Anderson GW, Kub FJ, Carruthers TF, Papanicolaou NA, Frankel MY, Katzer DS, Modolo JA, Tseng WF. Planar, Al0.3Ga0.7As-passivated-base, heterojunction bipolar phototransistors.
APPLIED OPTICS 1997;
36:760-764. [PMID:
18250735 DOI:
10.1364/ao.36.000760]
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Abstract
New planar GaAs heterojunction bipolar phototransistors have been designed and demonstrated. The devices use a GaAs/Al(0.3)Ga(0.7) As molecular-beam-epitaxy materials system with an Al(0.3)Ga(0.7) As passivated, 10-nm-thick base; a depleted, high-low emitter; and a low emitter-base capacitance. Electrical contact to the emitter is made by a set of parallel, ohmic fingers and to the collector by an ohmic contact formed in a large, approximately 1.48-microm deep via. Rise times in response to impulse optical excitation at 810 nm were 747-891 ps except at the two lowest optical excitation powers measured. Photocurrent gains measured at 810 and 850 nm were 0.67-19, depending on experimental conditions. These devices are promising for use in heterodyne photodetector arrays for coherent optical processing channelizers requiring a 100-MHz bandwidth.
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