Structural and Electronic Role of Lead in (PbBi) 2 Sr 2 CaCu 2 O 8 Superconductors by STM

A Scanning Tunneling Microscopy Study of the Reduced Tio2(110)Surface

The scanning tunneling microscope has been used to image a reduced TiO2(110) surface in ultrahigh vacuum. Structural units with periodicities ranging from 21Å to 3.4Å have been clearly imaged and the observed surface structures can be explained by a model involving ordered arrangements of two dimensional defects known as crystallographic shear planes. An electronic state 0.5 eV below the conduction band edge, detected in tunneling spectra, has been assigned to reduced Ti cations which reside along the crystallographic shear planes. This state appears to be empty at the surface, possibly due to asmall amount of band bending. The results indicate that the topography of nonstoichiometric oxide surfaces can be rather complex and that the tunneling microscope provides an effective tool for studying the tomic scale surface features of wide band gap semiconductors.

Atomic-Scale Images of the Growth Surface of Ca 1– x Sr x CuO 2 Thin Films

The surface microstructure of c-axis (Ca,Sr)CuO(2) thin films, grown by laser molecular beam epitaxy on SrTiO(3)(001) substrates, was studied by ultrahigh-vacuum scanning tunneling microscopy (STM). Images were obtained for codeposited Ca1-xSrxCuO(2) thin films, which show a layered-type growth mode. The surfaces consist of atomically flat terraces separated by steps that are one unit cell high. A pronounced dependence of the growth mechanism on the Sr/Ca ratio of the films was observed. Atomic resolution STM images of the CuO(2) sheets in the ab plane show a square lattice with an in-plane spacing of 4 angstroms; the lattice contains different concentrations of point defects, depending on the polarity of the sample-tip bias.

Scanning Tunneling Microscopy of Electrodeposited Ceramic Superlattices

Cleaved cross sections of nanometer-scale ceramic superlattices fabricated from materials of the lead-thallium-oxygen system were imaged in the scanning tunneling microscope (STM). The apparent height differences between the layers were attributed to composition-dependent variations in local electrical properties. For a typical superlattice, the measured modulation wavelength was 10.6 nanometers by STM and 10.8 nanometers by x-ray diffraction. The apparent height profile for potentiostatically deposited superlattices was more square than that for galvanostatically deposited samples. These results suggest that the composition follows the applied potential more closely than it follows the applied current. The x-ray diffraction pattern of a superlattice produced under potential control had satellites out to the fourth order around the (420) Bragg reflection.

Structure of the Reduced TiO2(110) Surface Determined by Scanning Tunneling Microscopy

The scanning tunneling microscope has been used to image a reduced TiO(2)(110) surface in ultrahigh vacuum. Structural units with periodicities rangng from 21 to 3.4 angstroms have been clearly imaged, demonstrating that atomic resolution imaging of an ionic, wide band gap (3.2 electron volts) semiconductor is possible. The observed surface structures can be explained by a model involving ordered arrangements of two-dimensional defects known as crystallographic shear planes and indicate that the topography of nonstoichiometric oxide surfaces can be complex.

Enhancement of the critical current density in single-crystal Bi2Sr2CaCu2O8 superconductors by chemically induced disorder

The effect of metal substitution on the critical current densities of single-crystal PbxBi2-xSr2CaCu2O8 (x = 0 or x = 0.7) superconductors has been investigated. Substitution of lead was found to increase the average critical current density from 1 x 10(5) A/cm2 to 2 x 10(6) A/cm2 at 5 K in an applied magnetic field of 10 kilooersteds (1 oersted = 80 A/m). The order of magnitude increase in the critical current density was observed for temperatures up to the flux vortex lattice melting point; the flux lattice melting point was also found to increase to 30 K (from 22 K) in the lead-substituted materials. Diffraction and microscopy investigations of the structural parameters indicate that the fundamental atomic lattices are virtually the same for both materials. Scanning tunneling microscopy images demonstrate, however, that lead substitution causes significant disorder (or defects) in the one-dimensional superstructure found in Bi2Sr2CaCu2O8. Since crystal defects can increase the critical current density by pinning the motion of flux vortices, it is likely that this lead-induced disorder enhances vortex pinning. The lead-induced disorder is specific to the nonsuperconducting Bi-O layers, and thus our results suggest that chemical substitutions may be utilized to control selectively flux pinning and the critical current density in these materials.