High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature

Gradual Carrier Filling Effect in "Green" InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption

Quantum dots (QDs) allow for a significant amount of strain relaxation, which is helpful in GaN systems where a large lattice mismatch needs to be accommodated. InGaN QDs with a large indium composition are intensively investigated for light emitters requiring longer wavelengths. These are especially important for developing high-efficiency white light sources. Understanding the carrier dynamics in this large lattice-mismatched system is essential to improving the radiative efficiency while circumventing high defect density. This work investigates femtosecond carrier and photon dynamics in self-organized In_0.27Ga_0.73N/GaN QDs grown by molecular beam epitaxy using transient differential absorption spectroscopy, which measures the differential absorption coefficient (Δα) with and without an optical pump. Due to 3D quantum confinement and the small effective mass of InGaN, the low density of states in the conduction band is easily filled with electrons. In contrast, the GaN barrier region is replete with a high density of electrons due to a large effective mass. This contrast in carrier density creates a unique phenomenon in the dynamics, showing a change in the differential absorption coefficient (Δα) sign from negative to positive with time. The ultrafast microscopic processes indicate that right after the optical pump and first photon absorption, the valence (conduction) band states are depleted (replete) of electrons. This ground-state bleaching process makes Δα negative, and the probe beam is not absorbed. The electrons are then gradually transferred from the GaN barrier into InGaN QDs, which absorb the second photon from the probe beam (excited-state absorption), making Δα positive. The presence of excited-state carriers with a long lifetime is indicative of the enhanced availability of carriers for radiative recombination. This effect also promotes stimulated emission and amplified spontaneous emission, which can be used to develop lasers and superluminescent LEDs, respectively. Measurements with multiple pump powers and temperatures further confirm that the efficacy of InGaN QDs is enhanced by this effective mass contrast and 3D reservoir of carriers from the GaN barrier. This effect can be used to improve the internal quantum efficiency of GaN-based light emitters.

Bilayer graphene/HgCdTe based very long infrared photodetector with superior external quantum efficiency, responsivity, and detectivity

We present a high-performance bilayer graphene (BLG) and mercury cadmium telluride (Hg_1−xCd_x=0.1867Te) heterojunction based very long wavelength infrared (VLWIR) conductive photodetector. The unique absorption properties of graphene enable a long carrier lifetime of charge carriers contributing to the carrier-multiplication due to impact ionization and, hence, large photocurrent and high quantum efficiency. The proposed p⁺-BLG/n-Hg_0.8133Cd_0.1867Te photodetector is characterized and analyzed in terms of different electrical and optical characteristic parameters using computer simulations. The obtained results are further validated by developing an analytical model based on drift-diffusion, tunneling and Chu's methods. The photodetector has demonstrated a superior performance including improved dark current density (∼1.75 × 10⁻¹⁴ µA cm⁻²), photocurrent density (∼8.33 µA cm⁻²), internal quantum efficiency (QE_int ∼ 99.49%), external quantum efficiency (QE_ext ∼ 89%), internal photocurrent responsivity (∼13.26 A W⁻¹), external photocurrent responsivity (∼9.1 A W⁻¹), noise equivalent power (∼8.3 × 10⁻¹⁸ W), total noise current (∼1.06 fA), signal to noise ratio (∼156.18 dB), 3 dB cut-off frequency (∼36.16 GHz), and response time of 9.4 ps at 77 K. Furthermore, the effects of different external biasing, light power intensity, and temperature are evaluated, suggesting a high QE_ext of 3337.70% with a bias of −0.5 V near room temperature.

We present a high-performance bilayer graphene (BLG) and mercury cadmium telluride (Hg_1−xCd_x=0.1867Te) heterojunction based very long wavelength infrared (VLWIR) conductive photodetector.

High performance mechanisms of near-infrared photodetectors with microcrystalline SiGe films deposited using laser-assisted plasma enhanced chemical vapor deposition system

The SiH(4) and GeH(4) reactant gases used for depositing microcrystalline SiGe films could be simultaneously decomposed when acted cooperatively on the plasma and the assistant CO(2) laser in the laser-assisted plasma enhanced chemical vapor deposition system. The carrier mobility of the 80 W laser-assisted SiGe films was significantly increased to 66.8 cm(2)/V-s compared with 2.22 cm(2)/V-s of the non-laser-assisted SiGe films. The performances of the resulting p-Si/i-SiGe/n-Si near-infrared photodetectors were improved due to the high quality and high carrier mobility of the laser-assisted SiGe films. The maximum photoresponsivity and the maximum quantum efficiency of the photodetectors with 80 W laser-assisted SiGe films were respectively improved to 0.47 A/W and 68.5% in comparison with 0.31 A/W and 46.5% of the photodetectors with non-laser-assisted SiGe films.