Extreme Bottom-up Gold Filling of High Aspect Ratio Features

ConspectusWhere copper interconnects fabricated using superconformal electrodeposition processes have enabled dramatic advances in microelectronics over the past quarter century, gold filled gratings fabricated using superconformal Bi³⁺-mediated bottom-up filling electrodeposition processes promise to enable a new generation of X-ray imaging and microsystem technologies. Indeed, bottom-up Au-filled gratings have demonstrated excellent performance in X-ray phase contrast imaging of biological soft tissue and other low Z element samples even as studies using gratings with inferior Au fill have captured the potential for broader biomedical application. Four years ago, the Bi-stimulated bottom-up Au electrodeposition process was a scientific novelty where gold deposition was localized entirely on the bottoms of metallized trenches 3-μm-deep and 2-μm-wide, an aspect ratio of only 1.5, on centimeter scale fragments of patterned silicon wafers. Today the room-temperature processes routinely yield uniformly void-free filling of metallized trenches 60-μm-deep and 1-μm-wide, an aspect ratio 60, in gratings patterned across 100 mm Si wafers. Four distinctive characteristics of the evolution of void-free filling in the Bi³⁺-containing electrolyte are seen in experimental Au filling of fully metallized recessed features such as trenches and vias: (1) an "incubation period" of conformal deposition, (2) subsequent Bi-activated deposition localized on the bottom surface of features, (3) sustained bottom-up deposition that yields void-free filling, and (4) self-passivation of the active growth front at a distance from the feature opening defined by operating conditions. A recent model captures and explains all four features. The electrolyte solutions are simple and nontoxic, being near-neutral pH and composed of Na₃Au(SO₃)₂ + Na₂SO₃ containing micromolar concentrations of Bi³⁺ additive, the latter generally introduced through electrodissolution from the metal. The influences of additive concentration, metal ion concentration, electrolyte pH, convection, and applied potential have been examined in some depth using both electroanalytical measurements on planar rotating disk electrodes and studies of feature filling, thereby defining and elucidating relatively wide processing windows for defect-free filling. The process control for bottom-up Au filling processes is observed to be quite flexible, with online changes of potential as well as concentration and pH adjustments during the course of filling compatible with processing. Furthermore, monitoring has enabled optimization of the filling evolution, including to shorten the incubation period for accelerated filling and to fill features of ever higher aspect ratio. The results to date indicate that the demonstrated filling of trenches with an aspect ratio of 60 represents a lower bound, a value determined only by the features presently available.

Survey of P-Block Metal Additives for Superconformal Cu Deposition in an Alkaline Electrolyte

Catalysis of Cu deposition from a near-neutral Cu2+ complexed electrolyte is examined using Bi3+, Pb2+ and Tl+ additives that were selected based on their known ability to accelerate Au deposition in near neutral pH gold sulfite electrolytes. Where appropriate, the ability of these electrolytes to yield superconformal filling of recessed features is also briefly examined. Voltammetry reveals strong acceleration of Cu deposition by Bi3+ additions while indication of superconformal filling accompanied by unusual microstructural transitions are evident in cross-sectioned specimens examined by scanning electron microscopy. Results are discussed in the context of behaviors observed for the same heavy metal additives in gold sulfite electrolytes.

Mechanism of Bismuth Stimulated Bottom-up Gold Feature Filling

The mechanism underlying Bi 3+-stimulated bottom-up Au filling and self-passivation in trenches and vias in slightly alkaline Na 3 Au(SO 3)2 + Na 2 SO 3 electrolytes is explored. The impacts of electrolyte components Na 3 Au(SO 3)2, Na 2 SO 3 and Bi 3+ and potential-dependent kinetic factors on the rate of Au electrodeposition are quantified experimentally. Derived parameters are applied within the surfactant conservation Curvature Enhanced Accelerator Coverage model to simulate the filling of high aspect ratio trenches. It is observed that Bi adsorption accelerates the Au deposition rate with a non-linear dependence occurring around a critical coverage. Further, the impact of electrolyte composition is such that gradients of A u ( S O 3 ) 2 3 - and S O 3 2 - derived from reduction of A u ( S O 3 ) 2 3 - during deposition accentuate deposition farther from the feature opening. These factors and surface area reduction at the bottoms of filling features localize active deposition to feature bottoms. Ultimately, weakening of the concentration gradients and associated kinetics as bottom-up feature filling progresses reduces the Bi coverage on the growth front below the critical value and bottom-up growth terminates. Good agreement is observed with key experimental features including the incubation period of conformal deposition, transition to bottom-up growth, subsequent bottom-up filling and finally self-passivation as the growth front nears the field.

Microstructure and Texture in Copper Filled Millimeter Scale Through Silicon Vias

The microstructure and crystallographic texture of copper electrodeposits in millimeter scale through silicon vias are characterized using electron backscatter diffraction. The deposits obtained from additive-containing CuSO4-H2SO4 electrolytes are characteristic of the superconformal deposition process, with growth textures and columnar grains consistent with previous findings in smaller TSV. The microstructure, like the filling evolution it records, changes substantially with chloride concentration for the concentrations of polymer suppressor used. With chloride concentrations of 80 μmol·L-1 and less, columnar grains of Cu capture the linear motion of the local growth front during filling with a strong <110> orientation along the elongated grain axes typical of deposition in chloride-containing Cu electrolytes. In the mid- and upper- via locations these columnar grains are angled upward from the sidewalls toward the center of the v-shaped growth front. In a limited region adjacent to the via bottom they extend vertically from the bottom surface. With millimolar chloride concentration, deposition also exhibits columnar grains with preferred <110> growth orientation in the lower region of the via and adjacent to the sidewalls. However, separation of the central deposit from the sidewalls results in a convex geometry of the growth front and spatially varying texture in most of the deposit.

Robust Bottom-Up Gold Filling of Deep Trenches and Gratings

This work extends an extreme variant of superconformal Au electrodeposition to deeper device architectures while exploring factors that constrain its function and the robustness of void-free processing. The unconventional bottom-up process is used to fill diffraction gratings with trenches 94 μm deep and 305 μm deep, with aspect ratios (height/width) of just below 20 and 15, respectively, in near-neutral 0.16 mol·L-1 Na3Au(SO3)2 + 0.64 mol·L-1 Na2SO3 electrolyte containing 50 μmol·L-1 Bi3+. Although the aspect ratios are modest compared to previously demonstrated void-free filling beyond AR = 60, the deepest trenches filled exceed those in previous work by 100 μm - a nearly 50 % increase in depth. Processes that substantially accelerate the start of bottom-up deposition demonstrate a linkage between transport and void-free filling. Final profiles are highly uniform across 65 mm square gratings because of self-passivation inherent in the process. Electron microscopy and electron backscatter diffraction confirm the fully dense Au and void-free filling suggested by the electrochemical measurements. X-ray transmission "fringe visibility" average more than 80 % at 50 kV X-ray tube voltage across the deeper gratings and 70 % at 40 kV across the shallower gratings, also consistent with uniformly dense, void-free fill across the gratings.

Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-component additive was developed: 3-(2-(4,5-dihydrothiazol-2-yl) disulfanyl) propane-1-sulfonic acid/sulfonate (SH110). Sodium 3,3'-dithiodipropane sulfonate (SPS) and SH110 were used as additives for TSV electroplating copper filling. SH110 resulted in void-free filling, whereas large keyhole voids were found for SPS. To understand how the additives affect the filling mechanism, linear sweep voltammetry of the plating solutions was carried out. The interactions between the Cu surface and additives were simulated by molecular dynamics (MD) analysis using Materials Studio software, and quantum chemistry calculations were conducted using GAUSSIAN 09W. SH110 adsorbs to the Cu surface by both 4,5-dihydrothiazole (DHT) and 3-mercaptopropane sulfonate (MPS) moieties, while SPS is adsorbed only by MPS moieties. MD simulations indicated that the adsorption of the coplanar MPS moiety is the main factor governing acceleration. Quantum chemistry calculations showed that DHT provides an inhibitory effect for TSV filling, while MPS acts as an accelerator for SH110. SH110 is an excellent additive exhibiting both the acceleration and the suppression necessary for achieving void-free TSV filling.

Bottom-Up Gold Filling in New Geometries and Yet Higher Aspect Ratio Gratings for Hard X-Ray Interferometry

An extreme bottom-up filling variant of superconformal Au electrodeposition yielding void-free filling of recessed features is demonstrated with diffraction gratings composed of a two-dimensional patterned "chessboard" array of square vias of aspect ratio (depth/width) ≈ 23 as well as one-dimensional arrays of trenches having aspect ratios exceeding 50 and 65. Deposition on planar and patterned substrates is examined in several near-neutral x mol·L-1 Na3Au(SO3)2 + 0.64 mol·L-1 Na2SO3 electrolytes (x = [0.08, 0.16, 0.32]) containing ≈ 50 μmol·L-1 Bi3+ additive. The electrolytes are similar to those used in earlier work, although the upper bound on Au(SO3)2 concentration is twofold greater than previously described. Filling results are complemented by associated current and deposition charge transients whose features, particularly with well controlled pH, exhibit repeatable behaviors and timescales for incubation of passive deposition followed by bottom-up, void-free filling. While incompletely filled features can exhibit substantial via-to-via variation in fill height, self-passivation that follows complete bottom-up filling results in highly uniform filling profiles across the substrates. Visibility measurements capture the quality and uniformity of the as-formed wafer scale gratings. X-ray phase contrast imaging demonstrates their potential for imaging applications.

Additives for Superconformal Gold Feature Filling

An overview of the effect of additives on Au electrodeposition from Na3Au(SO3)2 based electrolytes is presented with an emphasis on filling of fully metallized recessed surface features such as trenches and vias. The impact of heavy metals additives Tl+, Pb2+, and Bi3+ is reviewed and accompanied by a brief survey of the effects of Sb3+, Te4+, SeCN-, 3-mercapto-1-propanesulfonic acid (MPS) and polyethyleneimine (PEI) additions. The addition of Tl+, Pb2+, Bi3+ or Sb3+ accelerates the kinetics of Au(SO3)2 3- reduction to Au, as manifest in hysteretic voltammetry and rising chronoamperometric transients, and yields bright specular deposits. Gold deposition with Pb2+ addition exhibits superconformal filling in sub-micrometer trenches while Bi3+ addition induces a more extreme bottom-up filling, but Tl+ and Sb3+ additions yield essentially conformal deposition for the conditions examined. Modest acceleration and hysteresis observed with Te4+ addition reflect roughening due to limited nucleation, 3D growth and delayed coalescence, rather than catalysis, and are associated with conformal feature filling. Unlike the other additives, SeCN-, MPS and PEI inhibit the deposition kinetics. Breakdown of suppression during deposition in micrometer size trenches is biased toward recessed surfaces where the flux of suppressor is constrained, yielding localized deposition and superconformal filling.

Effect of Chloride on Microstructure in Cu Filled Microscale Through Silicon Vias

The microstructure of copper filled through silicon vias deposited in a CuSO4 + H2SO4 electrolyte containing micromolar concentrations of deposition rate suppressing poloxamine and chloride additives is explored using electron backscatter diffraction. Regions with distinct microstructures are observed in the vias, including conformal deposition and seam formation localized adjacent to the bottom that can transition to bottom-up filling higher in the features. The presence and extent of each microstructure depends on applied potential as well as additive concentration. Deposition in the presence of higher chloride concentration yields a strong (110) growth texture in regions where bottom-up filling exhibits a horizontal growth front profile while (110) textured or untextured growth is observed for different conditions where upward growth proceeds with a v-notch profile.

Enthalpy and entropy of oxygen electroadsorption on RuO2(110) in alkaline media

We report the temperature influence of the OH_ad and O_ad electroadsorption on RuO₂(110) films grown on TiO₂(110) crystals in alkaline media. From the temperature effect, we evaluate the enthalpy and entropy of the OH_ad and O_ad electroadsorption, including the adsorbate-adsorbate interactions that we analyze using the interaction parameters of the Frumkin-isotherm model. We found that the adsorbates repel each other enthalpically but attract each other entropically. Our result suggests that an entropy analysis is necessary to capture the electroadsorption behavior on RuO₂ since the enthalpy-entropy competition strongly influences the electroadsorption behavior. Our observation of an entropic force is consistent with the view that water may be a mediator for adsorbate-adsorbate interactions.

The Impact of Organic Additives on Copper Trench Microstructure

Organic additives are typically used in the pulse electrodeposition of copper (Cu) to prevent void formation during the filling of high aspect ratio features. In this work, the role of bath chemistry as modified by organic additives was investigated for its effects on Cu trench microstructure. Polyethylene glycol (PEG), bis(3-sulfopropyl) disulfide (SPS), and Janus green b (JGB) concentrations were varied in the Cu electrodeposition bath. Results indicated a correlation between the JGB/SPS ratio and the surface roughness and residual stresses in the Cu. Electron backscattering diffraction (EBSD) and transmission Kikuchi diffraction (TKD) were used to study the cross-sectional microstructure in the trenches. Finer grain morphologies appeared in trenches filled with organic additives as compared to additive-free structures. Cu trench (111) texture also decreased with increasing organic additive concentrations due to more pronounced influence of sidewall seed layers on trench features. Twin density in the microstructure closely tracked calculated stresses in the Cu trenches. A comprehensive microstructural analysis was conducted in this study, on an area of focus that has garnered little attention from the literature, yet can have a major impact on microelectronic reliability.

Dynamic through-silicon-via filling process using copper electrochemical deposition at different current densities

This work demonstrates the dynamic through-silicon-via (TSV) filling process through staged electrodeposition experiments at different current densities. Different morphologies corresponding to TSV filling results can be obtained by controlling the applied current density. Specifically, a low current density (4 mA/cm2) induces seam defect filling, a medium current density (7 mA/cm2) induces defect-free filling, and a high current density (10 mA/cm2) induces void defect filling. Analysis of the filling coefficient indicates that the effect of current density on the TSV filling models is triggered by the coupling effect of consumption and diffusion of additives and copper ions. Further, the morphological evolution of plating reveals that the local deposition rate is affected by the geometrical characteristics of the plating.

4,6-Dimethyl-2-mercaptopyrimidine as a potential leveler for microvia filling with electroplating copper

Filling performance of microvia was defined as following equation: η = (A/B) × 100%.

Adsorption and desorption of bis-(3-sulfopropyl) disulfide during Cu electrodeposition and stripping at Au electrodes

The adsorption and desorption of bis-(3-sulfopropyl) disulfide (SPS) on Cu and Au electrodes and its electrochemical effect on Cu deposition and dissolution were examined using cyclic voltammetry stripping (CVS), field-emission scanning electron microscopy (FESEM), and X-ray photoelectron spectroscopy (XPS). SPS dissociates into 3-mercapto-1-propanesulfonate when it is contacted with Au and Cu electrodes, producing Cu(I)- and Au(I)-thiolate species. These thiolates couple with chloride ions and promote not only the reduction of Cu(2+) in Cu deposition but also the oxidation of Cu(0) to Cu(+) in Cu stripping. During Cu electrodeposition on the SPS-modified Au electrode, thiolates transfer from Au onto the Cu underpotential deposition (UPD) layer. The Cu UPD layer stabilizes a large part of the transferred thiolates which subsequently is buried by the Cu overpotential deposition (OPD) layer. The buried thiolates reappear on the Au electrode after the copper deposit is electrochemically stripped off. A much smaller part of thiolates transfers to the top of the Cu OPD layer. In contrast, when SPS preadsorbs on a Cu-coated Au electrode, almost all of the adsorbed SPS leaves the Cu surface during Cu electrochemical stripping and does not return to the uncovered Au surface. A reaction mechanism is proposed to explain these results.