Effect of a Rubidium Chloride Carrier Confinement Layer on the Characteristics of CsPbBr3 Perovskite Light-Emitting Diodes

Improved extraction efficiency of CsPbBr3 perovskite light-emitting diodes due to anodic aluminum oxide nanopore structure

In this work, we investigate the improvement in the performance of a CsPbBr₃ perovskite light-emitting diode (PeLED) due to an anodic aluminum oxide (AAO) nanopore structure. The AAO structure in the CsPbBr₃ PeLED structure can improve the light extraction efficiency of CsPbBr₃ PeLEDs in two ways: the emission light in the side direction being redirected to the normal direction due to the light scattering effect caused by aluminum oxide nanopores and the effective emission area as a result of the rough surface of the AAO structure. The peak luminance, current efficiency, and external quantum efficiency (EQE) were 11,460 cd/m², 2.03 cd/A, and 0.69% at a bias of 6.0 V, respectively. For comparison, the luminance, current efficiency, and EQE values of CsPbBr₃ PeLEDs with the AAO structure using 50 V of pore-expanding voltage demonstrated improvements of 282%, 190%, and 1280%, respectively, over CsPbBr₃ PeLEDs without the AAO structure.