Laser damage performance of KD2-chiHchiPO4 crystals following X-ray irradiation

Laser damage dependence on the size and concentration of precursor defects in KDP crystals: view through differently sized filter pores

We investigate the laser-induced damage performance at 1064 nm of potassium dihydrogen phosphate (KDP) crystals grown using filters of different pore sizes. The aim is to explore a novel method for understanding laser-matter interactions with regard to physical parameters affecting the ability of damage precursors to initiate damage. By reducing the pore size of filters in continuous filtration growth, we can improve laser damage resistance. Furthermore, we develop a model based on a Gaussian distribution of precursor thresholds and heat transfer to obtain a size distribution of the precursor defects. Smaller size and/or lower concentration of precursor defects could lead to better damage resistance.

Effects of γ-ray irradiation on optical absorption and laser damage performance of KDP crystals containing arsenic impurities

The effects of γ-irradiation on potassium dihydrogen phosphate crystals containing arsenic impurities are investigated with different optical diagnostics, including UV-VIS absorption spectroscopy, photo-thermal common-path interferometer and photoluminescence spectroscopy. The optical absorption spectra indicate that a new broad absorption band near 260 nm appears after γ-irradiation. It is found that the intensity of absorption band increases with the increasing irradiation dose and arsenic impurity concentration. The simulation of radiation defects show that this absorption is assigned to the formation of AsO₄⁴⁻ centers due to arsenic ions substituting for phosphorus ions. Laser-induced damage threshold test is conducted by using 355 nm nanosecond laser pulses. The correlations between arsenic impurity concentration and laser induced damage threshold are presented. The results indicate that the damage performance of the material decreases with the increasing arsenic impurity concentration. Possible mechanisms of the irradiation-induced defects formation under γ-irradiation of KDP crystals are discussed.

Investigation of the electronic and physical properties of defect structures responsible for laser-induced damage in DKDP crystals

Laser-induced damage at near operational laser excitation conditions can limit the performance of potassium dihydrogen phosphate (KH(2)PO(4), or KDP) and its deuterated analog (DKDP) which are currently the only nonlinear optical materials suitable for use in large-aperture laser systems. This process has been attributed to pre-existing damage precursors that were incorporated or formed during growth that have not yet been identified. In this work, we present a novel experimental approach to probe the electronic structure of the damage precursors. The results are modeled assuming a multi-level electronic structure that includes a bottleneck for 532 nm excitation. This model reproduces our experimental observations as well as other well-documented behaviors of laser damage in KDP crystals. Comparison of the electronic structure of known defects in KDP with this model allows for identification of a specific class that we postulate may be the constituent defects in the damage precursors. The experimental results also provide evidence regarding the physical parameters affecting the ability of individual damage precursors to initiate damage, such as their size and defect density; these parameters were found to vary significantly between KDP materials that exhibit different damage performance characteristics.