Suppression of Tomato mosaic virus disease in tomato plants by deep ultraviolet irradiation using light-emitting diodes

Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer

This paper reports an AlGaN-based ultraviolet-B light-emitting diode (UVB-LED) with a peak wavelength at 293 nm that was almost free of efficiency droop in the temperature range from 298 to 358 K. Its maximum external quantum efficiencies (EQEs), which were measured at a current density of 88.6 A cm–2, when operated at 298, 318, and 338 K were 2.93, 2.84, and 2.76%, respectively; notably, however, the current droop (J-droop) in each of these cases was less than 1%. When the temperature was 358 K, the maximum EQE of 2.61% occurred at a current density of 63.3 A cm–2, and the J-droop was 1.52%. We believe that the main mechanism responsible for overcoming the J-droop was the uniform distribution of the concentrations of injected electrons and holes within the multiple quantum wells. Through the subtle design of the p-type AlGaN layer, with the optimization of the composition and doping level, the hole injection efficiency was enhanced, and the Auger recombination mechanism was inhibited in an experimental setting.

Luminescent quantum dot films improve light use efficiency and crop quality in greenhouse horticulture

The spectral quality of sunlight reaching plants remains a path for optimization in greenhouse cultivation. Quantum dots represent a novel, emission-tunable luminescent material for optimizing the sunlight spectrum in greenhouses with minimal intensity loss, ultimately enabling improved light use efficiency of plant growth without requiring electricity. In this study, greenhouse films containing CuInS₂/ZnS quantum dots were utilized to absorb and convert ultraviolet and blue photons from sunlight to a photoluminescent emission centered at 600 nm. To analyze the effects of the quantum dot film spectrum on plant production, a 25-week tomato trial was conducted in Dutch glass greenhouses. Plants under the quantum dot film experienced a 14% reduction in overall daily light integral, resulting from perpendicular photosynthetically active radiation transmission of 85.3%, mainly due to reflection losses. Despite this reduction in intensity, the modified sunlight spectrum and light diffusion provided by the quantum dot film gave rise to 5.7% improved saleable production yield, nearly identical total fruiting biomass production, 23% higher light use efficiency (g/mol), 10% faster vegetative growth rate, and 36% reduced tomato waste compared to the control, which had no additional films. Based on this result, materials incorporating quantum dots show promise in enabling passive, electricity-free spectrum modification for improving crop production in greenhouse cultivation, but extensive controlled crop studies are needed to further validate their effectiveness.

Efficiency Droop and Degradation in AlGaN-Based UVB Light-Emitting Diodes

In this study, we found that the current droop (J-droop) in AlGaN-based UVB light-emitting diodes was more obvious at higher temperatures, despite both the main and parasitic peaks undergoing monotonic decreases in their intensity upon an increase in the temperature. The slower temperature droop (T-droop) did not occur when the forward current was increased to temperatures greater than 298 K. After an aging time of 6000 h, the emission wavelengths did not undergo any obvious changes, while the intensity of the parasitic peak barely changed. Thus, the degradation in the light output power during long-term operation was not obviously correlated to the existence of the parasitic peak.

Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance

Crystal growth of eco-friendly, ultrawide bandgap aluminium gallium nitride (AlGaN) semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to replace toxic mercury-based ultraviolet lamps. One of the major drawbacks in the utilisation of AlGaN-based UVB LEDs is their low efficiency of about 6.5%. The study investigates the influence of Al-graded p-type multi-quantum-barrier electron-blocking-layer (Al-grad p-MQB EBL) and Al-graded p-AlGaN hole source layer (HSL) on the generation and injection of 3D holes in the active region. Using the new UVB LED design, a significant improvement in the experimental efficiency and light output power of about 8.2% and 36 mW is noticed. This is accomplished by the transparent nature of Al-graded Mg-doped p-AlGaN HSL for 3D holes generation and p-MQB EBL structure for holes transport toward multi-quantum-wells via intra-band tunnelling. Based on both the numerical and experimental studies, the influence of sub-nanometre scale Ni film deposited underneath the 200 nm-thick Al-film p-electrode on the optical reflectance in UVB LED is investigated. A remarkable improvement in the efficiency of up to 9.6% and light output power of 40 mW, even in the absence of standard package, flip-chip, and resin-like lenses, is achieved on bare-wafer under continuous-wave operation at room temperature. The enhanced performance is attributed to the use of Al-graded p-MQB EBL coupled with softly polarised p-AlGaN HSL and the highly reflective 0.4 nm-thick Ni and 200 nm-thick Al p-electrode in the UVB LED. This research study provides a new avenue to improve the performance of high-power p-AlGaN-based UVB LEDs and other optoelectronic devices in III–V semiconductors.

Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer

The electron blocking layer (EBL) plays a vital role in blocking the electron overflow from an active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides the blocking of electron overflow, EBL reduces hole injection toward the active region. In this work, we proposed a DUV nanowire (NW) LED structure without EBL by replacing it with a compositionally continuous graded hole source layer (HSL). Our proposed graded HSL without EBL provides a better electron blocking effect and enhanced hole injection efficiency. As a result, optical power is improved by 48% and series resistance is reduced by 50% with 4.8 V threshold voltage. Moreover, graded HSL without EBL offer reduced electric field within the active region, which leads to a significant increment in radiative recombination rate and enhancement of spontaneous emission by 34% at 254 nm wavelength, as a result, 52% maximum internal quantum efficiency with 24% efficiency drop is reported.

Modulation of Phototropin Signalosome with Artificial Illumination Holds Great Potential in the Development of Climate-Smart Crops

Changes in environmental conditions like temperature and light critically influence crop production. To deal with these changes, plants possess various photoreceptors such as Phototropin (PHOT), Phytochrome (PHY), Cryptochrome (CRY), and UVR8 that work synergistically as sensor and stress sensing receptors to different external cues. PHOTs are capable of regulating several functions like growth and development, chloroplast relocation, thermomorphogenesis, metabolite accumulation, stomatal opening, and phototropism in plants. PHOT plays a pivotal role in overcoming the damage caused by excess light and other environmental stresses (heat, cold, and salinity) and biotic stress. The crosstalk between photoreceptors and phytohormones contributes to plant growth, seed germination, photo-protection, flowering, phototropism, and stomatal opening.

Molecular genetic studies using gene targeting and synthetic biology approaches have revealed the potential role of different photoreceptor genes in the manipulation of various beneficial agronomic traits. Overexpression of PHOT2 in Fragaria ananassa leads to the increase in anthocyanin content in its leaves and fruits. Artificial illumination with blue light alone and in combination with red light influence the growth, yield, and secondary metabolite production in many plants, while in algal species, it affects growth, chlorophyll content, lipid production and also increases its bioremediation efficiency. Artificial illumination alters the morphological, developmental, and physiological characteristics of agronomic crops and algal species. This review focuses on PHOT modulated signalosome and artificial illumination-based photo-biotechnological approaches for the development of climate-smart crops.

Suppressing the efficiency droop in AlGaN-based UVB LEDs

The optoelectronic properties of semiconducting aluminum gallium nitride (AlGaN)-based ultraviolet-B (UVB) light-emitting diodes (LEDs) are crucial for real-world medical applications such as cancer therapy and immunotherapy. However, the performance of AlGaN-based UVB LED devices is still poor due to the low hole injection efficiency. Therefore, we have numerically investigated the performance of AlGaN-based UVB LEDs for the suppression of efficiency droop as well as for the enhancement of hole injection in the multiquantum wells (MQWs). The influence of the undoped (ud)-AlGaN final quantum barrier (FQB), as well as the Mg-doped multiquantum barrier electron blocking layer (p-MQB EBL), on the efficiency droop has been focused on specifically. To evaluate the performance of the proposed device, we have compared its internal quantum efficiency (IQE), carrier concentration, energy band diagram, and radiative recombination rate with the conventional device structure. Furthermore, the influence of Al composition in the Al-graded p-AlGaN hole source layer (HSL) on the operating voltages of the proposed UVB LEDs was considered. The simulation results suggest that our proposed structure has a high peak efficiency and much lower efficiency droop as compared to the reference structure (conventional). Ultimately, the radiative recombination rate in the MQWs of the proposed UVB LED-N structure has increased up to ∼73%, which is attributed to the enhanced level of electron and hole concentrations by ∼64% and 13%, respectively, in the active region. Finally, a high efficiency droop of up to ∼42% in RLED has been successfully suppressed, to ∼7%, by using the optimized ud-AlGaN FQB and the p-MQB EBL, as well as introducing Al-graded p-AlGaN HSL in the proposed UVB LED-N structure.

Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters

Mg-doped p-type semiconducting aluminium-gallium-nitride hole source layer (p-AlGaN HSL) materials are quite promising as a source of hole 'p' carriers for the ultraviolet-B (UVB) light-emitting diodes (LEDs) and laser diodes (LDs). However, the p-AlGaN HSL has a central issue of low hole injection due to poor activation of Mg atoms, and the presence of unwanted impurity contamination and the existence of a localized coherent state. Therefore, first the impact of the Mg level on the crystallinity, Al composition and relaxation conditions in the p-AlGaN HSL were studied. An increasing trend in the lattice-relaxation ratios with increasing Mg concentrations in the p-AlGaN HSL were observed. Ultimately, a 40%-60% relaxed and 1.4 μm thick p-AlGaN HSL structure with total threading dislocation densities (total-TDDs) of approximately ∼8-9 × 10⁸ cm^-2 was achieved, which almost matches our previous design of a 4 μm thick and 50% relaxed n-AlGaN electron source layer (ESL) with total-TDDs of approximately ∼7-8 × 10⁸ cm^-2. Subsequently, structurally a symmetric p-n junction for UVB emitters was accomplished. Finally, the influence of excimer laser annealing (ELA) on the activation of Mg concentration and on suppression of unwanted impurities as well as on the annihilation of the localized energy state in the p-AlGaN HSL were thoroughly investigated. ELA treatment suggested a reduced Ga-N bonding ratio and increased Ga-O, as well as Ga-Ga bonding ratios in the p-AlGaN HSL. After ELA treatment the localized coherent state was suppressed and, ultimately, the photoluminescence emission efficiency as well as conductivity were drastically improved in the p-AlGaN HSL. By using lightly polarized p-AlGaN HSL assisted by ELA treatment, quite low resistivity in p-type AlGaN HSL at room temperature (hole concentration is ∼2.6 × 10¹⁶ cm^-3, the hole mobility is ∼9.6 cm² V¹ s^-1 and the resistivity is ∼24.39 Ω. cm) were reported. ELA treatment has great potential for localized activation of p-AlGaN HSL as well as n- and p-electrodes on n-AlGaN and p-AlGaN contact layers during the flip-chip (FC) process in low operating UVB emitters, including UVB lasers.

Effects of enhanced UV-B radiation on the interaction between rice and Magnaporthe oryzae in Yuanyang terrace

Enhanced ultraviolet-B (UV-B) radiation affected the growth of rice and Magnaporthe oryzae, and changed the interactions between them. Increased UV-B radiation (5.0 kJ m-2 d-1) on rice leaves in a Yuanyang terrace was conducted before, during, and after infection of the leaves with Magnaporthe oryzae. The relationship between rice blast and UV-B radiation on the disease resistance of rice and the pathogenicity of M. oryzae was studied, and the effects of enhanced UV-B radiation on the interactions between rice and M. oryzae were analysed. The results indicated the following: (1) enhanced UV-B radiation significantly reduced the rice blast disease index, but as infection progressed, the inhibitory effect of UV-B radiation on the disease was weakened. (2) UV-B radiation treatment before infection with M. oryzae (UV-B + M.) significantly increased the activity of the enzymes related to disease resistance (phenylalanine ammonia lyase, lipoxygenase, chitinase, and β-1,3-glucanase), and the plants exhibited light-induced resistance. (3) Exposure to UV-B radiation after M. oryzae infection (M. + UV-B) did not induce disease course-related protein (PR) activity, but the content of soluble sugar increased. The osmotic stress caused by pathogenic fungi infection was alleviated by active accumulation of soluble sugar; due to this lack of nutrients, it was difficult for the rice blast fungus to grow. (4) Enhanced UV-B radiation significantly inhibited the production of conidia by M. oryzae, and the expression of the pathogenic genes Chitinase, MGP1, MAGB, and CPKA was significantly downregulated. The pathogenicity of M. oryzae was reduced by UV-B radiation. The resistance of rice leaves was weakened by simultaneous exposure to UV-B radiation and M. oryzae (UV-B/M.). Hence, UV-B radiation can weaken the infectivity of M. oryzae, improve the resistance of traditional rice, and contain the disease.

Influence of Light on Plant-Phyllosphere Interaction

Plant-phyllosphere interactions depend on microbial diversity, the plant host and environmental factors. Light is perceived by plants and by microorganisms and is used as a cue for their interaction. Photoreceptors respond to narrow-bandwidth wavelengths and activate specific internal responses. Light-induced plant responses include changes in hormonal levels, production of secondary metabolites, and release of volatile compounds, which ultimately influence plant-phyllosphere interactions. On the other hand, microorganisms contribute making some essential elements (N, P, and Fe) biologically available for plants and producing growth regulators that promote plant growth and fitness. Therefore, light directly or indirectly influences plant-microbe interactions. The usage of light-emitting diodes in plant growth facilities is helping increasing knowledge in the field. This progress will help define light recipes to optimize outputs on plant-phyllosphere communications. This review describes research advancements on light-regulated plant-phyllosphere interactions. The effects of full light spectra and narrow bandwidth-wavelengths from UV to far-red light are discussed.