1
|
Wiesner M, Koski K, Laitinen A, Manninen J, Zyuzin AA, Hakonen P. Electron-phonon coupling in copper intercalated Bi[Formula: see text]Se[Formula: see text]. Sci Rep 2022; 12:12097. [PMID: 35840599 PMCID: PMC9287361 DOI: 10.1038/s41598-022-15909-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Accepted: 06/30/2022] [Indexed: 11/09/2022] Open
Abstract
We report charge and heat transport studies in copper-intercalated topological insulator Bi[Formula: see text]Se[Formula: see text] hybrid devices. Measured conductivity shows impact of quantum corrections, electron-electron and electron-phonon interactions. Our shot noise measurements reveal that heat flux displays a crossover between [Formula: see text] and [Formula: see text] with the increase of temperature. The results might be explained by a model of inelastic electron scattering on disorder, increasing the role of transverse acoustic phonons in the electron-phonon coupling process.
Collapse
Affiliation(s)
- Maciej Wiesner
- Faculty of Physics, Adam Mickiewicz University, Poznan, Poland
| | - Kristie Koski
- Department of Chemistry, University of California Davis, Davis, CA USA
| | - Antti Laitinen
- Low Temperature Laboratory, Department of Applied Physics, Aalto University, P.O. Box 15100, 00076 Aalto, Finland
- Department of Physics, Harvard University, Cambridge, MA 02138 USA
| | - Juuso Manninen
- Low Temperature Laboratory, Department of Applied Physics, Aalto University, P.O. Box 15100, 00076 Aalto, Finland
| | - Alexander A. Zyuzin
- Low Temperature Laboratory, Department of Applied Physics, Aalto University, P.O. Box 15100, 00076 Aalto, Finland
| | - Pertti Hakonen
- Low Temperature Laboratory, Department of Applied Physics, Aalto University, P.O. Box 15100, 00076 Aalto, Finland
| |
Collapse
|
2
|
Shi Z, Zhang H, Khan K, Cao R, Zhang Y, Ma C, Tareen AK, Jiang Y, Jin M, Zhang H. Two-dimensional materials toward Terahertz optoelectronic device applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C: PHOTOCHEMISTRY REVIEWS 2022. [DOI: 10.1016/j.jphotochemrev.2021.100473] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
|
3
|
Nivedan A, Das K, Kumar S, Singh A, Mardanya S, Agarwal A, Kumar S. Magnetic field-dependent resistance crossover and anomalous magnetoresistance in topological insulator Bi 2Te 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:425002. [PMID: 32590365 DOI: 10.1088/1361-648x/aba06e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2020] [Accepted: 06/26/2020] [Indexed: 06/11/2023]
Abstract
We report a metal-insulator like transition in single-crystalline 3D topological insulator Bi2Te3at a temperature of 230 K in the presence of an external magnetic field applied normal to the surface. This transition becomes more prominent at larger magnetic field strength with the residual resistance value increasing linearly with the magnetic field. At low temperature, the magnetic field dependence of the magnetoresistance shows a transition from logarithmic to linear behavior and the onset magnetic field value for this transition decreases with increasing temperature. The logarithmic magnetoresistance indicates the weak anti-localization of the surface Dirac electrons while the high temperature behavior originates from the bulk carriers due to intrinsic impurities. At even higher temperatures beyond ∼230 K, a completely classical Lorentz model type quadratic behavior of the magnetoresistance is observed. We also show that the experimentally observed anomalies at ∼230 K in the magneto-transport properties do not originate from any stacking fault in Bi2Te3.
Collapse
Affiliation(s)
- Anand Nivedan
- Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India
| | - Kamal Das
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
| | - Sandeep Kumar
- Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India
| | - Arvind Singh
- Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India
| | - Sougata Mardanya
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016, India
| | - Sunil Kumar
- Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India
| |
Collapse
|
4
|
Antonova IV, Nebogatikova NA, Kokh KA, Kustov DA, Soots RA, Golyashov VA, Tereshchenko OE. Electrochemically exfoliated thin Bi 2Se 3 films and van der Waals heterostructures Bi 2Se 3/graphene. NANOTECHNOLOGY 2020; 31:125602. [PMID: 31778984 DOI: 10.1088/1361-6528/ab5cd5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Thin Bi2Se3 flakes with few nanometer thicknesses and sized up to 350 μm were created by using electrochemical splitting from high-quality Bi2Se3 bulk monocrystals. The dependence of film resistance on the Bi2Se3 flake thickness demonstrates that, at room temperature, the bulk conductivity becomes negligible in comparison with the surface conductivity for films with thicknesses lower than 80 nm. Unexpectedly, all these films demonstrated p-type conductivity. The doping effect with sulfur or sulfur-related radicals during electrochemical exfoliation is suggested for the p-type conductivity of the exfoliated Bi2Se3 films. The formation of 2-8 nm films was predominantly found. Van der Waals (vdW) heterostructures of Bi2Se3/Graphene/SiO2/Si were created and their properties were compared with that of Bi2Se3 on the SiO2/Si substrate. The increase of the conductivity and carrier mobility in Bi2Se3 flakes of 3-5 times was found for vdW heterostructures with graphene. Thin Bi2Se3 films are potentially interesting for applications for spintronics, nano- and optoelectronics.
Collapse
Affiliation(s)
- I V Antonova
- Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia. Novosibirsk State University, Novosibirsk, 630090, Russia. Novosibirsk State Technical University, Novosibirsk, 630073, Russia
| | | | | | | | | | | | | |
Collapse
|
5
|
Tang M, Zhang JY, Bi S, Hou ZL, Shao XH, Zhan KT, Cao MS. Ultrathin Topological Insulator Absorber: Unique Dielectric Behavior of Bi 2Te 3 Nanosheets Based on Conducting Surface States. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33285-33291. [PMID: 31429548 DOI: 10.1021/acsami.9b13775] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Topological insulators exhibit great potential in the fields of electronics and semiconductors for their gapless surface states. Intriguingly, most topological insulators are possibly excellent microwave-absorbing materials because of easy adjustment of electrical transport based on conducting surface states in the nanostructure. Herein, topological insulator Bi2Te3 nanosheets are synthesized by a simple solvothermal method. The material demonstrates a unique dielectric behavior based on conducting surface states, resulting in excellent microwave-absorbing performance. Benefiting from the outstanding impedance matching, Bi2Te3 nanosheets exhibit an ultrathin microwave absorption with the qualified frequency bandwidth of 3.0 GHz at only 0.77 mm thickness, which is thinner than other absorbers in reported references. Moreover, a strong reflection loss of -41 dB at 0.8 mm is achieved. The result provides a new approach for developing ultrathin microwave absorption materials at the submillimeter scale.
Collapse
Affiliation(s)
- Min Tang
- College of Mathematics and Physics , Beijing University of Chemical Technology , Beijing 100029 , China
| | - Jun-Ying Zhang
- College of Mathematics and Physics , Beijing University of Chemical Technology , Beijing 100029 , China
| | - Song Bi
- 501 Department , Xi'an Research Institute of High-Tech , Xi'an 710025 , China
| | - Zhi-Ling Hou
- College of Mathematics and Physics , Beijing University of Chemical Technology , Beijing 100029 , China
| | - Xiao-Hong Shao
- College of Mathematics and Physics , Beijing University of Chemical Technology , Beijing 100029 , China
| | - Ke-Tao Zhan
- College of Mathematics and Physics , Beijing University of Chemical Technology , Beijing 100029 , China
| | - Mao-Sheng Cao
- School of Materials Science and Engineering , Beijing Institute of Technology , Beijing 100081 , China
| |
Collapse
|
6
|
Matetskiy AV, Denisov NV, Zotov AV, Saranin AA. Weak Antilocalization at the Atomic-Scale Limit of Metal Film Thickness. NANO LETTERS 2019; 19:570-575. [PMID: 30511866 DOI: 10.1021/acs.nanolett.8b04560] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Creation of the 2D metallic layers with the thickness as small as a few atomic layers and investigation of their properties are interesting and challenging tasks of the modern condensed-matter physics. One of the possible ways to grow such layers resides in the synthesis of the so-called metal-induced reconstructions on silicon (i.e., silicon substrates covered with ordered metal films of monolayer or submonolayer thickness). The 2D Au-Tl compound on Si(111) surface having [Formula: see text] periodicity belongs to the family of the reconstructions incorporating heavy-metal atoms with a strong spin-orbit coupling (SOC). In such systems, strong SOC results in the spin-splitting of surface-state bands due to the Rashba effect, the occurrence of which was experimentally proved. Another remarkable consequence of a strong SOC that manifests itself in the transport properties is a weak antilocalization (WAL) effect, which has never been explored in the metal layers of atomic thickness. In the present study, the transport and magnetotransport properties of the 2D Au-Tl compound on Si(111) surface were investigated at low temperatures down to ∼2.0 K. The compound was proved to show behavior of the 2D nearly free electron gas system with metallic conduction, as indicated by Ioffe-Regel criterion. It demonstrates the WAL effect which is interpreted in the framework of Hikami-Larkin-Nagaoka theory, and possible mechanisms of the electron decoherence are discussed. Bearing in mind that besides the (Au, Tl)/Si(111)[Formula: see text] system, there are many other ordered atomic-layer metal films on silicon differing by composition, structure, strength of SOC, and spin texture, which provide a promising area for prospective investigations of the WAL effect at the atomic-scale limit when the film thickness is less than the electron wavelength.
Collapse
Affiliation(s)
- Andrey V Matetskiy
- Institute of Automation and Control Processes FEB RAS , 690041 Vladivostok , Russia
| | - Nikita V Denisov
- Institute of Automation and Control Processes FEB RAS , 690041 Vladivostok , Russia
| | - Andrey V Zotov
- Institute of Automation and Control Processes FEB RAS , 690041 Vladivostok , Russia
- School of Natural Sciences , Far Eastern Federal University , 690950 Vladivostok , Russia
| | - Alexander A Saranin
- Institute of Automation and Control Processes FEB RAS , 690041 Vladivostok , Russia
- School of Natural Sciences , Far Eastern Federal University , 690950 Vladivostok , Russia
| |
Collapse
|