Spontaneous emission in GaN/InGaN photonic crystal nanopillars

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.

Optimized emission in nanorod arrays through quasi-aperiodic inverse design

We investigate a new class of quasi-aperiodic nanorod structures for the enhancement of incoherent light emission. We identify one optimized structure using an inverse design algorithm and the finite-difference time-domain method. We carry out emission calculations on both the optimized structure as well as a simple periodic array. The optimized structure achieves nearly perfect light extraction while maintaining a high spontaneous emission rate. Overall, the optimized structure can achieve a 20%-42% increase in external quantum efficiency relative to a simple periodic design, depending on material quality.

Photonic crystal light-emitting sources

Photonic crystals (PhCs) are periodically structured optical media offering the opportunity for spontaneous emission (SpE) to be strongly controlled in spatial terms (directions) or in absolute terms (rates). We discuss the application of this concept for practical light-emitting sources, summarizing the principles and actual merits of various approaches based on two- and three-dimensional PhCs. We take into consideration the numerous constraints on real-world light-emitting structures and materials. The various mechanisms through which modified photonic bands and band gaps can be used are first revisited in view of their use in light sources. We then present an in-depth discussion of planar emitters and enhanced extraction of light thanks to grating diffraction. Applications to conventional III-V semiconductors and to III-nitrides are reviewed. Comparison with random surface roughening reveals some common physical limitations. Some advanced approaches with complex structures or etched active structures are also discussed. Finally, the most promising mechanism to enhance the SpE rate, the Purcell effect, is considered. Its implementation, including through plasmonic effects, is shown to be effective only for very specific sources. We conclude by outlining the mix of physics and material parameters needed to grasp the relevant issues.

Controlling the directional emission of light by periodic arrays of heterostructured semiconductor nanowires

We demonstrate experimentally the directional emission of light by InAsP segments embedded in InP nanowires. The nanowires are arranged in a periodic array, forming a 2D photonic crystal slab. The directionality of the emission is interpreted in terms of the preferential decay of the photoexcited nanowires and the InAsP segments into Bloch modes of the periodic structure. By simulating the emission of arrays of nanowires with the emitting segments located at different heights, we conclude that the position of this active region strongly influences the directionality and efficiency of the emission. Our results will help to improve the design of nanowire based LEDs and single photon sources.

Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals

Far-field distributions of GaN-based photonic crystal (PhC) film-transferred light-emitting diodes (FT-LEDs) were investigated. The thickness of the device is about 840 nm. The emission wavelength is around 520 nm. The PhC region is a square lattice with a/lambda around 0.5. Angular-resolved measurements in the Gamma-X and Gamma-M directions were made in the polarized-resolved manner. Guided mode extraction behavior in agreement with the two-dimensional free-photon band calculation was observed. In addition, the pseudo-TM behavior for the non-collinearly coupled modes was observed. The azimuthal-mapping of the angular-resolved spectra revealed the evolution of the collinearly and the non-collinearly coupled modes. Furthermore, the light enhancement of approximately 2.7x and the collimation angle about 102.3 degrees were achieved.