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Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays. SCIENCE AND TECHNOLOGY OF NUCLEAR INSTALLATIONS 2022. [DOI: 10.1155/2022/1283926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Transistors working in complex radiation environments such as space are simultaneously irradiated by neutrons and gamma rays. But the mechanism of the synergistic radiation effect between the two rays is still unclear. Based on TCAD, the synergistic radiation effects of ionizing/displacement damage caused by mixed neutrons and gamma rays are simulated. The results demonstrate that the synergistic effects are more serious than the simple sum of the two radiation effects due to their mutual enhancement. The change of the carrier recombination rate in the device at different positions shows that the displacement effects increase the peak value of surface recombination rate; meanwhile, the ionizing dose effects enhance the recombination process in bulk silicon. The mechanism of this phenomenon is that positive charges from the oxide layer and interface enhance the recombination of carriers in bulk, and the reduced carrier lifetime caused by defects from bulk makes carriers more likely to be trapped by the interface traps. In addition, the simulation result which shows the influence of temperature on the synergistic effects indicates that the synergistic effects are more sensitive to the lower temperature.
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Yang G, Wu K, Liu J, Zou D, Li J, Lu Y, Lv X, Xu J, Qiao L, Liu X. Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon. NANOMATERIALS 2020; 10:nano10050886. [PMID: 32380671 PMCID: PMC7279494 DOI: 10.3390/nano10050886] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Revised: 04/29/2020] [Accepted: 04/29/2020] [Indexed: 11/17/2022]
Abstract
Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect could be greatly reduced by increasing the doping concentration in the flux range of 5 × 109–5 × 1010 n cm−2 s−1. The simulation based on the theory of diffusion-limited reactions indicated that the ELNFS in boron-doped silicon might be caused by the difference in the concentration of remaining vacancy-related defects (Vr) under different neutron fluxes. The ELNFS effect in silicon becomes obvious when the (Vr) is close to the boron doping concentration and decreased with the increase in boron doping concentration due to the remaining vacancy-related defects being covered. These conclusions are confirmed by the p+-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain (β) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. Our work demonstrates that the ELNFS effect in boron-doped silicon can be well explained by noise diagnostic analysis together with electrical methods and simulation, which thus provide the basis for detecting the enhanced low-particle-flux damage effect in other semiconductor materials.
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Affiliation(s)
- Guixia Yang
- Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China; (G.Y.); (J.X.)
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China; (K.W.); (J.L.); (D.Z.); (J.L.); (Y.L.); (X.L.)
| | - Kunlin Wu
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China; (K.W.); (J.L.); (D.Z.); (J.L.); (Y.L.); (X.L.)
| | - Jianyong Liu
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China; (K.W.); (J.L.); (D.Z.); (J.L.); (Y.L.); (X.L.)
| | - Dehui Zou
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China; (K.W.); (J.L.); (D.Z.); (J.L.); (Y.L.); (X.L.)
| | - Junjie Li
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China; (K.W.); (J.L.); (D.Z.); (J.L.); (Y.L.); (X.L.)
| | - Yi Lu
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China; (K.W.); (J.L.); (D.Z.); (J.L.); (Y.L.); (X.L.)
| | - Xueyang Lv
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China; (K.W.); (J.L.); (D.Z.); (J.L.); (Y.L.); (X.L.)
| | - Jiayun Xu
- Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China; (G.Y.); (J.X.)
| | - Liang Qiao
- School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
- Correspondence: (L.Q.); (X.L.); Tel.: +86-135-5139-2292 (L.Q.); +86-187-8161-3253 (X.L.)
| | - Xuqiang Liu
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China; (K.W.); (J.L.); (D.Z.); (J.L.); (Y.L.); (X.L.)
- Correspondence: (L.Q.); (X.L.); Tel.: +86-135-5139-2292 (L.Q.); +86-187-8161-3253 (X.L.)
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Hegde VN, Praveen K, Pradeep T, Pushpa N, Cressler JD, Tripathi A, Asokan K, Gnana Prakash A. High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs. NUCLEAR ENGINEERING AND TECHNOLOGY 2019. [DOI: 10.1016/j.net.2019.03.016] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Huang Q, Jiang J. An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools. PROGRESS IN NUCLEAR ENERGY 2019. [DOI: 10.1016/j.pnucene.2019.02.008] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Lawal OM, Li Z, Liu S, Hussain A, Yang J, Zhao H, Xiong C. Experimental study of pulse neutron irradiation damage in SiGe HBT. J NUCL SCI TECHNOL 2018. [DOI: 10.1080/00223131.2018.1512427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
Affiliation(s)
| | - Zhuoqi Li
- Department of Nuclear Science and Technology, Xi’an Jioatong University, Xi’an, China
| | - Shuhuan Liu
- Department of Nuclear Science and Technology, Xi’an Jioatong University, Xi’an, China
| | - Aqil Hussain
- Department of Nuclear Science and Technology, Xi’an Jioatong University, Xi’an, China
| | - JiangKun Yang
- Department of Nuclear Science and Technology, Xi’an Jioatong University, Xi’an, China
| | - Hongchao Zhao
- Department of Physics, China Academy of Engineering Physics, MiianYang, Chengdu, China
| | - Cen Xiong
- Department of Physics, China Academy of Engineering Physics, MiianYang, Chengdu, China
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