Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist

Si-Containing Reverse-Gradient Block Copolymer for Inorganic Pattern Amplification in EUV Lithography

Although extreme ultraviolet lithography (EUVL) has emerged as a leading technology for achieving high quality sub-10 nm patterns, the insufficient pattern height of photoresist patterns remains a challenge. Directed self-assembly (DSA) of block copolymers (BCPs) is expected to be a complementary technology for EUVL due to its ability to form periodic nanostructures. However, for a combination with EUV patterns, it is essential to develop advanced BCP systems that are suited to inorganic-containing EUV photoresists and offer improved resolution limits, pattern quality, and etch resistance. Here, we report a reverse-gradient BCP system, poly[(styrene-gradient-pentafluorostyrene)-b-4-tert-butyldimetilsiloxystyrene] [P(S-g-PFS)-b-P4BDSS] BCP, which enables universally vertically oriented lamellae even in the absence of a neutral layer, while also containing a Si-containing block with high etch resistance. The gradient block, characterized by a gradual compositional transition from the block junction to the tail, plays a crucial role in creating an adequate surface energy contrast that energetically drives the formation of perpendicular lamellae without neutral layer. When used as a pattern height enhancement layer in EUVL, a high aspect ratio (3.29) of patterns was achieved, thereby offering a supplementary solution for next-generation EUVL.

Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV

The dissociative photoionization of phenyl triflate (C6H5OSO2CF3), a neutral photoacid generator used in photolithography, was investigated in a gas phase experiment employing extreme ultraviolet (EUV) synchrotron radiation at 92 eV and photoelectron-photoion coincidence detection. The interaction of EUV photons with the molecule leads almost exclusively to dissociation, which is dominated by a sequential fragmentation mechanism, in which SO2, CF3, CO, and C2H2 are lost. For lithographic purposes, the lack of the observation of a fragment that could serve as a precursor for the formation of triflic acid means that the effective photoacid generator concentration in a photoresist is reduced, impacting its patterning performance in EUV lithography. A better understanding of the dissociative photoionization of photoresist components and proxies thereof can provide a crucial handle that guides the design of photoresists for the upcoming technology nodes with ever decreasing feature sizes for more powerful computer chips.