Strained-layer epitaxy of germanium-silicon alloys

Epitaxial Electrodeposition of Ordered Inorganic Materials

ConspectusThe quality of technological materials generally improves as the crystallographic order is increased. This is particularly true in semiconductor materials, as evidenced by the huge impact that bulk single crystals of silicon have had on electronics. Another approach to producing highly ordered materials is the epitaxial growth of crystals on a single-crystal surface that determines their orientation. Epitaxy can be used to produce films and nanostructures of materials with a level of perfection that approaches that of single crystals. It may be used to produce materials that cannot be grown as large single crystals due to either economic or technical constraints. Epitaxial growth is typically limited to ultrahigh vacuum (UHV) techniques such as molecular beam epitaxy and other vapor deposition methods. In this Account, we will discuss the use of electrodeposition to produce epitaxial films of inorganic materials in aqueous solution under ambient conditions. In addition to lower capital costs than UHV deposition, electrodeposition offers additional levels of control due to solution additives that may adsorb on the surface, solution pH, and, especially, the applied overpotential. We show, for instance, that chiral morphologies of the achiral materials CuO and calcite can be produced by electrodepositing the materials in the presence of chiral agents such as tartaric acid.Inorganic compound materials are electrodeposited by an electrochemical-chemical mechanism in which solution precursors are electrochemically oxidized or reduced in the presence of molecules or ions that react with the redox product to form an insoluble species that deposits on the electrode surface. We present examples of reaction schemes for the electrodeposition of transparent hole conductors such as CuI and CuSCN, the magnetic material Fe₃O₄, oxygen evolution catalysts such as Co(OH)₂, CoOOH, and Co₃O₄, and the n-type semiconducting oxide ZnO. These materials can all be electrodeposited as epitaxial films or nanostructures onto single-crystal surfaces. Examples of epitaxial growth are given for the growth of films of CuI(111) on Si(111) and nanowires of CuSCN(001) on Au(111). Both are large mismatch systems, and the epitaxy is explained by invoking coincidence site lattices in which x unit meshes of the film overlap with y unit meshes of the substrate.We also discuss the epitaxial lift-off of single-crystal-like foils of metals such as Au(111) and Cu(100) that can be used as flexible substrates for the epitaxial growth of semiconductors. The metals are grown on a Si wafer with a sacrificial SiO_x interlayer that can be removed by chemical etching. The goal is to move beyond the planar structure of conventional Si-based chips to produce flexible electronic devices such as wearable solar cells, sensors, and flexible displays. A scheme is shown for the epitaxial lift-off of wafer-scale foils of the transparent hole conductor CuSCN.Finally, we offer some perspectives on possible future work in this area. One question we have not answered in our previous work is whether these epitaxial films and nanostructures can be grown with the level of perfection that is achieved in UHV. Another area that is ripe for exploration is the epitaxial electrodeposition of metal-organic framework materials from solution precursors.

Thermal transport in epitaxial Si1-x Ge x alloy nanowires with varying composition and morphology

We report on structural, compositional, and thermal characterization of self-assembled in-plane epitaxial Si_1-x Ge _x alloy nanowires grown by molecular beam epitaxy on Si (001) substrates. The thermal properties were studied by means of scanning thermal microscopy (SThM), while the microstructural characteristics, the spatial distribution of the elemental composition of the alloy nanowires and the sample surface were investigated by transmission electron microscopy and energy dispersive x-ray microanalysis. We provide new insights regarding the morphology of the in-plane nanostructures, their size-dependent gradient chemical composition, and the formation of a 5 nm thick wetting layer on the Si substrate surface. In addition, we directly probe heat transfer between a heated scanning probe sensor and Si_1-x Ge _x alloy nanowires of different morphological characteristics and we quantify their thermal resistance variations. We correlate the variations of the thermal signal to the dependence of the heat spreading with the cross-sectional geometry of the nanowires using finite element method simulations. With this method we determine the thermal conductivity of the nanowires with values in the range of 2-3 W m^-1 K^-1. These results provide valuable information in growth processes and show the great capability of the SThM technique in ambient environment for nanoscale thermal studies, otherwise not possible using conventional techniques.

Simultaneous determination of tensile and shear strains of crystalline bilayers using three Bragg reflections of X-rays

A method for the simultaneous determination of nine strain coefficients, both shear and tensile, of crystalline bilayers is proposed and realized. The X-ray diffraction peak intensities along 2θ (vertical) and β (horizontal) scans relative to the plane of incidence of three Bragg reflections whose atomic planes are not parallel to each other can be used to obtain shear and tensile strain coefficients. The theoretical considerations and experimental examples for single-crystal GeSi/Si overlayers are reported. It is also demonstrated that, for GeSi/Si, the shear and tensile strain coefficients of the Si substrate tend to vanish when the GeSi layer is thicker than 40 nm.

Depth profiles of the interfacial strains of Si0.7Ge0.3/Si using three-beam Bragg-surface diffraction

Interfacial strains are important factors affecting the structural and physical properties of crystalline multilayers and heterojunctions, and the performance of the devices made of multilayers used, for example, in nanowires, optoelectronic components, and many other applications. Currently existing strain measurement methods, such as grazing incidence X-ray diffraction (GIXD), cross-section transmission electron microscope, TEM, and coherent diffractive imaging, CDI, are limited by either the nanometer spatial resolution, penetration depth, or a destructive nature. Here we report a new non-destructive method of direct mapping the interfacial strain of [001] Si_0.7Ge_0.3/Si along the depth up to ~287 nm below the interface using three-beam Bragg-surface X-ray diffraction (BSD), where one wide-angle symmetric Bragg reflection and a surface reflection are simultaneously involved. Our method combining with the dynamical diffraction theory simulation can uniquely provide unit cell dimensions layer by layer, and is applicable to thicker samples.

Realization of a Strained Atomic Wire Superlattice

A superlattice of strained Au-Si atomic wires is successfully fabricated on a Si surface. Au atoms are known to incorporate into the stepped Si(111) surface to form a Au-Si atomic wire array with both one-dimensional (1D) metallic and antiferromagnetic atomic chains. At a reduced density of Au, we find a regular array of Au-Si wires in alternation with pristine Si nanoterraces. Pristine Si nanoterraces impose a strain on the neighboring Au-Si wires, which modifies both the band structure of metallic chains and the magnetic property of spin chains. This is an ultimate 1D version of a strained-layer superlattice of semiconductors, defining a direction toward the fine engineering of self-assembled atomic-scale wires.

Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

The formation of abrupt Si/Ge heterointerfaces in nanowires presents useful possibilities for bandgap engineering. We grow Si nanowires containing thick Ge layers and sub-1 nm thick Ge "quantum wells" and measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial compressive strains of several percent, while stress at the Si/Ge interface causes lattice rotation. High strains can be achieved in these heterostructures, but we show that they are unstable to interdiffusion.

High performance mechanisms of near-infrared photodetectors with microcrystalline SiGe films deposited using laser-assisted plasma enhanced chemical vapor deposition system

The SiH(4) and GeH(4) reactant gases used for depositing microcrystalline SiGe films could be simultaneously decomposed when acted cooperatively on the plasma and the assistant CO(2) laser in the laser-assisted plasma enhanced chemical vapor deposition system. The carrier mobility of the 80 W laser-assisted SiGe films was significantly increased to 66.8 cm(2)/V-s compared with 2.22 cm(2)/V-s of the non-laser-assisted SiGe films. The performances of the resulting p-Si/i-SiGe/n-Si near-infrared photodetectors were improved due to the high quality and high carrier mobility of the laser-assisted SiGe films. The maximum photoresponsivity and the maximum quantum efficiency of the photodetectors with 80 W laser-assisted SiGe films were respectively improved to 0.47 A/W and 68.5% in comparison with 0.31 A/W and 46.5% of the photodetectors with non-laser-assisted SiGe films.

One-step Ge/Si epitaxial growth

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Band-gap engineering: from physics and materials to new semiconductor devices

Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made. The transport properties of electrons and holes can be independently and continuously tuned for a given application. A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant tunneling transistors, is emerging from this approach.

The next generation of personal computers

Surprisingly affordable workstations with powerful graphics and computational capabilities will be on the desks of students and professionals within the next 2 years. Leading computer manufacturers and universities are creating a UNIX-based systems software regime that allows for portable applications software that can run on a wide range of workstations and that exploits emerging technologies.

Full tunability of strain along the fcc-bcc bain path in epitaxial films and consequences for magnetic properties

Strained coherent film growth is commonly either limited to ultrathin films or low strains. Here, we present an approach to achieve high strains in thicker films, by using materials with inherent structural instabilities. As an example, 50 nm thick epitaxial films of the Fe70Pd30 magnetic shape memory alloy are examined. Strained coherent growth on various substrates allows us to adjust the tetragonal distortion from c/a{bct}=1.09 to 1.39, covering most of the Bain transformation path from fcc to bcc crystal structure. Magnetometry and x-ray circular dichroism measurements show that the Curie temperature, orbital magnetic moment, and magnetocrystalline anisotropy change over broad ranges.

Atomistic studies of strain relaxation in heteroepitaxial systems

We present a review of recent theoretical studies of different atomistic mechanisms of strain relaxation in heteroepitaxial systems. We explore these systems in two and three dimensions using different semi-empirical interatomic potentials of Lennard-Jones and many-body embedded atom model type. In all cases we use a universal molecular static method for generating minimum energy paths for transitions from the coherent epitaxial (defect free) state to the state containing an isolated defect (localized or extended). This is followed by a systematic search for the minimum energy configuration as well as self-organization in the case of a periodic array of islands. In this way we are able to understand many general features of the atomic mechanisms and energetics of strain relaxation in these systems. Finally, for the special case of Pd/Cu(100) and Cu/Pd(100) heteroepitaxy we also use conventional molecular dynamics simulation techniques to compare the compressively and tensilely strained cases. The results for this case are in good agreement with the existing experimental data.

Strain-driven electronic band structure modulation of si nanowires

One of the major challenges toward Si nanowire (SiNW) based photonic devices is controlling the electronic band structure of the Si nanowire to obtain a direct band gap. Here, we present a new strategy for controlling the electronic band structure of Si nanowires. Our method is attributed to the band structure modulation driven by uniaxial strain. We show that the band structure modulation with lattice strain is strongly dependent on the crystal orientation and diameter of SiNWs. In the case of [100] and [111] SiNWs, tensile strain enhances the direct band gap characteristic, whereas compressive strain attenuates it. [110] SiNWs have a different strain dependence in that both compressive and tensile strain make SiNWs exhibit an indirect band gap. We discuss the origin of this strain dependence based on the band features of bulk silicon and the wave functions of SiNWs. These results could be helpful for band structure engineering and analysis of SiNWs in nanoscale devices.

Internal stress in a model elastoplastic fluid

Plastic materials can carry memory of past mechanical treatment in the form of internal stress. We introduce a natural definition of the vorticity of internal stress in a simple two-dimensional model of elastoplastic fluids, which generates the internal stress. We demonstrate how the internal stress is induced under external loading, and how the presence of the internal stress modifies the plastic behavior.

Carcinogenesis as the result of the deficiency of some essential trace elements

"Energetic" biological trace elements [gallium (III), germanium (IV), silicon (silica), arsenic (V) and selenium (IV)] occurring in DNA of eukaryotic cells may improve the semiconductor properties of DNA and may influence the mechanisms that control genetic expression at the electronic level. Their roles are postulated as follows: (i) to maintain the level and direction of free sliding electrons in DNA, (ii) to modulate the electron conductivity and hole conductivity of DNA. This specific electronic nature of DNA take the form of magnetic pigeonholes in which an electric pulse is (0), or is not (1) stored as an area of local magnetisation. These types of conductivity occurring in different parts of DNA of different cells could participate in the switch on and switch off of genetic information in gene expression. This model may help to elucidate the mechanism of action of these naturally occurring antitumor agents and may help in understanding the role of trace elements in charge transport of DNA and in carcinogenesis.

Artificially Structured Thin-Film Materials and Interfaces

The ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as molecular beam epitaxy and metal-organic chemical vapor deposition has recently led to the observation of unexpected new physical phenomena and to the creation of entirely new classes of devices. In particular, the growth of materials of variable band gap in technologically important semiconductors such as GaAs, InP, and silicon will be reviewed. Recent results of studies of multilayered structures and interfaces based on the use of advanced characterization techniques such as high-resolution transmission electron microscopy and scanning tunneling microscopy will be presented.