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Mao Y, Xie X, Song C, Lu Z, Poole PJ, Liu J, Toreja M, Qi Y, Liu G, Barrios P, Poitras D, Weber J, Zhao P, Vachon M, Rahim M, Ma P, Chen S, Atieh A. Performance Investigations of InAs/InP Quantum-Dash Semiconductor Optical Amplifiers with Different Numbers of Dash Layers. MICROMACHINES 2023; 14:2230. [PMID: 38138398 PMCID: PMC10745715 DOI: 10.3390/mi14122230] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 12/04/2023] [Accepted: 12/09/2023] [Indexed: 12/24/2023]
Abstract
We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest amplified spontaneous emission power (4.3 dBm) and chip gain (26.4 dB) at 1550 nm, with a 300 mA CW bias current and at 25 °C temperature, while SOAs with fewer Qdash layers (for example, three-layer Qdash SOA), had a wider ASE bandwidth (90 nm) and larger 3 dB gain saturated output power (18.2 dBm) in a shorter wavelength range. The noise figure (NF) of the SOAs increased nearly linearly with the number of Qdash layers. The longest gain peak wavelength of 1570 nm was observed for the 12-layer Qdash SOA. The most balanced performance was obtained with a five-layer Qdash SOA, with a 25.4 dB small-signal chip gain, 15.2 dBm 3 dB output saturated power, and 5.7 dB NF at 1532 nm, 300 mA and 25 °C. These results are better than those of quantum well SOAs reported in a recent review paper. The high performance of InAs/InP Qdash SOAs with different Qdash layers shown in this paper could be important for many applications with distinct requirements under uncooled scenarios.
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Affiliation(s)
- Youxin Mao
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Xiaoran Xie
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Chunying Song
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Zhenguo Lu
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Philip J. Poole
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Jiaren Liu
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Mia Toreja
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Yang Qi
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Guocheng Liu
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Pedro Barrios
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Daniel Poitras
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - John Weber
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Ping Zhao
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Martin Vachon
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Mohamed Rahim
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Penghui Ma
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Silas Chen
- Advanced Electronics and Photonics Research Centre, National Research Council, Ottawa, ON K1A 0R6, Canada; (X.X.); (C.S.); (Z.L.); (P.J.P.); (J.L.); (M.T.); (Y.Q.); (G.L.); (P.B.); (D.P.); (P.Z.); (M.V.); (M.R.); (P.M.)
| | - Ahmad Atieh
- Optiwave Systems Inc., 7 Capella Court, Suite 300, Ottawa, ON K1N 6N5, Canada;
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Eyal O, Willinger A, Banyoudeh S, Schanbel F, Sichkovskyi V, Mikhelashvili V, Reithmaier JP, Eisenstein G. Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures. OPTICS EXPRESS 2017; 25:27262-27269. [PMID: 29092203 DOI: 10.1364/oe.25.027262] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2017] [Accepted: 10/16/2017] [Indexed: 06/07/2023]
Abstract
We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain wavelength at a rate of 0.78 nm/K is observed. Consequently, two possible modes of operation are performed for a systematic device characterization over the entire temperature range. In the first mode, the signal wavelength is tuned to always match the peak gain wavelength while in the second mode, the signal wavelength is kept constant as the gain spectrum shifts with the temperature. Static characteristics, such as gain spectra and saturation levels, as well as dynamical properties, are presented. Distortion-less amplification of a single 28 Gbit/s signal and cross-talk free amplification of two channels, detuned by 2 nm, were demonstrated over the entire temperature range.
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Capua A, Karni O, Eisenstein G, Reithmaier JP, Yvind K. Extreme nonlinearities in InAs/InP nanowire gain media: the two-photon induced laser. OPTICS EXPRESS 2012; 20:5987-5992. [PMID: 22418475 DOI: 10.1364/oe.20.005987] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We demonstrate a novel laser oscillation scheme in an InAs / InP wire-like quantum dash gain medium. A short optical pulse excites carriers by two photon absorption which relax to the energy levels providing gain thereby enabling laser oscillations. The nonlinear dynamic interaction is analyzed and quantified using multi-color pump-probe measurements and shows a highly efficient nonlinear two photon excitation process which is larger by more than an order of magnitude compared to common quantum well and bulk gain media. The dynamic response of the nonlinearly induced laser line is characterized by spectrally resolved temporal response measurements, while changes incurring upon propagation in the stimulating short pulse itself are characterized by frequency resolved optical gating (FROG).
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Affiliation(s)
- Amir Capua
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
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Meuer C, Schmidt-Langhorst C, Schmeckebier H, Fiol G, Arsenijević D, Schubert C, Bimberg D. 40 Gb/s wavelength conversion via four-wave mixing in a quantum-dot semiconductor optical amplifier. OPTICS EXPRESS 2011; 19:3788-3798. [PMID: 21369203 DOI: 10.1364/oe.19.003788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
The static and dynamic characteristics of degenerate four-wave mixing in a quantum dot semiconductor optical amplifier are investigated. A high chip conversion efficiency of 1.5 dB at 0.3 nm detuning, a low (< 5 dB) asymmetry of up and down conversion and a spectral conversion range of 15 nm with an optical signal-to-noise ratio above 20 dB is observed. The comparison of pumping near the gain peak and at the edge of the gain spectrum reveals the optical signal-to-noise ratio as the crucial parameter for error-free wavelength conversion. Small-signal bandwidths well beyond 40 GHz and 40 Gb/s error-free 5 nm wavelength down conversion with penalties below 1 dB are presented. Due to the optical signal-to-noise ratio limitation, wavelength up conversion is error-free at a pump wavelength of 1311 nm with a penalty of 2.5 dB, whereas an error floor is observed for pumping at 1291 nm. A dual pump configuration is demonstrated, to extend the wavelength conversion range enabling 15.4 nm error-free wavelength up conversion with 3.5 dB penalty caused by the additional saturation of the second pump. This is the first time that 40 Gb/s error-free wavelength conversion via four-wave mixing in quantum-dot semiconductor optical amplifiers is presented.
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Affiliation(s)
- Christian Meuer
- Institut fuer Festkoerperphysik, Technische Universitaet Berlin, EW 5-2, Hardenbergstr. 36, 10623 Berlin, Germany.
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