Nonempirical Range-Separated Hybrid Functional with Spatially Dependent Screened Exchange

Electronic structure calculations based on density functional theory (DFT) have successfully predicted numerous ground-state properties of a variety of molecules and materials. However, exchange and correlation functionals currently used in the literature, including semilocal and hybrid functionals, are often inaccurate to describe the electronic properties of heterogeneous solids, especially systems composed of building blocks with large dielectric mismatch. Here, we present a dielectric-dependent range-separated hybrid functional, screened-exchange range-separated hybrid (SE-RSH), for the investigation of heterogeneous materials. We define a spatially dependent fraction of exact exchange inspired by the static Coulomb-hole and screened-exchange (COHSEX) approximation used in many-body perturbation theory, and we show that the proposed functional accurately predicts the electronic structure of several nonmetallic interfaces, three- and two-dimensional, pristine, and defective solids and nanoparticles.

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4)

Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is still unclear. Most prominently, the Si dangling bond or K-center has been identified as an amphoteric trap center. Nevertheless, experiments have shown that these dangling bonds only make up a small portion of the total density of electrical active defects, motivating the search for other charge trapping sites. Here, we use a machine-learned force field to create model structures of amorphous Si3N4 by simulating a melt-and-quench procedure with a molecular dynamics algorithm. Subsequently, we employ density functional theory in conjunction with a hybrid functional to investigate the structural properties and electronic states of our model structures. We show that electrons and holes can localize near over- and under-coordinated atoms, thereby introducing defect states in the band gap after structural relaxation. We analyze these trapping sites within a nonradiative multi-phonon model by calculating relaxation energies and thermodynamic charge transition levels. The resulting defect parameters are used to model the potential energy curves of the defect systems in different charge states and to extract the classical energy barrier for charge transfer. The high energy barriers for charge emission compared to the vanishing barriers for charge capture at the defect sites show that intrinsic electron traps can contribute to the memory effect in charge trap flash devices.

Electrical and thermal characterisation of liquid metal thin-film Ga[Formula: see text]O[Formula: see text]-SiO[Formula: see text] heterostructures

Heterostructures of Ga[Formula: see text]O[Formula: see text] with other materials such as Si, SiC or diamond, are a possible way of addressing the low thermal conductivity and lack of p-type doping of Ga[Formula: see text]O[Formula: see text] for device applications, as well as of improving device reliability. In this work we study the electrical and thermal properties of Ga[Formula: see text]O[Formula: see text]-SiO[Formula: see text] heterostructures. Here, thin-film gallium oxide with thickness ranging between 8 and 30 nm was deposited onto a silicon substrate with a thermal oxide by means of oxidised liquid gallium layer delamination. The resulting heterostructure is then characterised by means of X-ray photoelectron spectroscopy and transient thermoreflectance. The thin-film gallium oxide valence band offset with respect to the SiO[Formula: see text] is measured as 0.1 eV and predicted as [Formula: see text] eV with respect to diamond. The thin-film's out-of-plane thermal conductivity is determined to be 3 ±0.5 Wm[Formula: see text] K[Formula: see text], which is higher than what has been previously measured for other polycrystalline Ga[Formula: see text]O[Formula: see text] films of comparable thickness.

Local Modified Becke-Johnson Exchange-Correlation Potential for Interfaces, Surfaces, and Two-Dimensional Materials

The modified Becke-Johnson meta-GGA potential of density functional theory has been shown to be the best exchange-correlation potential to determine band gaps of crystalline solids. However, it cannot be consistently used for the electronic structure of nonperiodic or nanostructured systems. We propose an extension of this potential that enables its use to study heterogeneous, finite, and low-dimensional systems. This is achieved by using a coordinate-dependent expression for the parameter c that weights the Becke-Russel exchange, in contrast to the original global formulation, where c is just a fitted number. Our potential takes advantage of the excellent description of band gaps provided by the modified Becke-Johnson potential and preserves its modest computational effort. Furthermore, it yields with one single calculation band diagrams and band offsets of heterostructures and surfaces. We exemplify the usefulness and efficiency of our local meta-GGA potential by testing it for a series of interfaces (Si/SiO₂, AlAs/GaAs, AlP/GaP, and GaP/Si), a Si surface, and boron nitride monolayer.

Improving the efficiency of G0W0 calculations with approximate spectral decompositions of dielectric matrices

Recently, it was shown that the calculation of quasiparticle energies using the G₀W₀ approximation can be performed without computing explicitly any virtual electronic states, by expanding the Green function and screened Coulomb interaction in terms of the eigenstates of the static dielectric matrix. Avoiding the evaluation of virtual electronic states leads to improved efficiency and ease of convergence of G₀W₀ calculations. Here, we propose a further improvement of the efficiency of these calculations, based on an approximation of density-density response functions of molecules and solids. The approximation relies on the calculation of a subset of eigenvectors of the dielectric matrix using the kinetic operator instead of the full Hamiltonian, and it does not lead to any substantial loss of accuracy for the quasiparticle energies. The computational savings introduced by this approximation depend on the system, and they become more substantial as the number of electrons increases.

Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study

The crystalline-Si/amorphous-SiO₂ (c-Si/a-SiO₂) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO₂ interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containing Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO₂, was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO₂ interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO₂ and c-Si/a-SiO₂ interfaces, the band offset significantly deviates from the experimental values by about 1 eV.

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transport. High injected tunneling current densities approaching 10(3) A cm(-2) (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO2) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

STRUCTURES AND ELECTRONIC PROPERTIES OF FOUR CRYSTAL GeO2 AND TWO RARE-EARTH ELEMENT OXIDES La2O3 AND CeO2: FIRST PRINCIPLES CALCULATION

This paper presents a first principles calculation of the structure and electronic properties of four crystal GeO2 structures and two rare-earth element oxides CeO2 and La2O3 . A GGA was used to optimize structures and calculate band structure and density of states (DOS). It is found that La2O3 has the largest band gap (4.19 eV) among all the six structures, which also means it is the best insulator among them. When it comes to four crystal GeO2 structures, which were calculated to make a comparison with two insulators CeO2 and La2O3 , we found the q- GeO2 and b- GeO2 are more likely to work as the dielectrics used in MOS devices than the other two crystalline forms. Three of the four GeO2 forms have larger band gap than that of CeO2 (2.09 eV), which indicates CeO2 is not a wise choice when deposited directly on the surface of Ge substrate.

Stability and segregation of B and P dopants in Si/SiO2 core-shell nanowires

Using molecular dynamics simulations, we generate realistic atomic models for oxidized Si nanowires which consist of a crystalline Si core and an amorphous SiO(2) shell. The amorphous characteristics of SiO(2) are well reproduced, as compared to those for bulk amorphous silica. Based on first-principles density functional calculations, we investigate the stability and segregation of B and P dopants near the radial interface between Si and SiO(2). Although substitutional B atoms are more stable in the core than in the oxide, B dopants can segregate to the oxide with the aid of Si self-interstitials which are generated during thermal oxidation. The segregation of B dopants occurs in the form of B interstitials in the oxide, leaving the self-interstitials in the Si core. In the case of P dopants, dopant segregation to the oxide is unfavorable even in the presence of self-interstitials. Instead, we find that P dopants tend to aggregate in the Si region near the interface and may form nearest-neighbor donor pairs, which are energetically more stable than isolated P dopants.

Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations

Band offsets at semiconductor-oxide interfaces are determined through a scheme based on hybrid density functionals, which incorporate a fraction alpha of Hartree-Fock exchange. For each bulk component, the fraction alpha is tuned to reproduce the experimental band gap, and the conduction and valence band edges are then located with respect to a reference level. The lineup of the bulk reference levels is determined through an interface calculation, and shown to be almost independent of the fraction alpha. Application of this scheme to the Si-SiO2, SiC-SiO2, and Si-HfO2 interfaces yields excellent agreement with experiment.

Band offsets at the Si/SiO2 interface from many-body perturbation theory

We use many-body perturbation theory, the state-of-the-art method for band-gap calculations, to compute the band offsets at the Si/SiO2 interface. We examine the adequacy of the usual approximations in this context. We show that (i) the separate treatment of band structure and potential lineup contributions, the latter being evaluated within density-functional theory, is justified, (ii) most plasmon-pole models lead to inaccuracies in the absolute quasiparticle corrections, (iii) vertex corrections can be neglected, and (iv) eigenenergy self-consistency is adequate. Our theoretical offsets agree with the experimental ones within 0.3 eV.

Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO2Interface

Monolayer islands of pentacene deposited on silicon substrates with thermally grown oxides were studied by electric force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM) in ultrahigh vacuum (UHV) after prior 10 min exposure to atmospheric ambient. On 25-nm-thick oxides, the pentacene islands are 0.5 V higher in electrostatic potential than the silicon dioxide background because of intrinsic contact potential differences. On 2-nm-thin oxides, tunneling across the oxides allows Fermi level equilibration with pentacene associated states. The surface potential difference depends on the doping of the underlying Si substrates. The Fermi level movement at the pentacene SiO(2) interface was restricted and estimated to lie between 0.3 and 0.6 eV above the pentacene valence band maximum. It is proposed that hole traps in the pentacene or at the pentacene-oxide interface are responsible for the observations.