High K BaTiO(3) films from metalloorganic precursors

Wet Chemical Derived Films For Electrical Applications

Wet chemical methods have been used with success to synthesize films for a variety of electrical applications. After first reviewing the important microstructural features of films, the present paper focuses attention on ferroelectric (FE) films. The present state of and critical issues facing wet chemically derived FE films are considered. The needs for more extensive microstructural characterization and for more systematic exploration of electrical behavior are emphasized.

Ferroelectric Film Synthesis, Past and Present: A Select Review

A review of the history of ferroelectric (FE) thin film synthesis is given covering the period of the 1960's to the present. Early methods, materials and applications are discussed. An assessment of the recent upsurge in activity takes note of current targeted applications, including nonvolatile memory, piezoelectric actuators, capacitors, and electro-optic devices. Focus is placed on similarities and differences in the most common film deposition processes. Comparison of microstructure and composition variation seen in films deposited by sputtering, laser ablation, and solution deposition is made. More detailed understanding of process-microstructure relations is stressed as necessary for film property control. Also discussed are the roles of substrate interactions and interface layers in thin film growth.

Preparation and properties of PbTiO(3) and Pb(Sc(0.5 )Ta(0.5))O(3) thin films by sol-gel processing

Crack-free and dense PbTiO(3) films 1-2 mum thick were prepared by spinning a sol-gel derived solution onto an appropriate substrate, and firing and annealing the film at temperatures of 750-800 degrees C. The electrical properties of the films were studied as a function of temperature, frequency, and DC bias. Also, crack-free films of Pb(Sc(0.5)Ta(0.5))O(3) with an average grain size of 0.4 mum were prepared using a novel two-stage process. Films 4 mum thick had moderately high relative permittivities, low dissipation factors, and high resistivity.