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Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy. ACTA ACUST UNITED AC 2001. [DOI: 10.1116/1.1330265] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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