A short review of the electrochemical technologies for pit arrays fabricated on the surfaces of indium phosphide wafer

Fabricating a pit array on the surface of indium phosphide wafer can change its photoelectric properties, improve its photoelectric conversion efficiency, and expand its application range. There are few reviews devoted to the fabrication of regular hole arrays on the surface of indium phosphide wafers by electrochemical methods. In this paper, twelve electrochemical approaches for assembling pit arrays on the surface of indium phosphide wafers were introduced, the structure and experimental process of the electrochemical device were highlighted, and the resulting top and section views were also shown by animation. It can provide a useful reference guide for the large-scale fabrication of regular hole arrays on the surface of indium phosphide wafers.

Hexagonal geometric patterns formed by radial pore growth of InP based on Voronoi tessellation

To fabricate ordered geometric patterns consisting of InP nanoporous structures, a photoresist mask with periodic opening arrays was prepared by sphere photolithography. The diameter and interval of the openings of the photoresist mask could be controlled independently by adjusting the diameter of silica spheres used as a lens and the exposure time. Through this resist mask with a two-dimensional (2D) hexagonal array of openings, the pore growth of InP during anodic etching was investigated. The isolated openings could act as initiation sites for the radial growth of pores, resulting in the formation of hexagonal geometric patterns based on Voronoi tessellation in 2D space. With further anodic etching, inside the substrate, the growth direction of the pores changed from radial to perpendicular relative to the substrate. Moreover, by removing domains consisting of nanopores by anisotropic chemical etching, the fabrication of InP microhole arrays with circular and triangular cross sections was also achieved.