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Kannappan P, Sedrine NB, Teixeira JP, Soares MR, Falcão BP, Correia MR, Cifuentes N, Viana ER, Moreira MVB, Ribeiro GM, de Oliveira AG, González JC, Leitão JP. Substrate and Mg doping effects in GaAs nanowires. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2017; 8:2126-2138. [PMID: 29090114 PMCID: PMC5647700 DOI: 10.3762/bjnano.8.212] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2017] [Accepted: 09/11/2017] [Indexed: 06/07/2023]
Abstract
Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i) a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii) a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111); iii) the occurrence of a higher WZ phase fraction, in particular for growth on Si(111); iv) an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111)B; and v) a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111). Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm-3 to 1.4 × 1017 cm-3. The estimated electrical mobility was in the range ≈0.3-39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111) substrate is suggested.
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Affiliation(s)
- Perumal Kannappan
- Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
- Crystal Growth Centre, Anna University, Chennai 600 025, India
- Present address: Department of Physics, Bannari Amman Institute of Technology, Sathyamangalam 638 401, India
| | - Nabiha Ben Sedrine
- Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
| | - Jennifer P Teixeira
- Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
| | - Maria R Soares
- Laboratório Central de Análises, Universidade de Aveiro, 3810-193 Aveiro, Portugal
| | - Bruno P Falcão
- Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
| | - Maria R Correia
- Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
| | - Nestor Cifuentes
- Departamento de Física, Universidade Federal de Minas Gerais, 30123-970 Belo Horizonte, Minas Gerais, Brazil
| | - Emilson R Viana
- Departamento Acadêmico de Física-DAVIS, Universidade Tecnológica Federal do Paraná-UTFPR, Av. Sete de Setembro, 3165-Rebouças, ZIP 80230-901, Curitiba, PR, Brazil
| | - Marcus V B Moreira
- Departamento de Física, Universidade Federal de Minas Gerais, 30123-970 Belo Horizonte, Minas Gerais, Brazil
| | - Geraldo M Ribeiro
- Departamento de Física, Universidade Federal de Minas Gerais, 30123-970 Belo Horizonte, Minas Gerais, Brazil
| | - Alfredo G de Oliveira
- Departamento de Física, Universidade Federal de Minas Gerais, 30123-970 Belo Horizonte, Minas Gerais, Brazil
| | - Juan C González
- Departamento de Física, Universidade Federal de Minas Gerais, 30123-970 Belo Horizonte, Minas Gerais, Brazil
| | - Joaquim P Leitão
- Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
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Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Gösele U, Bachmann J, Nielsch K. The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth. J Am Chem Soc 2010; 132:7592-4. [DOI: 10.1021/ja102590v] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Ren Bin Yang
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Nikolai Zakharov
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Oussama Moutanabbir
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Kurt Scheerschmidt
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Li-Ming Wu
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Ulrich Gösele
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Julien Bachmann
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Kornelius Nielsch
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
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