Detection of thermodynamic "valley noise" in monolayer semiconductors: Access to intrinsic valley relaxation time scales

Ab Initio Predictions of Spin Relaxation, Dephasing, and Diffusion in Solids

Spin relaxation, dephasing, and diffusion are at the heart of spin-based information technology. Accurate theoretical approaches to simulate spin lifetimes (τs), determining how fast the spin polarization and phase information will be lost, are important to the understanding of the underlying mechanism of these spin processes, and invaluable in searching for promising candidates of spintronic materials. Recently, we develop a first-principles real-time density-matrix (FPDM) approach to simulate spin dynamics for general solid-state systems. Through the complete first-principles descriptions of light-matter interaction and scattering processes including electron-phonon, electron-impurity, and electron-electron scatterings with self-consistent spin-orbit coupling, as well as ab initio Landé g-factor, our method can predict τs at various conditions as a function of carrier density and temperature, under electric and magnetic fields. By employing this method, we successfully reproduce experimental results of disparate materials and identify the key factors affecting spin relaxation, dephasing, and diffusion in different materials. Specifically, we predict that germanene has long τs (∼100 ns at 50 K), a giant spin lifetime anisotropy, and spin-valley locking effect under electric fields, making it advantageous for spin-valleytronic applications. Based on our theoretical derivations and ab initio simulations, we propose a new useful electronic quantity, named spin-flip angle θ↑↓, for the understanding of spin relaxation through intervalley spin-flip scattering processes. Our method can be further applied to other emerging materials and extended to simulate exciton spin dynamics and steady-state photocurrents due to photogalvanic effect.

Predicting Phonon-Induced Spin Decoherence from First Principles: Colossal Spin Renormalization in Condensed Matter

Developing a microscopic understanding of spin decoherence is essential to advancing quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays a special role as it sets an intrinsic limit to the performance of spin-based quantum devices. Two main sources of phonon-induced spin decoherence-the Elliott-Yafet and Dyakonov-Perel mechanisms-have distinct physical origins and theoretical treatments. Here, we show calculations that unify their modeling and enable accurate predictions of spin relaxation and precession in semiconductors. We compute the phonon-dressed vertex of the spin-spin correlation function with a treatment analogous to the calculation of the anomalous electron magnetic moment in QED. We find that the vertex correction provides a giant renormalization of the electron spin dynamics in solids, greater by many orders of magnitude than the corresponding correction from photons in vacuum. Our Letter demonstrates a general approach for quantitative analysis of spin decoherence in materials, advancing the quest for spin-based quantum technologies.

Spin-Valley Relaxation and Exciton-Induced Depolarization Dynamics of Landau-Quantized Electrons in MoSe_{2} Monolayer

Nonequilibrium dynamics of strongly correlated systems constitutes a fascinating problem of condensed matter physics with many open questions. Here, we investigate the relaxation dynamics of Landau-quantized electron system into spin-valley polarized ground state in a gate-tunable MoSe_{2} monolayer subjected to a strong magnetic field. The system is driven out of equilibrium with optically injected excitons that depolarize the electron spins and the subsequent electron spin-valley relaxation is probed in time-resolved experiments. We demonstrate that both the relaxation and light-induced depolarization rates at millikelvin temperatures sensitively depend on the Landau level filling factor: the relaxation is enhanced whenever the electrons form an integer quantum Hall liquid and slows down appreciably at noninteger fillings, while the depolarization rate exhibits an opposite behavior. Our findings suggest that spin-valley dynamics may be used as a tool to investigate the interplay between the effects of disorder and strong interactions in the electronic ground state.

Spin/valley pumping of resident electrons in WSe2 and WS2 monolayers

Monolayers of transition metal dichalcogenides are ideal materials to control both spin and valley degrees of freedom either electrically or optically. Nevertheless, optical excitation mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here we demonstrate a very efficient spin/valley optical pumping of resident electrons in n-doped WSe2 and WS2 monolayers. We observe that, using a continuous wave laser and appropriate doping and excitation densities, negative trion doublet lines exhibit circular polarization of opposite sign and the photoluminescence intensity of the triplet trion is more than four times larger with circular excitation than with linear excitation. We interpret our results as a consequence of a large dynamic polarization of resident electrons using circular light.

Raman scattering model of the spin noise

The mechanism of formation of the polarimetric signal observed in the spin noise spectroscopy (SNS) is analyzed from the viewpoint of the light scattering theory. A rigorous calculation of the polarimetric signal (Faraday rotation or ellipticity) recorded in the SNS is presented in the approximation of single scattering. We show that it is most correctly to consider this noise as a result of scattering of the probe light beam by fluctuating susceptibility of the medium. Fluctuations of the gyrotropic (antisymmetric) part of the susceptibility tensor lead to appearance of the typical for the SNS Faraday rotation noise at the Larmor frequency. At the same time, fluctuations of linear anisotropy of the medium (symmetric part of the susceptibility tensor) give rise to the ellipticity noise of the probe beam spectrally localized at the double Larmor frequency. The results of the theoretical analysis well agree with the experimental data on the ellipticity noise in cesium vapor.

Unveiling Valley Lifetimes of Free Charge Carriers in Monolayer WSe2

We report on nanosecond-long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe₂, unambiguously identified by the combination of time-resolved Kerr rotation and electrical transport measurements. While the valley polarization increases when tuning the Fermi level into the conduction or valence band, there is a strong decrease of the respective valley lifetime consistent with both electron-phonon and spin-orbit scattering. The longest lifetimes are seen for spin-polarized bound excitons in the band gap region. We explain our findings via two distinct, Fermi-level-dependent scattering channels of optically excited, valley-polarized bright trions either via dark or bound states. By electrostatic gating we demonstrate that the transition-metal dichalcogenide WSe₂ can be tuned to be either an ideal host for long-lived localized spin states or allow for nanosecond valley lifetimes of free charge carriers (>10 ns).

Spin States Protected from Intrinsic Electron-Phonon Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe2

We present time-resolved Kerr rotation measurements, showing spin lifetimes of over 100 ns at room temperature in monolayer MoSe₂. These long lifetimes are accompanied by an intriguing temperature-dependence of the Kerr amplitude, which increases with temperature up to 50 K and then abruptly switches sign. Using ab initio simulations, we explain the latter behavior in terms of the intrinsic electron-phonon coupling and the activation of transitions to secondary valleys. The phonon-assisted scattering of the photoexcited electron-hole pairs prepares a valley spin polarization within the first few ps after laser excitation. The sign of the total valley magnetization, and thus the Kerr amplitude, switches as a function of temperature, as conduction and valence band states exhibit different phonon-mediated intervalley scattering rates. However, the electron-phonon scattering on the ps time scale does not provide an explanation for the long spin lifetimes. Hence, we deduce that the initial spin polarization must be transferred into spin states, which are protected from the intrinsic electron-phonon coupling, and are most likely resident charge carriers, which are not part of the itinerant valence or conduction band states.