Packaging of InGaN stripe-shaped light-emitting diodes

Mini-LEDs with Diffuse Reflection Cavity Arrays and Quantum Dot Film for Thin, Large-Area, High-Luminance Flat Light Source

Mini-light-emitting diodes (mini-LEDs) were combined with multiple three-dimensional (3D) diffuse reflection cavity arrays (DRCAs) to produce thin, large-area, high-brightness, flat light source modules. The curvature of the 3D free-form DRCA was optimized to control its light path; this increased the distance between light sources and reduced the number of light sources used. Experiments with a 12.3-inch prototype indicated that 216 mini-LEDs were required for a 6 mm optical mixing distance to achieve a thin, large-area surface with high brightness, uniformity, and color saturation of 23,044 cd/m2, 90.13%, and 119.2, respectively. This module can serve as the local dimming backlight in next generation automotive displays.

Size-Dependent Quantum Efficiency of Flip-Chip Light-Emitting Diodes at High Current Injection Conditions

Versatile applications call for InGaN-based light-emitting diodes (LEDs) to operate at ultra-high current densities with high quantum efficiency. In this work, we investigated the size-dependent effects of the electrical and optical performance of LEDs as increasing the current density up to 100 A/cm2, which demonstrated that mini-strip flip-chip LEDs were superior option to achieve better performance. In detail, at a current density of 100 A/cm2, the light output power density of these mini-strip LEDs was improved by about 6.1 W/cm2, leading to an improvement in the wall-plug efficiency by 4.23%, while the operating temperature was reduced by 11.3 °C, as compared with the large-sized LEDs. This could be attributed to the increase in the sidewall light extraction, alleviated current crowding effect, and improved heat dissipation. This work suggests an array of mini-strip LEDs would provide an option in achieving higher luminescent efficiency at ultrahigh current injection conditions for various applications.