Quantum hall ferromagnetism in a two-dimensional electron system

Electrical transport measurements of thin film samples under high hydrostatic pressure

We present a method to perform electrical measurements of epitaxial films and heterostructures a few nanometers thick under high hydrostatic pressures in a diamond anvil cell (DAC). Hydrostatic pressure offers the possibility to tune the rich landscape of properties shown by epitaxial heterostructures, systems in which the combination of different materials, performed with atomic precision, can give rise to properties not present in their individual constituents. Measuring electrical conductivity under hydrostatic pressure in these systems requires a robust method that can address all the challenges: the preparation of the sample with side length and thickness that fits in the DAC setup, a contacting method compatible with liquid media, a gasket insulation that resists high forces, as well as an accurate procedure to place the sample in the pressure chamber. We prove the robustness of the method described by measuring the resistance of a two dimensional electron system buried at the interface between two insulating oxides under hydrostatic conditions up to ∼5 GPa. The setup remains intact until ∼10 GPa, where large pressure gradients affect the two dimensional conductivity.

Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ∼500,000 cm²V⁻¹s⁻¹ in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree–Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

Few-layered graphene offers a powerful platform to investigate electronic interactions beyond the non-interacting electron picture approximation. Here, the authors report the signature of strong electronic interactions and quantum Hall ferromagnetism in trilayer graphene with ABA stacking.

Nonlocal Polarization Feedback in a Fractional Quantum Hall Ferromagnet

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a nonlocal effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a ν=2/3 fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

Localized NMR Mediated by Electrical-Field-Induced Domain Wall Oscillation in Quantum-Hall-Ferromagnet Nanowire

We present fractional quantum Hall domain walls confined in a gate-defined wire structure. Our experiments utilize spatial oscillation of domain walls driven by radio frequency electric fields to cause nuclear magnetic resonance. The resulting spectra are discussed in terms of both large quadrupole fields created around the wire and hyperfine fields associated with the oscillating domain walls. This provides the experimental fact that the domain walls survive near the confined geometry despite of potential deformation, by which a localized magnetic resonance is allowed in electrical means.

Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions

For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm(2)/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.

Enigmatic 4/11 state: a prototype for unconventional fractional quantum Hall effect

The origin of the fractional quantum Hall effect (FQHE) at 4/11 and 5/13 has remained controversial. We make a compelling case that the FQHE is possible here for fully spin polarized composite fermions, but with an unconventional underlying physics. Thanks to a rather unusual interaction between composite fermions, the FQHE here results from the suppression of pairs with a relative angular momentum of three rather than one, confirming the exotic mechanism proposed by Wójs, Yi, and Quinn [Phys. Rev. B 69, 205322 (2004)]. We predict that the 4/11 state reported a decade ago by Pan et al. [Phys. Rev. Lett. 90, 016801 (2003)] is a conventional partially spin polarized FQHE of composite fermions, and we estimate the Zeeman energy where a phase transition into the unconventional fully spin polarized state will occur.

Phase diagram of the two-component fractional quantum Hall effect

We calculate the phase diagram of the two component fractional quantum Hall effect as a function of the spin or valley Zeeman energy and the filling factor, which reveals new phase transitions and phase boundaries spanning many fractional plateaus. This phase diagram is relevant to the fractional quantum Hall effect in graphene and in GaAs and AlAs quantum wells, when either the spin or valley degree of freedom is active.

Many-body effects on the rho(xx) ringlike structures in two-subband wells

The longitudinal resistivity rho(xx) of two-dimensional electron gases formed in wells with two subbands displays ringlike structures when plotted in a density-magnetic-field diagram, due to the crossings of spin-split Landau levels (LLs) from distinct subbands. Using spin density functional theory and linear response, we investigate the shape and spin polarization of these structures as a function of temperature and magnetic-field tilt angle. We find that (i) some of the rings "break" at sufficiently low temperatures due to a quantum Hall ferromagnetic phase transition, thus exhibiting a high degree of spin polarization (approximately 50%) within, consistent with the NMR data of Zhang et al. [Phys. Rev. Lett. 98, 246802 (2007)], and (ii) for increasing tilting angles the interplay between the anticrossings due to inter-LL couplings and the exchange-correlation effects leads to a collapse of the rings at some critical angle theta(c), in agreement with the data of Guo et al. [Phys. Rev. B 78, 233305 (2008)].

Electronic transport properties of the Ising quantum Hall ferromagnet in a Si quantum well

Magnetotransport properties are investigated for a high mobility Si two-dimensional electron system in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.

Ettingshausen effect around a Landau level filling factor nu = 3 studied by dynamic nuclear polarization

A spin current perpendicular to the electric current is investigated around a Landau level filling factor nu=3 in a GaAs/AlGaAs two-dimensional electron system. Measurements of dynamic nuclear polarization in the vicinity of the edge of a specially designed Hall bar sample indicate that the direction of the spin current with respect to the Hall electric field reverses its polarity at nu=3, where the dissipative current carried by holes in the spin up Landau level is replaced with that by electrons in the spin down Landau level.

Hysteretic resistance spikes in quantum hall ferromagnets without domains

We use spin-density-functional theory to study recently reported hysteretic magnetoresistance rho(xx) spikes in Mn-based 2D electron gases [Phys. Rev. Lett. 89, 266802 (2002)10.1103/PhysRevLett.89.266802]. We find hysteresis loops in our calculated Landau fan diagrams and total energies signaling quantum Hall ferromagnet phase transitions. Spin-dependent exchange-correlation effects are crucial to stabilize the relevant magnetic phases arising from distinct symmetry-broken excited- and ground-state solutions of the Kohn-Sham equations. Besides hysteretic spikes in rho(xx), we predict hysteretic dips in the Hall resistance rho(xy). Our theory, without domain walls, satisfactorily explains the recent data.

Spectral properties of rotating electrons in quantum dots and their relation to quantum Hall liquids

The exact diagonalization technique is used to study many-particle properties of interacting electrons with spin, confined in a two-dimensional harmonic potential. The single-particle basis is limited to the lowest Landau level. The results are analysed as a function of the total angular momentum of the system. Only at angular momenta corresponding to the filling factors 1, 1/3, 1/5, etc is the system fully polarized. The lowest energy states exhibit spin waves, domains, and localization, depending on the angular momentum. Vortices exist only at excited polarized states. The high angular momentum limit shows localization of electrons and separation of the charge and spin excitations.

Low-Frequency Spin Dynamics in a Canted Antiferromagnet

Resistively detected nuclear spin relaxation measurements in closely separated two-dimensional electron systems reveal strong low-frequency electron-spin fluctuations in the quantum Hall regime. As the temperature is decreased, the spin fluctuations, manifested by a sharp enhancement of the nuclear spin-lattice relaxation rate 1/T1, continue to grow down to the lowest temperature of 66 millikelvin. The observed divergent behavior of 1/T1 signals a gapless spin excitation mode and is a hallmark of canted antiferromagnetic order. Our data demonstrate the realization of a two-dimensional system with planar broken symmetry, in which fluctuations do not freeze out when approaching the zero temperature limit.

Intervalley gap anomaly of two-dimensional electrons in silicon

We report here a systematic study of the energy gaps at the odd-integer quantum Hall states nu = 3 and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley splitting is independent of the in-plane fields. However, the nu = 3 valley gap differs by about a factor of 3 (Deltav approximately 0.4 vs 1.2 K) on different sides of the coincidence. More surprisingly, instead of reducing to zero, the energy gaps at nu = 3 and 5 rise rapidly when approaching the coincidence angles. We believe that such an anomaly is related to strong couplings of the nearly degenerate Landau levels.

Critical resistance in the AlAs quantum Hall ferromagnet

Magnetic transitions in AlAs two-dimensional electrons give rise to sharp resistance spikes within the quantum Hall effect. Such spikes are likely caused by carrier scattering at magnetic domain walls below the Curie temperature. We report a critical behavior in the temperature dependence of the spike width and amplitude, from which we deduce the Curie temperature of the quantum Hall ferromagnet. Our data also reveal that the Curie temperature increases monotonically with carrier density.

Metamorphosis of the quantum Hall ferromagnet at nu=2/5

We report on the dramatic evolution of the quantum Hall ferromagnet in the fractional quantum Hall regime at nu=2/5 filling. A large enhancement in the characteristic time scale gives rise to a dynamical transition into a novel quantized Hall state. The observed Hall state is determined to be a zero-temperature phase distinct from the spin-polarized and spin-unpolarized nu=2/5 fractional quantum Hall states. It is characterized by a strong temperature dependence and puzzling correlation between temperature and time.

Skyrmions in nematic liquid crystals

Analytical solutions for static two-dimensional axisymmetric localized states minimizing the Frank free energy for nematic liquid crystals have been derived. These solitonic structures (skyrmions) include the well-known Belavin-Polyakov solutions as a special case for equal elastic constants. The structure and the equilibrium parameters of these nematic skyrmions crucially depend on values of the elastic constants. Stability limits of these structures and the possibility to observe them in nematic liquid crystals are discussed.

Ising quantum Hall ferromagnet in magnetically doped quantum wells

We report on the observation of the Ising quantum Hall ferromagnet with Curie temperature T(C) as high as 2 K in a modulation-doped (Cd,Mn)Te heterostructure. In this system field-induced crossing of Landau levels occurs due to the giant spin-splitting effect. Magnetoresistance data, collected over a wide range of temperatures, magnetic fields, tilt angles, and electron densities, are discussed taking into account both Coulomb electron-electron interactions and s-d coupling to Mn spin fluctuations. The critical behavior of the resistance "spikes" at T-->T(C) corroborates theoretical suggestions that the ferromagnet is destroyed by domain excitations.

From quantum Hall ferromagnetism to huge longitudinal resistance at the 2/3 fractional quantum Hall state

We observe the transition from a spin-unpolarized to a polarized nu=2/3 fractional quantum Hall state at low currents (<5 nA), recently described in terms of quantum Hall ferromagnetism, versus density and parallel magnetic field. At larger currents the time and current dependent huge longitudinal resistance (HLR) is always initiated at the transition. Transport in the HLR regime is linear and the amount of current-induced nuclear polarization in the HLR is comparable to the thermal nuclear polarization at approximately 20 mK and 10 T. A current-induced disorder in the nuclear polarization is speculated to cause the enhanced resistance in the HLR regime.

Phase diagram of interacting composite fermions in the bilayer nu=2/3 quantum hall effect

We study the phase diagram of composite fermions (CFs) in the presence of spin and pseudospin degrees of freedom in the bilayer nu=2/3 quantum Hall (QH) state. Activation studies elucidate the existence of three different QH states with two different types of hysteresis in the magnetotransport. While a noninteracting CF model provides a qualitative account of the phase diagram, the observed renormalization of tunneling gap and a non-QH state at high densities are not explained in the noninteracting CF model, and are suggested to be manifestations of interactions between CFs.

Electrically controlled nuclear spin polarization and relaxation by quantum-Hall states

We study interactions between electrons and nuclear spins by using the resistance ( Rxx) peak which develops near the Landau-level filling factor nu = 2/3 as a probe. Temporarily tuning nu to a different value, nu(temp), with a gate demonstrates that the Rxx peak regenerates even after complete depletion ( nu(temp) = 0), while it rapidly relaxes on either side of nu(temp) = 1. This indicates that the nu = 2/3 domain morphology is memorized by the nuclear spins which can be rapidly depolarized by Skyrmions. An additional enhancement in the nuclear spin relaxation around nu = 1/2 and 3/2 suggests a Fermi sea of partially polarized composite fermions.

Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we report procedures that carry out the controlled transfer of spin angular momentum between electrons-confined to two dimensions and subjected to a perpendicular magnetic field-and the nuclei of the host semiconductor, using gate voltages only. We show that the spin transfer rate can be enhanced near a ferromagnetic ground state of the electron system, and that the induced nuclear spin polarization can be subsequently stored and 'read out'. These techniques can also be combined into a spectroscopic tool to detect the low-energy collective excitations in the electron system that promote the spin transfer. The existence of such excitations is contingent on appropriate electron-electron correlations, and these can be tuned by changing, for example, the electron density via a gate voltage.

Resistance spikes and domain wall loops in Ising quantum Hall ferromagnets

We explain the recent observation of resistance spikes and hysteretic transport properties in Ising quantum Hall ferromagnets in terms of the unique physics of their domain walls. Self-consistent RPA/Hartree-Fock theory is applied to microscopically determine properties of the ground state and domain wall excitations. In these systems domain wall loops support one-dimensional electron systems with an effective mass comparable to the bare electron mass and may carry charge. Our theory is able to account quantitatively for the experimental Ising critical temperature and to explain qualitative characteristics of the resistive hysteresis loops.

Charge excitations in easy-axis and easy-plane quantum Hall ferromagnets

We study charge excitations in quantum Hall ferromagnets realized in a symmetric quantum well. Landau levels (LLs) with different subband and orbital indices crossing at the Fermi level act as up and down pseudospin levels. The activation energy measured as a function of the pseudospin Zeeman energy, Delta(Z), reveals easy-plane and easy-axis ferromagnetism for LL filling of nu = 3 and 4, respectively, for which the crossing levels have parallel and antiparallel spin. For nu = 4, we observe a sharp reduction in the gap for Delta(Z)-->0, which we discuss in terms of a topological excitation in domain walls akin to Skyrmions.

Ising ferromagnetism and domain morphology in the fractional quantum Hall regime

The density driven quantum phase transition between the unpolarized and fully spin polarized nu = 2/3 fractional quantum Hall state is accompanied by hysteresis in accord with 2D Ising ferromagnetism and domain formation. The temporal behavior is reminiscent of the Barkhausen and time-logarithmic magnetic after-effects ubiquitous in familiar ferromagnets. It too suggests domain morphology and, in conjunction with NMR, intricate domain dynamics, which is partly mediated by the contact hyperfine interaction with nuclear spins of the host semiconductor.

Resistance spikes at transitions between quantum hall ferromagnets

We report a manifestation of first-order magnetic transitions in two-dimensional electron systems. This phenomenon occurs in aluminum arsenide quantum wells with sufficiently low carrier densities and appears as a set of hysteretic spikes in the resistance of a sample placed in crossed parallel and perpendicular magnetic fields, each spike occurring at the transition between states with different partial magnetizations. Our experiments thus indicate that the presence of magnetic domains at the transition starkly increases dissipation, an effect also suspected in other ferromagnetic materials. Analysis of the positions of the transition spikes allows us to deduce the change in exchange-correlation energy across the magnetic transition, which in turn will help improve our understanding of metallic ferromagnetism.