Thermally stable hybrid cavity laser based on silicon nitride gratings

Inverse-designed silicon nitride reflectors

Reflectors play a pivotal role in silicon photonics since they are used in a wide range of applications, including attenuators, filters, and lasers. This Letter presents six silicon nitride reflectors implemented using the inverse design technique. They vary in footprint, ranging from 4 µm × 3 µm to 4 µm × 8 µm. The smaller device has an average simulated reflectivity of -1.5 dB, whereas the larger one exhibits an average reflectivity of -0.09 dB within the 1530 to 1625 nm range. The latter also presents a 1-dB bandwidth of 172 nm, spanning from 1508 to 1680 nm. Despite their resemblance to circular gratings, these devices are more intricate and compact, particularly due to their non-intuitive features near the input waveguide, which include rough holes and teeth. The roughness of these features significantly contributes to the performance of the devices. The reflectors were fabricated on a silicon nitride multi-project wafer (MPW) through a streamlined process involving only a single etching step. The 4 µm × 8 µm reflector demonstrates a remarkably high reflectivity of -0.26±0.11 dB across the 1530 to 1600 nm range, rendering it suitable for high-quality factor cavities with direct applications in lasers and optical communications.

Research Progress of Wide Tunable Bragg Grating External Cavity Semiconductor Lasers

In this paper, we review the progress of wide tunable Bragg grating external cavity semiconductor lasers (BG-ECSLs). We concentrate on BG-ECSLs based on the wide tunable range for multicomponent detection. Wide tunable BG-ECSLs have many important applications, such as wavelength-division multiplexing (WDM) systems, coherent optical communications, gas detection and atom cooling. Wide tunability, narrow linewidth and a high side-mode suppression ratio BG-ECSLs have attracted much attention for their merits. In this paper, three main structures for achieving widely tunable, narrow linewidth, high side-mode suppression ratio BG-ECSLs are reviewed and compared in detail, such as the volume Bragg grating (VBG) structure, fiber Bragg grating (FBG) structure and waveguide Bragg grating (WBG) structure of ECSLs. The advantages and disadvantages of different structures of BG-ECSLs are analyzed. The results show that WBG-ECSLs are a potential way to realize the integration, small size, wide tuning range, stable spectral output and high side-mode suppression ratio laser output. Therefore, the use of WBG as optical feedback elements is still the mainstream direction of BG-ECSLs, and BG-ECSLs offer a further new option for multicomponent detection and multi-atoms cooling.

Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity

External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications. Additionally, optical injection locking is demonstrated, showing an improvement in the optical linewidth, and an increased stability of the comb spectrum.

Polycrystalline silicon PhC cavities for CMOS on-chip integration

In this work, we present an on-chip 2D and 3D photonics integration solution compatible with Front End of Line integration (FEOL) using deposited polycrystalline silicon (poly:Si) for optical interconnects applications. Deposited silicon integration on a bulk silicon wafer is here discussed in all its processing steps and configurations. Moreover, results of deposited silicon high-Q Photonic Crystal (PhC) resonators are shown, demonstrating the possibility to employ optical resonators patterned on this material in the next generation of 2D and 3D integrated optical interconnects.

High-Q asymmetrically cladded silicon nitride 1D photonic crystals cavities and hybrid external cavity lasers for sensing in air and liquids

In this paper we show a novel design of high Q-factor silicon nitride (SiN) 1D photonic crystal (PhC) cavities side-coupled to curved waveguides, operating with both silica and air cladding. The engineering of the etched 1D PhC cavity sidewalls angle allows for high Q-factors over a wide range of upper cladding compositions, and the achievement of the highest calculated Q-factor for non-suspended asymmetric SiN PhC structures. We show the employment of these type of SiN PhC cavities in hybrid external cavity laser (HECL) configuration, with mode-hop free single mode laser operation over a broad range of injected currents (from 25 mA to 65 mA), milliwatts of power output (up to 9 mW) and side-mode suppression ratios in the range of 40 dB. We demonstrate the operation of these devices as compact and energy efficient optical sensors that respond to refractive index changes in the surrounding medium the measurement of sodium chloride (from 0% to 25%) and sucrose (from 0% to 25%) in aqueous solution. In HECL configuration, the RI sensor exhibits a 2 orders of magnitude improvement in detection limit compared to the passive microcavity. We also discuss the possibility for applying these devices as novel transducers for refractive index changes that are induced by analyte specific absorption of infrared radiation by the target analytes present in gas or liquid phase.

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

Mode selection in InGaAs/InGaAsP quantum well photonic crystal lasers based on coupled double-heterostructure cavities

Photonic crystal lasers with a high-Q factor and small mode volume are ideal light sources for on-chip nano-photonic integration. Due to the submicron size of their active region, it is usually difficult to achieve high output power and single-mode lasing at the same time. In this work, we demonstrate well-selected single-mode lasing in a line-defect photonic crystal cavity by coupling it to the high-Q modes of a short double-heterostructure photonic crystal cavity. One of the FP-like modes of the line-defect cavity can be selected to lase by thermo-optically tuning the high-Q mode of the short cavity into resonance. Six FP-like modes are successively tuned into lasing with side mode suppression ratios all exceeding 15 dB. Furthermore, we show a continuous wavelength tunability of about 10 nm from all the selected modes. The coupled cavity system provides a remarkable platform to explore the rich laser physics through the spatial modulation of vacuum electromagnetic field at submicron scale.

High linear polarization, narrow linewidth hybrid semiconductor laser with an external birefringence waveguide Bragg grating

We demonstrate a high linear polarization, narrow linewidth hybrid laser composed of a semiconductor gain chip and a high birefringence waveguide Bragg grating (WBG). The laser operates in the C-band, and a maximum output power of 8.07 mW is obtained in the fiber waveguide. With careful temperature tuning, the hybrid laser can operate in a single longitudinal mode state from above the threshold current to 410 mA. The side mode suppression ratio (SMSR) reaches a value of 50.2 dB, and the polarization extinction ratio exceeds 39.6 dB. We numerically analyze the linewidth suppression for the Bragg grating based on adiabatic chirp theory. The hybrid laser shows a narrow linewidth of 4.15 kHz and a low relative intensity noise (RIN) of <-155 dBc/Hz, providing a high-performance light source for coherent light communication.

Frequency modulated hybrid photonic crystal laser by thermal tuning

We demonstrate frequency modulation (FM) in an external cavity (EC) III-V/silicon laser, comprising a reflective semiconductor optical amplifier (RSOA) and a silicon nitride (SiN) waveguide vertically coupled to a 2D silicon photonic crystal (PhC) cavity. The PhC cavity acts as a tunable narrowband reflector giving wavelength selectivity. The FM was achieved by thermo-optical modulation of the reflector via a p-n junction. Single-mode operation was ensured by the short cavity length, overlapping only one longitudinal laser mode with the reflector. We investigate the effect of reflector modulation theoretically and experimentally and predict a substantial tracking of the resonator by the laser frequency with very small intensity modulation (IM).

A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.