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Cui A, Dong H, Hu W. Nanogap Electrodes towards Solid State Single-Molecule Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:6115-6141. [PMID: 26450402 DOI: 10.1002/smll.201501283] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2015] [Revised: 07/23/2015] [Indexed: 06/05/2023]
Abstract
With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits.
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Affiliation(s)
- Ajuan Cui
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China
| | - Wenping Hu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China
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Jang JE, Cha SN, Choi YJ, Kang DJ, Butler TP, Hasko DG, Jung JE, Kim JM, Amaratunga GAJ. Nanoscale memory cell based on a nanoelectromechanical switched capacitor. NATURE NANOTECHNOLOGY 2008. [PMID: 18654446 DOI: 10.1063/1.1868064] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory and carbon nanotube field-effect transistors, for ultra-large-scale integrated memory. Electromechanical devices are suitable for memory applications because of their excellent 'ON-OFF' ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements. Nanoelectromechanical devices based on carbon nanotubes have been reported previously, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines 'ON' and 'OFF' states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.
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Son YW, Ihm J, Cohen ML, Louie SG, Choi HJ. Electrical switching in metallic carbon nanotubes. PHYSICAL REVIEW LETTERS 2005; 95:216602. [PMID: 16384166 DOI: 10.1103/physrevlett.95.216602] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2005] [Indexed: 05/05/2023]
Abstract
We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects. The change of the resistance is predicted to range over more than 2 orders of magnitude with experimentally attainable electric fields. This novel property has its origin that backscattering of conduction electrons by impurities or defects in the nanotubes is strongly dependent on the strength and/or direction of the applied electric fields. We expect this property to open a path to new device applications of metallic carbon nanotubes.
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Affiliation(s)
- Young-Woo Son
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
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Sun CQ, Bai HL, Li S, Tay BK, Li C, Chen TP, Jiang EY. Length, Strength, Extensibility, and Thermal Stability of a Au−Au Bond in the Gold Monatomic Chain. J Phys Chem B 2004. [DOI: 10.1021/jp035815j] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Chang Q. Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, and Institute of Advanced Materials Physics and Faculty of Science, Tianjin University, Tianjin 30072, People's Republic of China
| | - H. L. Bai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, and Institute of Advanced Materials Physics and Faculty of Science, Tianjin University, Tianjin 30072, People's Republic of China
| | - S. Li
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, and Institute of Advanced Materials Physics and Faculty of Science, Tianjin University, Tianjin 30072, People's Republic of China
| | - B. K. Tay
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, and Institute of Advanced Materials Physics and Faculty of Science, Tianjin University, Tianjin 30072, People's Republic of China
| | - C. Li
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, and Institute of Advanced Materials Physics and Faculty of Science, Tianjin University, Tianjin 30072, People's Republic of China
| | - T. P. Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, and Institute of Advanced Materials Physics and Faculty of Science, Tianjin University, Tianjin 30072, People's Republic of China
| | - E. Y. Jiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, and Institute of Advanced Materials Physics and Faculty of Science, Tianjin University, Tianjin 30072, People's Republic of China
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