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Arulpriya P, Krishnaveni T, Shanmugasundaram T, Kadirvelu K. Mesoporous TiO2 @ Fe metal organic framework nanocomposite for an efficient chlorpyrifos detection and degradation. J IND ENG CHEM 2022. [DOI: 10.1016/j.jiec.2022.05.007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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Lähteenlahti V, Schulman A, Beiranvand A, Huhtinen H, Paturi P. Electron Doping Effect in the Resistive Switching Properties of Al/Gd 1-xCa xMnO 3/Au Memristor Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:18365-18371. [PMID: 33832220 PMCID: PMC8288910 DOI: 10.1021/acsami.1c02963] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/13/2021] [Accepted: 03/30/2021] [Indexed: 06/12/2023]
Abstract
We report on the resistive switching (RS) properties of Al/Gd1-xCaxMnO3 (GCMO)/Au thin-film memristors. The devices were studied over the whole calcium substitution range x as a function of electrical field and temperature. The RS properties were found to be highly dependent on the Ca substitution. The optimal concentration was determined to be near x = 0.9, which is higher than the values reported for other similar manganite-based devices. We utilize an equivalent circuit model which accounts for the obtained results and allows us to determine that the electrical conduction properties of the devices are dominated by the Poole-Frenkel conduction mechanism for all compositions. The model also shows that lower trap energy values are associated with better RS properties. Our results indicate that the main RS properties of Al/GCMO/Au devices are comparable to those of other similar manganite-based materials, but there are marked differences in the switching behavior, which encourage further exploration of mixed-valence perovskite manganites for RS applications.
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Affiliation(s)
- Ville Lähteenlahti
- Wihuri Physical Laboratory, Department
of Physics and Astronomy, University of
Turku, FI-20014 Turku, Finland
| | - Alejandro Schulman
- Wihuri Physical Laboratory, Department
of Physics and Astronomy, University of
Turku, FI-20014 Turku, Finland
| | - Azar Beiranvand
- Wihuri Physical Laboratory, Department
of Physics and Astronomy, University of
Turku, FI-20014 Turku, Finland
| | - Hannu Huhtinen
- Wihuri Physical Laboratory, Department
of Physics and Astronomy, University of
Turku, FI-20014 Turku, Finland
| | - Petriina Paturi
- Wihuri Physical Laboratory, Department
of Physics and Astronomy, University of
Turku, FI-20014 Turku, Finland
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Polek T, Semen’ko M, Endo T, Nakamura Y, Lotey GS, Tovstolytkin A. ESR Study of (La,Ba)MnO 3/ZnO Nanostructure for Resistive Switching Device. NANOSCALE RESEARCH LETTERS 2017; 12:180. [PMID: 28282983 PMCID: PMC5344876 DOI: 10.1186/s11671-017-1961-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2016] [Accepted: 02/27/2017] [Indexed: 06/06/2023]
Abstract
Structure, electric, and resonance properties of (La,Ba)MnO3/ZnO nanostructure grown on SrTiO3 (001) substrate have been investigated. It is found that at room temperature and relatively low voltages (|V |< 0.2 V), the structure shows good rectification behavior with rectification factor near 210. Resistive switching properties are detected after application of higher voltages. Temperature evolution of magnetic phase composition of the sample is analyzed in detail, based on results of electron spin resonance measurements. It is shown that magnetic state below 260 K is characterized by coexistence of ferromagnetic and paramagnetic phases, but no evidence of magnetic phase separation is revealed at higher temperatures. Different driving mechanisms for resistive switching, such as magnetic phase separation and/or electric field-induced migration of oxygen vacancies, are discussed in the context of obtained results.
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Affiliation(s)
- Taras Polek
- Institute of Magnetism, 36b Vernadsky Boulevard, Kyiv, 03680 Ukraine
| | - Mykhaylo Semen’ko
- Department of Physics, Taras Shevchenko National University of Kyiv, Volodymyrska Street, 64/13, Kyiv, 01601 Ukraine
| | - Tamio Endo
- Sagamihara Surface Lab, 1880-2 Kamimizo, Chuoku, Sagamihara, Kanagawa 252-0243 Japan
| | | | - Gurmeet Singh Lotey
- Department of Physics, Nano Research Lab, DAV University, Jalandhar, Punjab 144012 India
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Fu J, Hua M, Ding S, Chen X, Wu R, Liu S, Han J, Wang C, Du H, Yang Y, Yang J. Stability and its mechanism in Ag/CoO x/Ag interface-type resistive switching device. Sci Rep 2016; 6:35630. [PMID: 27759116 PMCID: PMC5069483 DOI: 10.1038/srep35630] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2015] [Accepted: 09/30/2016] [Indexed: 11/21/2022] Open
Abstract
Stability is an important issue for the application of resistive switching (RS) devices. In this work, the endurance and retention properties of Ag/CoOx/Ag interface-type RS device were investigated. This device exhibits rectifying I-V curve, multilevel storage states and retention decay behavior, which are all related to the Schottky barrier at the interface. The device can switch for thousands of cycles without endurance failure and shows narrow resistance distributions with relatively low fluctuation. However, both the high and low resistance states spontaneously decay to an intermediate resistance state during the retention test. This retention decay phenomenon is due to the short lifetime τ (τ = 0.5 s) of the metastable pinning effect caused by the interface states. The data analysis indicated that the pinning effect is dependent on the depth and density of the interface state energy levels, which determine the retention stability and the switching ratio, respectively. This suggests that an appropriate interface structure can improve the stability of the interface-type RS device.
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Affiliation(s)
- Jianbo Fu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Muxin Hua
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Shilei Ding
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Xuegang Chen
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Rui Wu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Shunquan Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Jingzhi Han
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Changsheng Wang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Honglin Du
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Yingchang Yang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, P.R. China
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