most of our observations can be explained in terms of dc-induced (de)tuning of the resonant acoustic phonon scattering and its interplay with inter-Landau level impurity scattering. Finally, we observe a resistance maximum when the electron drift velocity approaches the speed of sound and a dc-induced zero-differential resistance state.