Laser damage resistance of RbTiOPO(4): evidence of polarization dependent anisotropy

Plasmonic enhancement of second harmonic generation from nonlinear RbTiOPO4 crystals by aggregates of silver nanostructures

We demonstrate a 60-fold enhancement of the second harmonic generation (SHG) response at the nanoscale in a hybrid metal-dielectric system. By using complex silver nanostructures photochemically deposited on the polar surface of a ferroelectric crystal, we tune the plasmonic resonances from the visible to the near-infrared (NIR) spectral region, matching either the SH or the fundamental frequency. In both cases the SHG signal at the metal-dielectric interface is enhanced, although with substantially different enhancement values: around 5 times when the plasmonic resonance is at the SH frequency or up to 60 times when it matches the fundamental NIR radiation. The results are consistent with the more spatially-extended near-field response of complex metallic nanostructures and can be well explained by taking into account the quadratic character of the SHG process. The work points out the potential of aggregates of silver nanostructures for enhancing optical nonlinearities at the nanoscale and provides an alternative approach for the development of nanometric nonlinear photonic devices in a scalable way.

A high accuracy femto-/picosecond laser damage test facility dedicated to the study of optical thin films

A laser damage test facility delivering pulses from 100 fs to 3 ps and designed to operate at 1030 nm is presented. The different details of its implementation and performances are given. The originality of this system relies the online damage detection system based on Nomarski microscopy and the use of a non-conventional energy detection method based on the utilization of a cooled CCD that offers the possibility to obtain the laser induced damage threshold (LIDT) with high accuracy. Applications of this instrument to study thin films under laser irradiation are presented. Particularly the deterministic behavior of the sub-picosecond damage is investigated in the case of fused silica and oxide films. It is demonstrated that the transition of 0-1 damage probability is very sharp and the LIDT is perfectly deterministic at few hundreds of femtoseconds. The damage process in dielectric materials being the results of electronic processes, specific information such as the material bandgap is needed for the interpretation of results and applications of scaling laws. A review of the different approaches for the estimation of the absorption gap of optical dielectric coatings is conducted and the results given by the different methods are compared and discussed. The LIDT and gap of several oxide materials are then measured with the presented instrument: Al(2)O(3), Nb(2)O(5), HfO(2), SiO(2), Ta(2)O(5), and ZrO(2). The obtained relation between the LIDT and gap at 1030 nm confirms the linear evolution of the threshold with the bandgap that exists at 800 nm, and our work expands the number of tested materials.

Nanosecond-laser-induced damage in potassium titanyl phosphate: pure 532 nm pumping and frequency conversion situations

Nanosecond-laser-induced damage measurements in the bulk of KTiOPO4 (KTP) crystals are reported using incident 532 nm light or using incident 1064 nm light, which pumps more or less efficient second harmonic generation. No damage threshold fatigue effect is observed with pure 532 nm irradiation. The damage threshold of Z-polarized light is higher than the one for X- or Y-polarized light. During frequency doubling, the damage threshold was found to be lower than for pure 1064 or 532 nm irradiation. More data to quantify the cooperative damage mechanism were generated by performing fluence ramp experiments with varying conditions and monitoring the conversion efficiency. All damage thresholds plotted against the conversion efficiency align close to a characteristic curve.

Multiple pulse nanosecond laser induced damage study in LiB3O5 crystals

Multiple pulse nanosecond laser induced damage in the bulk of LiB3O5 (LBO) crystals was investigated at 1064 nm, 532 nm and 355 nm. Scanning electron microscopy of cleaved damage sites confirmed the presence of different zones that have already been reported in the case of KH2PO4 (KDP). Multi pulse measurements reveal a strong decrease of the damage threshold with increasing pulse number at 1064 nm (fatigue effect). A weaker fatigue effect was observed at 532 nm and no fatigue effect was found at 355 nm. This observation is best explained by an inherently statistical light matter interaction generating laser induced damage. Finally, a polarization dependent damage threshold anisotropy was evidenced at all three wavelengths, being strongest at 1064 nm. The results indicate the importance of Li+ vacancy stabilized color centers for the damage mechanism.

Laser-induced damage of KDP crystals by 1omega nanosecond pulses: influence of crystal orientation

We investigate the influence of THG-cut KDP crystal orientation on laser damage at 1064 nm under nanosecond pulses. Since laser damage is now assumed to initiate on precursor defects, this study makes a connection between these nanodefects (throughout a mesoscopic description) and the influence of their orientation on laser damage. Some investigations have already been carried out in various crystals and particularly for KDP, indicating propagation direction and polarization dependences. We performed experiments for two orthogonal positions of the crystal and results clearly indicate that KDP crystal laser damage depends on its orientation. We carried out further investigations on the effect of the polarization orientation, by rotating the crystal around the propagation axis. We then obtained the evolution of the damage probability as a function of the rotation angle. To account for these experimental res ts, we propose a laser damage model based on ellipsoid-shaped defects. This modeling is a refined implementation of the DMT model (Drude Mie Thermal) [Dyan et al., J. Opt. Soc. Am. B 25, 1087-1095 (2008)], by introducing absorption efficiency calculations for an ellipsoidal geometry. Modeling simulations are in good agreement with experimental results.

Nanosecond laser induced damage in RbTiOPO4: the missing influence of crystal quality

Nanosecond laser induced damage in RbTiOPO(4) (RTP) an isomorphic material to the more widely known KTiOPO(4) (KTP) is studied in crystals with varying properties. The ionic conductivity along the z-axes of the tested crystals ranged from 1.5 10(-9) S/cm to 1.1 10(-12) S/cm. Further, different growth sectors with different absorption in the range of hundreds of ppm/cm and differing zones in inhomogeneous crystals have been investigated. Despite these important differences in crystal quality, no significant difference could be observed in the laser damage resistance at 1064 nm. Thus growth induced defects only play a minor role in nanosecond laser induced damage in RTP. Transient, laser induced defects are discussed in analogy with KTP as possible laser damage precursors.

Laser-induced damage investigation at 1064 nm in KTiOPO4 crystals and its analogy with RbTiOPO4

Bulk laser-induced damage at 1064 nm has been investigated in KTiOPO4 (KTP) and RbTiOPO4 (RTP) crystals with a nanosecond pulsed Nd:YAG laser. Both crystals belong to the same family. Throughout this study, their comparison shows a very similar laser-damage behavior. The evolution of the damage resistance under a high number of shots per site (10,000 shots) reveals a fatigue effect of KTP and RTP crystals. In addition, S-on-1 damage probability curves have been measured in both crystals for all combinations of polarization and propagation direction aligned with the principal axes of the crystals. The results show an influence of the polarization on the laser-induced damage threshold (LIDT), with a significantly higher threshold along the z axis, whereas no effect of the propagation direction has been observed. This LIDT anisotropy is discussed with regard to the crystallographic structure.

Annealing effect on mono-mode refractive index enhanced RbTiOPO4 waveguides formed by ion implantation

We reported on the annealing features of the RbTiOPO4 planar waveguides fabricated by 6.0 MeV C3+ ion implantation. The thermal stability of the ion-implanted RbTiOPO4 waveguide was investigated by annealing at different temperatures ranging from 260 degrees C to 650 degrees C. Results revealed that when temperatures are higher than 550 degrees C, annealing caused the refractive indices of both ny and nz a saturation behavior. An increase of the ny refractive index in waveguide region was observed after proper annealing. The low loss planar mono-mode waveguides have been achieved in RbTiOPO4 crystals by applying appropriate ion implantation and annealing conditions.