Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes

Tuning the deposition parameters for optimizing the faradaic and non-faradaic electrochemical performance of nanowire array-shaped ITO electrodes prepared by electron beam evaporation

Nanostructured indium tin oxide (ITO) surfaces present an interesting yet unusual combination of properties (high electrical conductivity and optical transparency) at a high surface-to-volume ratio. Thus, previous studies presented nanostructured ITO electrodes as potentially suitable platforms for electrochemical biosensors, but still there is a lack of research on the optimization of preparation methods for such electrodes. We present a systematic study on the properties of nanostructured ITO electrodes prepared by physical deposition, where the substrate temperature was tuned for achieving the best combination of structural properties (namely electrical conductivity and optical transparency) and electrochemical performance. Analysis of faradaic cyclic voltammetry (CV) was performed to determine the electroactive surface area of the samples, and these results were benchmarked against those obtained by non-faradaic CV and Mott-Schottky (MS) analysis. The latter was useful to determine the dependence of some intrinsic features of the semiconductor on the substrate temperature during deposition. The results show that, out of a wide temperature range covering from 200 °C to 500 °C, there is a two-phase temperature-dependent growth, explained by the Stranski-Krastanov and self-catalytic vapor-liquid-solid (VLS) methods, and, on the other hand, that there is an optimal growth temperature at 300 °C that maximizes the electroactive surface area and sensitivity. This means that cost-effective electrodes can be prepared at low temperatures outperforming in terms of electroactive surface area, surface capacitance and sensitivity. As a proof-of-concept, nanostructured ITO electrodes were electrochemically derivatized with aryl diazonium salts (as a first step towards biochemical functionalization), and the performance of the optimized electrodes was tested in a real scenario.

Nanostructured as-deposited indium tin oxide thin films for broadband antireflection and light trapping

Indium tin oxide (ITO) thin films were sputter-deposited at ambient temperature on a glass-like substrate that was periodically nanostructured by UV nanoimprint lithography. Cross gratings of the corrugated and conformal ITO, with different periods and modulation depths, were tailored to exhibit light trapping or antireflection properties at specific spectral windows by combined optical simulations and experiments. For dense gratings, the light transmission in the 450-850 nm range was enhanced by 8% (absolute) compared to flat ITO films, which is one of the largest performance improvements reported in the literature for nanostructured transparent electrodes. Increasing the grating period shifts the threshold for diffraction coupling to waveguide modes in the visible and near infrared part of the spectrum, resulting in broad light trapping behaviour at wavelengths below this threshold. This work demonstrates a simple processing route at ambient temperature for the fabrication of high-performance transparent electrodes in order to fulfil different device requirements.

Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer

Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. Recently, EDL TFTs gated with radio frequency (RF) magnetron sputtered SiO₂ have been developed which is compatible to large-area electronics fabrication. In this work, fully transparent Indium-Gallium-Zinc-Oxide-based EDL TFTs on glass substrates have been fabricated at room temperature for the first time. A maximum transmittance of about 80% has been achieved in the visible light range. The transparent TFTs show a low operation voltage of 1.5 V due to the large EDL capacitance (0.3 µF/cm² at 20 Hz). The devices exhibit a good performance with a low subthreshold swing of 130 mV/dec and a high on-off ratio > 10⁵. Several tests have also been done to investigate the influences of light irradiation and bias stress. Our results suggest that such transistors might have potential applications in battery-powered transparent electron devices.

Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by annealing in oxygen

Indium tin oxide (ITO)/ indium oxide (In_xO) double layer structure was adopted as the transparent conduction and light scattering function layer to improve the light extraction efficiency of the GaN-based blue LEDs. The double layer structure was first deposited in one run by electron beam evaporation using ITO and Indium as the source respectively, and then annealed in an oxygen environment. This method can fabricate transparent electrode with microstructure and low specific contact resistivity one time free from lithography and etching, which makes the fabrication process simple and at a ower cost. For the 220 nm ITO/ 170 nm In_xO double layer sample annealed at 600°C for 15 min in oxygen, measurement results show that its root mean square of roughness of the surface microstructure can be as high as 85.2 nm which introduces the strongest light scattering. Its light transmittance at 450 nm can maintain 92.4%. At the same time, it can realize lower specific contact resistivity with p-InGaN. Compared with the GaN-based blue LEDs with only 220 nm ITO electrode, the light output power of the LEDs with 220 nm ITO/ 170 nm In_xO double layer structure can be increased about 58.8%, and working voltage at 20 mA injection current is decreased about 0.23 V due to the enhanced current spreading capability. The light output power improvement is also theoretically convinced by finite difference time domain simulations.

Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode

The combined effects of a few mechanisms for emission efficiency enhancement produced in the overgrowth of the transparent conductor layer of Ga-doped ZnO (GaZnO) on a surface Ag-nanoparticle (NP) coated light-emitting diode (LED), including surface plasmon (SP) coupling, current spreading, light extraction, and contact resistivity reduction, are demonstrated. With a relatively higher GaZnO growth temperature (350 °C), melted Ag NPs can be used as catalyst for forming GaZnO nanoneedles (NNs) through the vapor-liquid-solid growth mode such that light extraction efficiency can be increased. Meanwhile, residual Ag NPs are buried in a simultaneously grown GaZnO layer for inducing SP coupling. With a relatively lower GaZnO growth temperature (250 °C), all the Ag NPs are preserved for generating a stronger SP coupling effect. By using a thin annealed GaZnO interlayer on p-GaN before Ag NP fabrication, the contact resistivity at the GaZnO/p-GaN interface and hence the overall device resistance can be reduced. Although the use of this interlayer blue-shifts the localized surface plasmon resonance peak of the fabricated Ag NPs from the quantum well emission wavelength of the current study (535 nm) such that the SP coupling effect becomes weaker, it is useful for enhancing the SP coupling effect in an LED with a shorter emission wavelength.

Efficiency enhancement in polymer light-emitting diodes via embedded indium-tin-oxide nanorods

Indium-tin-oxide (ITO) nanorods were fabricated in 10 min from commercially available ITO substrate using wet chemical etching method. The optical properties of the ITO nanorods were investigated using transmission spectroscopy and dark-field optical microscopy. The transmittance and light-scattering characteristics of the ITO nanorods were better than those of ITO film. The ITO nanorod layer was further used as a transparent anode in polymer light-emitting diodes (PLEDs). The brightness and current efficiency of the PLED with the ITO nanorod layer were enhanced. This performance enhancement can be attributed to the excellent optical and electrical properties of the ITO nanorod layer.

Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes

A new approach to surface roughening was established and optimized in this paper for enhancing the light extraction of high power AlGaInP-based LEDs, by combining ultraviolet (UV) assisted imprinting with dry etching techniques. In this approach, hexagonal arrays of cone-shaped etch pits are fabricated on the surface of LEDs, forming gradient effective-refractive-index that can mitigate the emission loss due to total internal reflection and therefore increase the light extraction efficiency. For comparison, wafer-scale FLAT-LEDs without any surface roughening, WET-LEDs with surface roughened by wet etching, and DRY-LEDs with surface roughened by varying the dry etching time of the AlGaInP layer, were fabricated and characterized. The average output power for wafer-scale FLAT-LEDs, WET-LEDs, and DRY3-LEDs (optimal) at 350 mA was found to be 102, 140, and 172 mW, respectively, and there was no noticeable electrical degradation with the WET-LEDs and DRY-LEDs. The light output was increased by 37.3% with wet etching, and 68.6% with dry etching surface roughening, respectively, without compromising the electrical performance of LEDs. A total number of 1600 LED chips were tested for each type of LEDs. The yield of chips with an optical output power of 120 mW and above was 0.3% (4 chips), 42.8% (684 chips), and 90.1% (1441 chips) for FLAT-LEDs, WET-LEDs, and DRY3-LEDs, respectively. The dry etching surface roughening approach developed here is potentially useful for the industrial mass production of wafer-scale high power LEDs.

Voltage-controlled liquid-crystal terahertz phase shifter with indium-tin-oxide nanowhiskers as transparent electrodes

Indium-tin-oxide nanowhiskers were employed as transparent electrodes in a liquid-crystal terahertz phase shifter. Transmittance of the device was as high as ∼75%. Phase shift exceeding π/2 at 1.0 THz is achieved in a ∼500  μm-thick cell. The driving voltage required for the device operating as a quarter-wave plate was as low as 17.68 V (rms), an improvement of nearly an order of magnitude over previous work.

Enhanced optical output power of blue light-emitting diodes with quasi-aligned gold nanoparticles

The output power of the light from GaN-based light-emitting diodes (LEDs) was enhanced by fabricating gold (Au) nanoparticles on the surface of p-GaN. Quasi-aligned Au nanoparticle arrays were prepared by depositing Au thin film on an aligned suspended carbon nanotube thin film surface and then putting the Au-CNT system on the surface of p-GaN and thermally annealing the sample. The size and position of the Au nanoparticles were confined by the carbon nanotube framework, and no other additional residual Au was distributed on the surface of the p-GaN substrate. The output power of the light from the LEDs with Au nanoparticles was enhanced by 55.3% for an injected current of 100 mA with the electrical property unchanged compared with the conventional planar LEDs. The enhancement may originate from the surface plasmon effect and scattering effect of the Au nanoparticles.

Indium-tin-oxide nanorods for efficient light trapping in polymer solar cells

Nanorods of indium-tin-oxide were used to enhance the performance of polymer solar cells.

Broadband terahertz conductivity and optical transmission of indium-tin-oxide (ITO) nanomaterials

Indium-tin-oxide (ITO) nanorods (NRs) and nanowhiskers (NWhs) were fabricated by an electron-beam glancing-angle deposition (GLAD) system. These nanomaterials are of interests as transparent conducting electrodes in various devices. Two terahertz (THz) time-domain spectrometers (TDS) with combined spectral coverage from 0.15 to 9.00 THz were used. These allow accurate determination of the optical and electrical properties of such ITO nanomaterials in the frequency range from 0.20 to 4.00 THz. Together with Fourier transform infrared spectroscopic (FTIR) measurements, we found that the THz and far-infrared transmittance of these nanomaterials can be as high as 70% up to 15 THz, as opposed to about 9% for sputtered ITO thin films. The complex conductivities of ITO NRs, NWhs as well films are well fitted by the Drude-Smith model. Taking into account that the volume filling factors of both type of nanomaterials are nearly same, mobilities, and DC conductivities of ITO NWhs are higher than those of NRs due to less severe carrier localization effects in the former. On the other hand, mobilities of sputtered ITO thin films are poorer than ITO nanomaterials because of larger concentration of dopant ions in films, which causes stronger carrier scattering. We note further that consideration of the extreme values of Re{σ} and Im{σ} as well the inflection points, which are functions of the carrier scattering time (τ) and the expectation value of cosine of the scattering angle (γ), provide additional criteria for accessing the accuracy of the extraction of electrical parameters of non-Drude-like materials using THz-TDS. Our studies so far indicate ITO NWhs with heights of ~1000 nm show outstanding transmittance and good electrical characteristics for applications such as transparent conducting electrodes of THz Devices.

Epitaxial growth of visible to infra-red transparent conducting In2O3 nanodot dispersions and reversible charge storage as a Li-ion battery anode

Unique bimodal distributions of single crystal epitaxially grown In2O3 nanodots on silicon are shown to have excellent IR transparency greater than 87% at IR wavelengths up to 4 μm without sacrificing transparency in the visible region. These broadband antireflective nanodot dispersions are grown using a two-step metal deposition and oxidation by molecular beam epitaxy, and backscattered diffraction confirms a dominant (111) surface orientation. We detail the growth of a bimodal size distribution that facilitates good surface coverage (80%) while allowing a significant reduction in In2O3 refractive index. This unique dispersion offers excellent surface coverage and three-dimensional volumetric expansion compared to a thin film, and a step reduction in refractive index compared to bulk active materials or randomly porous composites, to more closely match the refractive index of an electrolyte, improving transparency. The (111) surface orientation of the nanodots, when fully ripened, allows minimum lattice mismatch strain between the In2O3 and the Si surface. This helps to circumvent potential interfacial weakening caused by volume contraction due to electrochemical reduction to lithium, or expansion during lithiation. Cycling under potentiodynamic conditions shows that the transparent anode of nanodots reversibly alloys lithium with good Coulombic efficiency, buffered by co-insertion into the silicon substrate. These properties could potentially lead to further development of similarly controlled dispersions of a range of other active materials to give transparent battery electrodes or materials capable of non-destructive in situ spectroscopic characterization during charging and discharging.

Solution-processed Li-Al layered-double-hydroxide platelet structures for high efficiency InGaN light emitting diodes

High-oriented Li-Al layered double hydroxide (LDH) films were grown on an InGaN light-emitting diode (LED) structures by immersing in an aqueous alkaline Al(3+)- and Li+-containing solution. The stand upward and adjacent Li-Al LDH platelet structure was formed on the LED structure as a textured film to increase the light extraction efficiency. The light output power of the LED structure with the Li-Al LDH platelet structure had a 31% enhancement compared with a conventional LED structure at 20 mA. The reverse leakage currents, at -5V, were measured at -2.3 × 10(-8) A and -1.0 × 10(-10)A for the LED structures without and with the LDH film that indicated the Li-Al LDH film had the insulated property acted a passivation layer that had potential to replace the conventional SiO2 and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet structure and the insulated property covering whole the LED surface that has potential for high efficiency InGaN LED applications.

Indium tin oxide nanowhisker morphology control by vapour-liquid-solid glancing angle deposition

A new growth technique for indium tin oxide nanowhiskers with increased control over feature size and spacing is reported. The technique is based on a unique combination of self-catalysed vapour-liquid-solid (VLS) growth and glancing angle deposition (GLAD). This VLS-GLAD technique provides enhanced control over nanowhisker morphology as the effect of typical VLS growth parameters (e.g. flux rate, temperature) is amplified at large deposition angles characteristic of GLAD. Spatial modulation of the collimated growth flux controls trunk width, number and orientation of branches, and overall nanowhisker density. Here we report the influence of growth conditions (including deposition angle, flux rate, nominal pitch and substrate temperature) on nanowhisker morphology, with specific focus on the effect of large deposition angles. Sheet resistance and transmission of the films were measured to characterize their performance as transparent conductive oxides. Hybrid nanostructured films grown in this study include high surface area nanowhiskers protruding from a conductive film, ideal for transparent conductive electrode applications.

Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes

We investigate the effects of the refractive index of the encapsulant on the light-extraction efficiency (LEE) of light-emitting diodes (LEDs) for GaN LEDs (n ≈ 2.5) and AlGaInP LEDs (n ≈ 3.0). For non-absorbing rectangular parallelepiped LED chips, as the refractive index of the encapsulant increases, the LEE first increases quasi-linearly, then increases sub-linearly, and finally a saturation is reached. Furthermore, LEDs with a dual-layer graded-refractive-index (GRIN) encapsulant (n(encapsulant 1) = 1.57 and n(encapsulant 2) = 1.41) is fabricated through a two-step curing process. We demonstrate that such an LED further enhances the LEE by reducing Fresnel reflection loss at the encapsulant/air interface by 35% compared with an LED encapsulated with a single-layer encapsulant (n(encapsulant) = 1.57).

Enhanced angular characteristics of indium tin oxide nanowhisker-coated silicon solar cells

Omnidirectional and broadband light harvesting is critical to photovoltaics due to the sun's movement and its wide spectral range of radiation. In this work, we demonstrate distinctive indium-tin-oxide nanowhiskers that achieve superior angular and spectral characteristics for crystalline silicon solar cells using angle-resolved reflectance spectroscopy. The solar-spectrum weighted reflectance is well below 6% for incident angles of up to 70° and for the wavelength range between 400nm and 1000nm. As a result, the nanowhisker coated solar cell exhibits broadband quantum efficiency characteristics and enhanced short-circuit currents for large angles of incidence.

Combined micro- and nano-scale surface textures for enhanced near-infrared light harvesting in silicon photovoltaics

As silicon photovoltaics evolve towards thin-wafer technologies, efficient optical absorption for the near-infrared wavelengths has become particularly challenging. In this work, we present a solution that employs combined micro- and nano-scale surface textures to increase light harvesting in the near-infrared for crystalline silicon photovoltaics, and discuss the associated antireflection and scattering mechanisms. The surface textures are achieved by uniformly depositing a layer of indium-tin-oxide nanowhiskers on micro-grooved silicon substrates using electron-beam evaporation. The nanowhiskers facilitate optical transmission in the near-infrared by functioning as impedance matching layers with effective refractive indices gradually varying from 1 to 1.3. Materials with such unique refractive index characteristics are not readily available in nature. As a result, the solar cell with combined textures achieves over 90% external quantum efficiencies for a broad wavelength range of 460-980 nm, which is crucial to the development of advanced thin-substrate silicon solar cells.

Indium tin oxide nanorod electrodes for polymer photovoltaics

We have deposited indium tin oxide (ITO) nanorods on glass and glass/ITO substrates by DC sputtering and by e-beam deposition. The properties of the nanorods deposited by different methods and on different substrates have been investigated. The ITO nanorods were also used as an electrode in bulk heterojunction polymer solar cells. We found that the nanorod morphology and sheet resistance had a significant effect on the solar cell performance, with significant improvements in the efficiency compared to commercial ITO film substrates in all cases except for e-beam deposited nanorods on glass that had high sheet resistance. The best power conversion efficiency achieved was 3.2 % (for sputtered ITO nanorods on ITO), compared to 2.1 % for commercial ITO substrates.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands

InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices.