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Kim JK, Kim H, Kwon J, Kim HWJ, Kim K, Ha SH, Kim J, Kim HS, Kim J, Noh G, Kim GY, Choi SY, Park J, Eom I, Jang D, Chun SH, Said A, Huang X, Kim J, Kim BJ. Liquid-like spin dynamics in a hybrid Heisenberg-Ising antiferromagnet. Nat Commun 2025; 16:1547. [PMID: 39934139 DOI: 10.1038/s41467-025-56635-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Accepted: 01/23/2025] [Indexed: 02/13/2025] Open
Abstract
Two-dimensional (2D) materials and their heterostructures enable unconventional electronic properties and functionalities not accessible in their bulk counterparts. This approach is now being extended to magnetic materials to engineer their spin structures and magnetic fields produced by them. However, spin dynamics of 2D magnetic heterostructures remain largely unexplored. Here, we demonstrate that heterointerfacing Heisenberg square-lattice antiferromagnet (AF) Sr2IrO4 with its bilayer variant Ising AF Sr3Ir2O7 in a superlattice leads to liquid-like spin dynamics in the former, characterized by slow recovery of the AF order after its transient suppression by an optical pump, and complete absence of spin waves except in an immediate vicinity of the ordering wavevector. Instead, the spin excitation spectra are dominated by isotropic continua, which in previous works have been interpreted as fractional spin excitations, or spinons, that extends to unprecedentedly low energies. Thus, our results provide a pathway to frustrated magnetism in square lattices by heterointerfacing two distinct types of AFs.
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Affiliation(s)
- Jin-Kwang Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Hoon Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Junyoung Kwon
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Hyun-Woo J Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Kwangrae Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Seung-Hyeok Ha
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Jaehwon Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Hyun-Sung Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Jimin Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea
| | - Gahee Noh
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea
| | - Jaeku Park
- Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk, South Korea
| | - Intae Eom
- Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk, South Korea
| | - Dogeun Jang
- Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk, South Korea
| | - Sae Hwan Chun
- Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk, South Korea
| | - Ayman Said
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - XianRong Huang
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - Jungho Kim
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA
| | - B J Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, South Korea.
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, South Korea.
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Fuentes V, Balcells L, Konstantinović Z, Martínez B, Pomar A. Evaluation of Sputtering Processes in Strontium Iridate Thin Films. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:242. [PMID: 38334512 PMCID: PMC10856326 DOI: 10.3390/nano14030242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2023] [Revised: 01/19/2024] [Accepted: 01/20/2024] [Indexed: 02/10/2024]
Abstract
The growth of epitaxial thin films from the Ruddlesden-Popper series of strontium iridates by magnetron sputtering is analyzed. It was found that, even using a non-stoichiometric target, the films formed under various conditions were consistently of the perovskite-like n = ∞ SrIrO3 phase, with no evidence of other RP series phases. A detailed inspection of the temperature-oxygen phase diagram underscored that kinetics mechanisms prevail over thermodynamics considerations. The analysis of the angular distribution of sputtered iridium and strontium species indicated clearly different spatial distribution patterns. Additionally, significant backsputtering was detected at elevated temperatures. Thus, it is assumed that the interplay between these two kinetic phenomena is at the origin of the preferential nucleation of the SrIrO3 phase. In addition, strategies for controlling cation stoichiometry off-axis have also been explored. Finally, the long-term stability of the films has been demonstrated.
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Affiliation(s)
- Víctor Fuentes
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Lluis Balcells
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Zorica Konstantinović
- Center for Solid State Physics and New Materials, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
| | - Benjamín Martínez
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
| | - Alberto Pomar
- Instituto de Ciencia de Materiales de Barcelona, ICMAB-CSIC, Campus Universitario UAB, 08193 Bellaterra, Spain; (V.F.); (L.B.); (B.M.)
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Nair S, Yang Z, Lee D, Guo S, Sadowski JT, Johnson S, Saboor A, Li Y, Zhou H, Comes RB, Jin W, Mkhoyan KA, Janotti A, Jalan B. Engineering metal oxidation using epitaxial strain. NATURE NANOTECHNOLOGY 2023; 18:1005-1011. [PMID: 37217765 DOI: 10.1038/s41565-023-01397-0] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 04/13/2023] [Indexed: 05/24/2023]
Abstract
The oxides of platinum group metals are promising for future electronics and spintronics due to the delicate interplay of spin-orbit coupling and electron correlation energies. However, their synthesis as thin films remains challenging due to their low vapour pressures and low oxidation potentials. Here we show how epitaxial strain can be used as a control knob to enhance metal oxidation. Using Ir as an example, we demonstrate the use of epitaxial strain in engineering its oxidation chemistry, enabling phase-pure Ir or IrO2 films despite using identical growth conditions. The observations are explained using a density-functional-theory-based modified formation enthalpy framework, which highlights the important role of metal-substrate epitaxial strain in governing the oxide formation enthalpy. We also validate the generality of this principle by demonstrating epitaxial strain effect on Ru oxidation. The IrO2 films studied in our work further revealed quantum oscillations, attesting to the excellent film quality. The epitaxial strain approach we present could enable growth of oxide films of hard-to-oxidize elements using strain engineering.
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Affiliation(s)
- Sreejith Nair
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA.
| | - Zhifei Yang
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, USA
| | - Dooyong Lee
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
| | - Silu Guo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
| | - Jerzy T Sadowski
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA
| | | | - Abdul Saboor
- Department of Materials Science and Engineering, University of Delaware, Newark, DE, USA
| | - Yan Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, USA
| | - Ryan B Comes
- Department of Physics, Auburn University, Auburn, AL, USA
| | - Wencan Jin
- Department of Physics, Auburn University, Auburn, AL, USA
| | - K Andre Mkhoyan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
| | - Anderson Janotti
- Department of Materials Science and Engineering, University of Delaware, Newark, DE, USA
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA.
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Hao L, Yi D, Wang M, Liu J, Yu P. Emergent quantum phenomena in atomically engineered iridate heterostructures. FUNDAMENTAL RESEARCH 2023; 3:313-321. [PMID: 38933764 PMCID: PMC11197666 DOI: 10.1016/j.fmre.2022.09.030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Revised: 09/22/2022] [Accepted: 09/25/2022] [Indexed: 11/06/2022] Open
Abstract
Over the last few years, researches in iridates have developed into an exciting field with the discovery of numerous emergent phenomena, interesting physics, and intriguing functionalities. Among the studies, iridate-based artificial structures play a crucial role owing to their extreme flexibility and tunability in lattice symmetry, chemical composition, and crystal dimensionality. In this article, we present an overview of the recent progress regarding iridate-based artificial structures. We first explicitly introduce several essential concepts in iridates. Then, we illustrate important findings on representative SrIrO3/SrTiO3 superlattices, heterostructures comprised of SrIrO3 and magnetic oxides, and their response to external electric-field stimuli. Finally, we comment on existing problems and promising future directions in this exciting field.
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Affiliation(s)
- Lin Hao
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Di Yi
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Meng Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Jian Liu
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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Kim JR, Sohn B, Lee HJ, Lee S, Ko EK, Hahn S, Lee S, Kim Y, Kim D, Kim HJ, Kim Y, Son J, Ahn CH, Walker FJ, Go A, Kim M, Kim CH, Kim C, Noh TW. Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single-Atomic-Layer Ruthenates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208833. [PMID: 36739615 DOI: 10.1002/adma.202208833] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Revised: 01/08/2023] [Indexed: 06/18/2023]
Abstract
Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO3 is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO3 . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.
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Affiliation(s)
- Jeong Rae Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Byungmin Sohn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
| | - Hyeong Jun Lee
- Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon, 34126, South Korea
| | - Sangmin Lee
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, South Korea
| | - Eun Kyo Ko
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Sungsoo Hahn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Sangjae Lee
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
| | - Younsik Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Donghan Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Hong Joon Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Youngdo Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Jaeseok Son
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Charles H Ahn
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
- Department of Physics, Yale University, New Haven, CT, 06520, USA
| | - Frederick J Walker
- Department of Applied Physics, Yale University, New Haven, CT, 06520, USA
| | - Ara Go
- Department of Physics, Chonnam National University, Gwangju, 61186, South Korea
| | - Miyoung Kim
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, South Korea
| | - Choong H Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
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Kim D, Kim Y, Sohn B, Kim M, Kim B, Noh TW, Kim C. Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207188. [PMID: 36764325 DOI: 10.1002/adma.202207188] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Revised: 01/02/2023] [Indexed: 05/17/2023]
Abstract
Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) lead to divergent DOS in 2D systems. Despite recent interest in VHSs, only a few controllable cases have been reported to date. In this work, by utilizing an atomically ultra-thin SrRuO3 film, the electronic structure of a 2D VHS is investigated with angle-resolved photoemission spectroscopy and transport properties are controlled. By applying electric fields with alkali metal deposition and ionic-liquid gating methods, the 2D VHS and the sign of the charge carrier are precisely controlled. Use of a tunable 2D VHS in an atomically flat oxide film could serve as a new strategy to realize infinite DOS near the Fermi level, thereby allowing efficient tuning of electric properties.
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Affiliation(s)
- Donghan Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Younsik Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Byungmin Sohn
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Minsoo Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Bongju Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
| | - Changyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, South Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea
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