Second harmonic generation in AlGaAs photonic wires using low power continuous wave light

Second-harmonic generation in a high-index doped silica micro-ring resonator

We report the first, to the best of our knowledge, observation of second-harmonic generation (SHG) in a high-index doped silica micro-ring resonator, due to the symmetry-breaking-induced χ⁽²⁾ at the core and cladding interface of the waveguide. The generated SH power is shown to have quadratic dependence on the in-cavity power of the fundamental pump at around 1550 nm. The pumping wavelength sweep method is adopted to fulfill the phase-matching condition for maximum conversion efficiency of SHG. This work offers a new approach to generate a visible source for the visible-light integrated optical platform from infrared-visible light conversion.

AlGaAs Nonlinear Integrated Photonics

Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others. Numerous nonlinear waveguide platforms have been explored for these roles; the group of materials capable of combining both passive and active functionalities monolithically on the same chip is III–V semiconductors. AlGaAs is the most studied III–V nonlinear waveguide platform to date; it exhibits both second- and third-order optical nonlinearity and can be used for a wide range of integrated nonlinear photonic devices. In this review, we conduct an extensive overview of various AlGaAs nonlinear waveguide platforms and geometries, their nonlinear optical performances, as well as the measured values and wavelength dependencies of their effective nonlinear coefficients. Furthermore, we highlight the state-of-the-art achievements in the field, among which are efficient tunable wavelength converters, on-chip frequency-comb generation, and ultra-broadband on-chip supercontinuum generation. Moreover, we overview the applications in development where AlGaAs nonlinear functional devices aspire to be the game-changers. Among such applications, there is all-optical signal processing in optical communication networks and integrated quantum photonic circuits.

Efficient type II second harmonic generation in an indium gallium phosphide on insulator wire waveguide aligned with a crystallographic axis

We theoretically and experimentally investigate type II second harmonic generation in III-V-on-insulator wire waveguides. We show that the propagation direction plays a crucial role and that longitudinal field components can be leveraged for robust and efficient conversion. We predict that the maximum theoretical conversion is larger than that of type I second harmonic generation for similar waveguide dimensions and reach an experimental conversion efficiency of 12%/W, limited by the propagation loss.

Doubly-Resonant Photonic Crystal Cavities for Efficient Second-Harmonic Generation in III-V Semiconductors

Second-order nonlinear effects, such as second-harmonic generation, can be strongly enhanced in nanofabricated photonic materials when both fundamental and harmonic frequencies are spatially and temporally confined. Practically designing low-volume and doubly-resonant nanoresonators in conventional semiconductor compounds is challenging owing to their intrinsic refractive index dispersion. In this work we review a recently developed strategy to design doubly-resonant nanocavities with low mode volume and large quality factor via localized defects in a photonic crystal structure. We built on this approach by applying an evolutionary optimization algorithm in connection with Maxwell equations solvers; the proposed design recipe can be applied to any material platform. We explicitly calculated the second-harmonic generation efficiency for doubly-resonant photonic crystal cavity designs in typical III–V semiconductor materials, such as GaN and AlGaAs, while targeting a fundamental harmonic at telecom wavelengths and fully accounting for the tensor nature of the respective nonlinear susceptibilities. These results may stimulate the realization of small footprint photonic nanostructures in leading semiconductor material platforms to achieve unprecedented nonlinear efficiencies.

Influence of longitudinal mode components on second harmonic generation in III-V-on-insulator nanowires

The large index contrast and the subwalength tranverse dimensions of nanowires induce strong longitudinal electric field components. We show that these components play an important role for second harmonic generation in III-V wire waveguides. To illustrate this behavior, an efficiency map of nonlinear conversion is determined based on full-vectorial calculations. It reveals that many different waveguide dimensions and directions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a higher-order second harmonic mode.

Broadband 200-nm second-harmonic generation in silicon in the telecom band

Silicon is well known for its strong third-order optical nonlinearity, exhibiting efficient supercontinuum and four-wave mixing processes. A strong second-order effect that is naturally inhibited in silicon can also be observed, for example, by electrically breaking the inversion symmetry and quasi-phase matching the pump and the signal. To generate an efficient broadband second-harmonic signal, however, the most promising technique requires matching the group velocities of the pump and the signal. In this work, we utilize dispersion engineering of a silicon waveguide to achieve group velocity matching between the pump and the signal, along with an additional degree of freedom to broaden the second harmonic through the strong third-order nonlinearity. We demonstrate that the strong self-phase modulation and cross-phase modulation in silicon help broaden the second harmonic by 200 nm in the O-band. Furthermore, we show a waveguide design that can be used to generate a second-harmonic signal in the entire near-infrared region. Our work paves the way for various applications, such as efficient and broadband complementary-metal oxide semiconductor based on-chip frequency synthesizers, entangled photon pair generators, and optical parametric oscillators.

Second-harmonic generation in AlGaAs-on-insulator waveguides

Second-harmonic generation is demonstrated in AlGaAs-on-insulator waveguides at telecom wavelengths. Using this material platform, a maximum internal normalized efficiency of 1202±55%  W^-1 cm^-2 is achieved for a 100 fs pulsed excitation wavelength at 1560 nm. This finding is important towards enabling new chip-scale devices for sensing, metrology, and quantum optics.

Second harmonic generation in nano-structured thin-film lithium niobate waveguides

Integrated thin-film lithium niobate platform has recently emerged as a promising candidate for next-generation, high-efficiency wavelength conversion systems that allow dense packaging and mass-production. Here we demonstrate efficient, phase-matched second harmonic generation in lithographically-defined thin-film lithium niobate waveguides with sub-micron dimensions. Both modal phase matching in fixed-width waveguides and quasi-phase matching in periodically grooved waveguides are theoretically proposed and experimentally demonstrated. Our low-loss (~3.0 dB/cm) nanowaveguides possess normalized conversion efficiencies as high as 41% W^-1cm^-2.

Broadband second-harmonic phase-matching in dispersion engineered slot waveguides

Parametric optical nonlinearities are usually weak and require both high optical field intensity and phase-matching. Micro/nanophotonics, with strong confinement of light in waveguides of nanometer-scale cross-sections, can provide high field intensity, but is still in need of a solution for phase-matching across a broad bandwidth. In this article, we show that mode-coupling in slot waveguides can engineer the waveguide modal dispersion, and with proper choice of materials, can achieve on-chip broadband second-harmonic phase-matching. A phase-matching bandwidth in the range of 220 nm at mid-infrared can occur for a hetero-slot waveguide consisting of aluminum nitride (AlN) and silicon nitride (SiN). With a high-nonlinearity polymer as cladding material, about 1.76 W(-1)cm(-2) of normalized conversion efficiency in second-harmonic-generation (SHG) and about 23 dB signal gain in degenerate optical parametric amplification (DOPA) can be achieved over a broad bandwidth. An asymmetric-slot waveguide configuration and a thermal tuning scheme are proposed to reduce the fabrication difficulty. This concept of broadband second-harmonic phase-matching can be extended to other nonlinear optical frequency mixing processes, thus expanding the scope of on-chip nonlinear optical applications.

Tuneable four-wave mixing in AlGaAs nanowires

We have experimentally demonstrated broadband tuneable four-wave mixing in AlGaAs nanowires with the widths ranging between 400 and 650 nm and lengths from 0 to 2 mm. We performed a detailed experimental study of the parameters influencing the FWM performance in these devices (experimental conditions and nanowire dimensions). The maximum signal-to-idler conversion range was 100 nm, limited by the tuning range of the pump source. The maximum conversion efficiency, defined as the ratio of the output idler power to the output signal power, was -38 dB. In support of our explanation of the experimentally observed trends, we present modal analysis and group velocity dispersion numerical analysis. This study is what we believe to be a step forward towards realization of all-optical signal processing devices.

Fabrication of nanoscale lithium niobate waveguides for second-harmonic generation

Nanoscale waveguides are basic building blocks of integrated optical devices. Especially, waveguides made from nonlinear optical materials, such as lithium niobate, allow access to a broad range of applications using second-order nonlinear frequency conversion processes. Based on a lithium niobate on insulator substrate, millimeter-long nanoscale waveguides were fabricated with widths as small as 200 nm. The fabrication was done by means of potassium hydroxide-assisted ion-beam-enhanced etching. The waveguides were optically characterized in the near infrared wavelength range showing phase-matched second-harmonic generation.

Modal engineering of second-harmonic generation in single GaP nanopillars

We report on modal dispersion engineering for second-harmonic generation (SHG) from single vertical GaP nanopillars/nanowaveguides, fabricated by a top-down approach, using optical modal overlap between the pump (830 nm) and SHG (415 nm). We present a modal analysis for the SHG process in GaP nanopillars and demonstrate efficient utilization of the longitudinal component of the nonlinear polarization density. Our SHG measurements show quantitatively the presented model. We experimentally demonstrate that polarization beam shaping and field distribution modification of the radiated SHG light, at nanometer scale, can be achieved by tuning the pillar diameter and linear pump polarization. SHG from single pillars can be used as femtosecond nanoscopic light sources at visible wavelengths applicable for single cell/molecular imaging and interesting for future integrated nanophotonics components. While this work focuses on GaP nanopillars, the results are applicable to other semiconductor nanowire materials and synthesis methods.

Nanocavity-based self-frequency conversion laser

Self-frequency conversion (SFC), where both laser oscillation and nonlinear frequency conversion occurs in the same laser crystal, has been used to efficiently extend the operational wavelength of lasers. Downsizing of the cavity mode volume (V) and increasing the quality factor (Q) could lead to a more efficient conversion process, mediated by enhanced n-th order nonlinearities that generally scale as (Q/V)(n). Here, we demonstrate nanocavity-based SFC by utilizing photonic crystal nanocavity quantum dot lasers. The high Q and small V supported in semiconductor-based nanocavities facilitate efficient SFC to generate visible light, even with only a few photons present in the laser cavity. The combined broadband quantum dot gain and small device footprint enables the monolithic integration of 26 different-color nanolasers (spanning 493-627 nm) within a micro-scale region. These nanolasers provide a new platform for studying few-photon nonlinear optics, and for realizing full-color lasers on a single semiconductor chip.

Second harmonic generation by modal phase matching involving optical and plasmonic modes

The feasibility of a modal phase matching scheme between optical modes and surface plasmonic modes is demonstrated: in fact, the high effective index of a plasmonic mode allows us to obtain phase matching even in semiconductors showing a large dispersion between fundamental and second harmonic wavelengths. We design a realistic device to obtain Type-II second harmonic generation in AlGaAs-based waveguides; whereas one of the two pumps is carried by a plasmonic mode, the generated second harmonic signal is guided inside the AlGaAs multilayer, and hence it is not hampered by high propagation losses.