Simulations of silver-doped germanium-selenide glasses and their response to radiation

Broadband optical waveguide modulators based on strongly coupled hybrid graphene and metal nanoribbons for near-infrared applications

In this paper, we numerically demonstrate a variety of broadband optical waveguide modulators based on the hybrid surface plasmon polariton (HSPP) concept for near-infrared applications. The modulator is composed of strongly coupled double-layer graphene and double rectangle cross-sectional metal nanoribbons separated by three Al2O3 spacers, which are interpolated in a SiO2 waveguide. Owing to the unique strong coupling of HSPPs between metal nanoribbons, the subwavelength confinement, the in-plane electric field component, the light-graphene interaction, and the modulation effect of the modulator are significantly enhanced. The results show the proposed modulator achieves an outstanding performance with a modulation depth (MD) over 2.3 dB μm-1 and a small normalized mode area of ∼10-5 in a wide range of wavelength from 1.3 to 1.8 μm. By optimizing the separation of the double rectangle metal nanoribbons at the telecommunication wavelength of 1.55 μm, the modulator exhibits a high MD of 3.12 dB μm-1, a small footprint of 1.8 μm2, an ultra-wide 3 dB modulation bandwidth of 380.23 GHz, and an ultra-low energy consumption of 29.39 fJ per bit. Furthermore, we also demonstrate a modulator based on two properly apart semicircular (rhombus) metal nanoribbons with a drastically enhanced MD of 11.3 (6.32) dB μm-1 at 1.55 μm. Benefitting from the strong subwavelength confinement and excellent broadband modulation performance, the proposed optical waveguide modulators offer a significant potential to realize various long-wave near-infrared integrated modulators, interconnects and optoelectronic devices.

Ab initio computer simulations of non-equilibrium radiation-induced cascades in amorphous Ge2Sb2Te5

Ion irradiation corresponds to a process that involves the production of non-equilibrium cascades in the host material, and the atomistic modelling of such events in glasses is challenging. Here, non-equilibrium cascades in amorphous Ge₂Sb₂Te₅ phase-change memory material have been investigated by means of first-principles molecular-dynamics simulations. A stochastic boundary-conditions approach is employed to treat the thermal nature of the cascades and drive the modelled system back to equilibrium in a natural way, while four different initial thermal-spike energies are considered. A comprehensive analysis of the cascade evolution is presented with respect to the kinetic profile and the dynamics of the cascade inside the glass structure. The modelling results show that the instantaneous maximum kinetic energy decays rapidly with time, and that the time-scale of the ballistic phase of the cascade inside the glass model is very short. The quality of the implemented approach is validated through a comparison of the calculated structure factor for the modelled glasses with experimental data from the literature. Analysis of the bonding for all the species in the glass structure highlights particular structural modifications in the connectivity of the amorphous network due to the simulated cascade.

Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material

The radiation hardness of amorphous Ge₂Sb₂Te₅ phase-change random-access memory material has been elucidated by ab initio molecular-dynamics simulations. Ionizing radiation events have been modeled to investigate their effect on the atomic and electronic structure of the glass. Investigation of the short- and medium-range order highlights a structural recovery of the amorphous network after exposure to the high-energy events modeled in this study. Analysis of the modeled glasses reveals specific structural rearrangements in the local atomic geometry of the glass, as well as an increase in the formation of large shortest-path rings. The electronic structure of the modeled system is not significantly affected by the ionizing radiation events, since negligible differences have been observed before and after irradiation. These results provide a detailed insight into the atomistic structure of amorphous Ge₂Sb₂Te₅ after irradiation and demonstrate the radiation hardness of the glass matrix.

Structure of semiconducting versus fast-ion conducting glasses in the Ag-Ge-Se system

The transition from a semiconductor to a fast-ion conductor with increasing silver content along the Ag x (Ge0.25Se0.75)(100-x) tie line (0≤x≤25) was investigated on multiple length scales by employing a combination of electric force microscopy, X-ray diffraction, and neutron diffraction. The microscopy results show separation into silver-rich and silver-poor phases, where the Ag-rich phase percolates at the onset of fast-ion conductivity. The method of neutron diffraction with Ag isotope substitution was applied to the x=5 and x=25 compositions, and the results indicate an evolution in structure of the Ag-rich phase with change of composition. The Ag-Se nearest-neighbours are distributed about a distance of 2.64(1) Å, and the Ag-Se coordination number increases from 2.6(3) at x=5 to 3.3(2) at x=25. For x=25, the measured Ag-Ag partial pair-distribution function gives 1.9(2) Ag-Ag nearest-neighbours at a distance of 3.02(2) Å. The results show breakage of Se-Se homopolar bonds as silver is added to the Ge0.25Se0.75 base glass, and the limit of glass-formation at x≃28 coincides with an elimination of these bonds. A model is proposed for tracking the breakage of Se-Se homopolar bonds as silver is added to the base glass.