1
|
Ye S, Chu Y, Huang S, Luo Q, Tang S, Xu Z, Liu H, Li C, Jiang C, Wang X, Chen K, Zhang W, Yu R, Gao W. High-efficiency mode-locked erbium-doped ZBLAN fiber laser around 2.8 µm by directly depositing Bi 2S 3 particles onto a cavity mirror. APPLIED OPTICS 2023; 62:2055-2060. [PMID: 37133093 DOI: 10.1364/ao.482243] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Mid-infrared (MIR) pulsed lasers near a 3 µm waveband show great potential for the high absorption of water molecules and many important gas molecules. A passively Q-switched mode-locked (QSML) E r 3+-doped fluoride fiber laser with a low laser threshold and high slope efficiency around a 2.8 µm waveband is reported. The improvement is achieved by depositing bismuth sulfide (B i 2 S 3) particles onto the cavity mirror directly as a saturable absorber and using the cleaved end of the fluoride fiber as output directly. -QSML pulses begin to appear with the pump power of 280 mW. The repetition rate of the QSML pulses reaches a maximum of 33.59 kHz with the pump power of 540 mW. When the pump power is further increased, the output of the fiber laser switches from the QSML to the continuous-wave mode-locked operation with the repetition rate of 28.64 MHz and the slope efficiency of 12.2%. The results indicate that B i 2 S 3 is a promising modulator for the pulsed lasers near a 3 µm waveband, which paves the way for further development of various applications in MIR wavebands, including material processing, MIR frequency combs, and modern healthcare.
Collapse
|
2
|
Guo X, Wang S, Yan P, Wang J, Yu L, Liu W, Zheng Z, Guo C, Ruan S. High Modulation Depth Enabled by Mo2Ti2C3Tx MXene for Q-Switched Pulse Generation in a Mid-Infrared Fiber Laser. NANOMATERIALS 2022; 12:nano12081343. [PMID: 35458051 PMCID: PMC9025076 DOI: 10.3390/nano12081343] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Revised: 03/31/2022] [Accepted: 04/02/2022] [Indexed: 02/04/2023]
Abstract
Two-dimensional (2D) materials show great promise as saturable absorbers (SAs) for ultrafast fiber lasers. However, the relatively low modulation depth and poor stability of some 2D materials, such as graphene and black phosphorus, restrict their applications in the mid-infrared pulse generation. Herein, we first report a novel 2D double transition metal carbide, denoted as Mo2Ti2C3Tx MXene, as the saturable absorber (SA) for a passively Q-switched mid-infrared fiber laser. Due to the unique four-metal atomic layer structure, the Mo2Ti2C3Tx exhibits superior saturable absorption properties, particularly with a higher modulation depth (40% at 2796 nm) than most of the other reported 2D SA materials. After incorporating the MXene SA with an erbium-doped fiber system, the passively Q-switched pulses were achieved with a repetition rate of 157.3 kHz, the shortest pulse width of 370 ns, and single-pulse energy of 1.92 μJ, respectively. Such results extend the MXene-based SAs as promising candidates for advanced photonic devices.
Collapse
Affiliation(s)
- Xin Guo
- Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.G.); (S.W.); (P.Y.); (J.W.); (L.Y.); (S.R.)
| | - Shuai Wang
- Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.G.); (S.W.); (P.Y.); (J.W.); (L.Y.); (S.R.)
- Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen 518118, China
| | - Peiguang Yan
- Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.G.); (S.W.); (P.Y.); (J.W.); (L.Y.); (S.R.)
| | - Jinzhang Wang
- Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.G.); (S.W.); (P.Y.); (J.W.); (L.Y.); (S.R.)
| | - Linpeng Yu
- Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.G.); (S.W.); (P.Y.); (J.W.); (L.Y.); (S.R.)
| | - Wenjun Liu
- State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
| | - Zhijian Zheng
- Shenzhen Institute of Information Technology, Shenzhen 518172, China;
| | - Chunyu Guo
- Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.G.); (S.W.); (P.Y.); (J.W.); (L.Y.); (S.R.)
- Correspondence:
| | - Shuangchen Ruan
- Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.G.); (S.W.); (P.Y.); (J.W.); (L.Y.); (S.R.)
- Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen 518118, China
| |
Collapse
|
3
|
Zheng L, Wei C, Zhou H, Sun F, Gao A, Wang D, Liu Y. Mid-infrared optical switches enabled by metal-organic frameworks for compact high-power nanosecond laser sources at 3 µm. OPTICS EXPRESS 2022; 30:12409-12419. [PMID: 35472877 DOI: 10.1364/oe.455854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2022] [Accepted: 03/16/2022] [Indexed: 06/14/2023]
Abstract
Pulsed lasers operating in the mid-infrared are of great importance for numerous applications in spectroscopy, medical surgery, laser processing, and communications. In spite of recent advances with mid-infrared gain platforms, the lack of a capable pulse generation mechanism hinders the development of compact mid-infrared pulsed laser source. Here we show that MIL-68(Al) and MIL-68(Fe), which are aluminum- and iron- based metal-organic frameworks (MOFs) with ordered atoms distribution and periodic mesoporous structure, constitute exceptional optical switches for the mid-infrared. We fabricated the MIL-68(Al) and MIL-68(Fe) via hydrothermal method and prepared reflection-type MIL-68(Al)- and MIL-68(Fe)- saturable absorber mirrors (SAMs). By employing the as-prepared SAMs in the laser cavities, we achieved high-power nanosecond Q-switched fiber lasers at 2.8 µm. Especially, the average output power and pulse duration of the MIL-68(Al) Q-switched fiber laser reached 809.1 mW and 567 ns, respectively. To the best of our knowledge, this is the first time to demonstrate that MIL-68(M) can be efficient optical switches for 3-µm mid-IR laser pulses generation. Our findings reveal that MIL-68(M) is promising saturable absorber for compact and high-performance mid-infrared pulsed lasers.
Collapse
|
4
|
Jobin F, Paradis P, Aydin YO, Boilard T, Fortin V, Gauthier JC, Lemieux-Tanguay M, Magnan-Saucier S, Michaud LC, Mondor S, Pleau LP, Talbot L, Bernier M, Vallée R. Recent developments in lanthanide-doped mid-infrared fluoride fiber lasers [Invited]. OPTICS EXPRESS 2022; 30:8615-8640. [PMID: 35299310 DOI: 10.1364/oe.450929] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Accepted: 02/18/2022] [Indexed: 06/14/2023]
Abstract
Mid-infrared fiber sources, emitting between 2.5 µm and 5.0 µm, are interesting for their great potential in several application fields such as material processing, biomedicine, remote sensing and infrared countermeasures due to their high-power, their diffraction-limited beam quality as well as their robust monolithic architecture. In this review, we will focus on the recent progress in continuous wave and pulsed mid-infrared fiber lasers and the components that bring these laser sources closer to a field deployment as well as in industrial systems. Accordingly, we will briefly illustrate the potential of such mid-infrared fiber lasers through a few selected applications.
Collapse
|
5
|
Hai T, Xie G, Ma J, Shao H, Qiao Z, Qin Z, Sun Y, Wang F, Yuan P, Ma J, Qian L. Pushing Optical Switch into Deep Mid-Infrared Region: Band Theory, Characterization, and Performance of Topological Semimetal Antimonene. ACS NANO 2021; 15:7430-7438. [PMID: 33754713 DOI: 10.1021/acsnano.1c00842] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The existing pulsed laser technologies and devices are mainly in the infrared spectral region below 3 μm so far. However, longer-wavelength pulsed lasers operating in the deep mid-infrared region (3-20 μm) are desirable for atmosphere spectroscopy, remote sensing, laser lidar, and free-space optical communications. Currently, the lack of reliable optical switches is the main limitation for developing pulsed lasers in the deep mid-infrared region. Here, we demonstrate that topological semimetal antimonene possesses an ultrabroadband optical switch characteristic covering from 2 μm to beyond 10 μm. Especially, the topological semimetal antimonene shows a very low saturable energy fluence (only 3-15 nJ cm-2 beyond 3 μm) and an ultrafast recovery time of ps level. We also demonstrate stable Q-switching in fiber lasers at 2 and 3.5 μm by using topological semimetal antimonene as passive optical switches. Combined with the high environmental stability and easy fabrication, topological semimetal antimonene offers a promising optical switch that extends pulsed lasers into deep mid-infrared region.
Collapse
Affiliation(s)
- Ting Hai
- School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Guoqiang Xie
- School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jie Ma
- Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, 221116, China
| | - Hezhu Shao
- Wenzhou Key Laboratory of Micro-nano Optoelectronic Devices, College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China
| | - Zhen Qiao
- School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhipeng Qin
- School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yue Sun
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Fengqiu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Peng Yuan
- School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jingui Ma
- School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Liejia Qian
- School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China
| |
Collapse
|