Ultrafast dissolution and creation of bonds in IrTe2 induced by photodoping

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Ultrafast laser processing has emerged as a versatile technique for modifying materials and introducing novel functionalities. Over the past decade, this method has demonstrated remarkable advantages in the manipulation of 2D layered materials, including synthesis, structuring, functionalization, and local patterning. Unlike continuous-wave and long-pulsed optical methods, ultrafast lasers offer a solution for thermal heating issues. Nonlinear interactions between ultrafast laser pulses and the atomic lattice of 2D materials substantially influence their chemical and physical properties. This paper highlights the transformative role of ultrafast laser pulses in maskless green technology, enabling subtractive, and additive processes that unveil ways for advanced devices. Utilizing the synergetic effect between the energy states within the atomic layers and ultrafast laser irradiation, it is feasible to achieve unprecedented resolutions down to several nanometers. Recent advancements are discussed in functionalization, doping, atomic reconstruction, phase transformation, and 2D and 3D micro- and nanopatterning. A forward-looking perspective on a wide array of applications of 2D materials, along with device fabrication featuring novel physical and chemical properties through direct ultrafast laser writing, is also provided.

Photoinduced Nonvolatile Displacive Transformation and Optical Switching in MnTe Semiconductors

MnTe is considered a promising candidate for next-generation phase change materials owing to the reversible and nonvolatile phase transformation between its α and β' phases by irradiation of a nanosecond laser or application of a pulse voltage. In this work, for a faster phase control of MnTe, the response of metastable β-MnTe thin films to femtosecond (fs) laser irradiation was investigated. Using ultrafast optical spectroscopy, we inferred transient phase transformation. Moreover, with an increase in laser-excitation fluence, a nonvolatile structural change from the β to α phase was experimentally observed by Raman spectroscopy and transmission electron microscopy without ablation damage on the sample. The observation results strongly suggest that the fs-laser-induced β → α phase transformation proceeds through the nucleation and growth mode without a large temperature increase.

Inverse Design of Light Manipulating Structural Phase Transition in Solids

This Perspective focuses on recent advances in understanding ultrafast processes involved in photoinduced structural phase transitions and proposes a strategy for precise manipulation of such transitions. It has been demonstrated that photoexcited carriers occupying empty antibonding or bonding states generate atomic driving forces that lead to either stretching or shortening of associated bonds, which in turn induce collective and coherent motions of atoms and yield structural transitions. For instance, phase transitions in IrTe₂ and VO₂, and nonthermal melting in Si, can be explained by the occupation of specific local bonding or antibonding states during laser excitation. These cases reveal the electronic-orbital-selective nature of laser-induced structural transitions. Based on this understanding, we propose an inverse design protocol for achieving or preventing a target structural transition by controlling the related electron occupations with orbital-selective photoexcitation. Overall, this Perspective provides a comprehensive overview of recent advancements in dynamical structural control in solid materials.

Externally-triggerable optical pump-probe scanning tunneling microscopy with a time resoloution of tens-picosecond

Photoinduced carrier dynamics of nanostructures play a crucial role in developing novel functionalities in advanced materials. Optical pump-probe scanning tunneling microscopy (OPP-STM) represents distinctive capabilities of real-space imaging of such carrier dynamics with nanoscale spatial resolution. However, combining the advanced technology of ultrafast pulsed lasers with STM for stable time-resolved measurements has remained challenging. The recent OPP-STM system, whose laser-pulse timing is electrically controlled by external triggers, has significantly simplified this combination but limited its application due to nanosecond temporal resolution. Here we report an externally-triggerable OPP-STM system with a temporal resolution in the tens-picosecond range. We also realize the stable laser illumination of the tip-sample junction by placing a position-movable aspheric lens driven by piezo actuators directly on the STM stage and by employing an optical beam stabilization system. We demonstrate the OPP-STM measurements on GaAs(110) surfaces, observing carrier dynamics with a decay time of [Formula: see text] ps and revealing local carrier dynamics at features including a step edge and a nanoscale defect. The stable OPP-STM measurements with the tens-picosecond resolution by the electrical control of laser pulses highlight the potential capabilities of this system for investigating nanoscale carrier dynamics of a wide range of functional materials.

Traversing Double-Well Potential Energy Surfaces: Photoinduced Concurrent Intralayer and Interlayer Structural Transitions in XTe2 (X = Mo, W)

The microscopic arrangement of atoms and molecules is the determining factor in how materials behave and perform; i.e., the structure determines the property, a traditional paradigm in materials science. Photoexcitation-driven manipulation of the crystal structure and associated electronic properties in quantum materials provides opportunities for the exploration of exotic physics and practical applications; however, a generalized mechanism for such symmetry engineering is absent. Here, by ultrafast electron diffraction, structure factor calculation, and TDDFT-MD simulations, we report the photoinduced concurrent intralayer and interlayer structural transitions in the Td and 1T' phases of XTe₂ (X = Mo, W). We discuss the modification of multiple quantum electronic states associated with the intralayer and interlayer structural transitions, such as the topological band inversion and the higher-order topological state. The twin structures and the stacking faults in XTe₂ are also identified by ultrafast structural responses. The comprehensive study of the ultrafast structural response in XTe₂ suggests the traversal of all double-well potential energy surfaces (DWPES) by laser excitation, which is expected to be an intrinsic mechanism in the field of photoexcitation-driven global/local symmetry engineering and also a critical ingredient inducing the exotic properties in the non-equilibrium state in a large number of material systems.

Unifying the order and disorder dynamics in photoexcited VO2

Photoinduced phase transition (PIPT) is always treated as a coherent process, but ultrafast disordering in PIPT is observed in recent experiments. Utilizing the real-time time-dependent density functional theory method, here we track the motion of individual vanadium (V) ions during PIPT in VO₂ and uncover that their coherent or disordered dynamics can be manipulated by tuning the laser fluence. We find that the photoexcited holes generate a force on each V-V dimer to drive their collective coherent motion, in competing with the thermal-induced vibrations. If the laser fluence is so weak that the photoexcited hole density is too low to drive the phase transition alone, the PIPT is a disordered process due to the interference of thermal phonons. We also reveal that the photoexcited holes populated by the V-V dimerized bonding states will become saturated if the laser fluence is too strong, limiting the timescale of photoinduced phase transition.

Generation of sub-100 fs electron pulses for time-resolved electron diffraction using a direct synchronization method

To investigate photoinduced phenomena in various materials and molecules, ultrashort pulsed x-ray and electron sources with high brightness and high repetition rates are required. The x-ray and electron's typical and de Broglie wavelengths are shorter than lattice constants of materials and molecules. Therefore, photoinduced structural dynamics on the femtosecond to picosecond timescales can be directly observed in a diffraction manner by using these pulses. This research created a tabletop ultrashort pulsed electron diffraction setup that used a femtosecond laser and electron pulse compression cavity that was directly synchronized to the microwave master oscillator (∼3 GHz). A compressed electron pulse with a 1 kHz repetition rate contained 228 000 electrons. The electron pulse duration was estimated to be less than 100 fs at the sample position by using photoinduced immediate lattice changes in an ultrathin silicon film (50 nm). The newly developed time-resolved electron diffraction setup has a pulse duration that is comparable to femtosecond laser pulse widths (35-100 fs). The pulse duration, in particular, fits within the timescale of photoinduced phenomena in quantum materials. Our developed ultrafast time-resolved electron diffraction setup with a sub-100 fs temporal resolution would be a powerful tool in material science with a combination of optical pump-probe, time-resolved photoemission spectroscopic, and pulsed x-ray measurements.

Break of symmetry at the surface of IrTe2upon phase transition measured by x-ray photoelectron diffraction

IrTe₂undergoes a series of charge-ordered phase transitions below room temperature that are characterized by the formation of stripes of Ir dimers of different periodicities. Full hemispherical x-ray photoelectron diffraction (XPD) experiments have been performed to investigate the atomic position changes undergone near the surface of 1T-IrTe₂in the first-order phase transition, from the (1 × 1) phase to the (5 × 1) phase. Comparison between experiment and simulation allows us to identify the consequence of the dimerization on the Ir atoms local environment. We report that XPD permits to unveil the break of symmetry of IrTe₂trigonal to a monoclinic unit cell and confirm the occurrence of the (5 × 1) reconstruction within the first few layers below the surface with a staircase-like stacking of dimers.

Influence of Discrete Defects on Observed Acoustic-Phonon Dynamics in Layered Materials Probed with Ultrafast Electron Microscopy

The structural anisotropy of layered materials leads to disparate lattice responses along different crystallographic directions following femtosecond photoexcitation. Ultrafast scattering methods are well-suited to resolving such responses, though probe size and specimen structure and morphology must be considered when interpreting results. Here we use ultrafast electron microscopy (UEM) imaging and diffraction to study the influence of individual multilayer terraces and few-layer step-edges on acoustic-phonon dynamics in 1T-TaS₂ and 2H-MoS₂. In TaS₂, we find that a multilayer terrace produces distinct, localized responses arising from thickness-dependent c-axis phonon dynamics. Convolution of the responses is demonstrated with ultrafast selected-area diffraction by limiting the probe size and training it on the region of interest. This results in a reciprocal-space frequency response that is a convolution of the spatially separated behaviors. Sensitivity of phonon dynamics to few-layer step-edges in MoS₂ and the capability of UEM imaging to resolve the influence of such defects are also demonstrated. Spatial frequency maps from the UEM image series reveal regions separated by a four-layer step-edge having 60.0 GHz and 63.3 GHz oscillation frequencies, again linked to c-axis phonon propagation. As with ultrafast diffraction, signal convolution is demonstrated by continuous increase of the size of the selected region of interest used in the analysis.