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Smart and Rapid Design of Nanophotonic Structures by an Adaptive and Regularized Deep Neural Network. NANOMATERIALS 2022; 12:nano12081372. [PMID: 35458079 PMCID: PMC9030763 DOI: 10.3390/nano12081372] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/08/2022] [Accepted: 04/14/2022] [Indexed: 02/04/2023]
Abstract
The design of nanophotonic structures based on deep learning is emerging rapidly in the research community. Design methods using Deep Neural Networks (DNN) are outperforming conventional physics-based simulations performed iteratively by human experts. Here, a self-adaptive and regularized DNN based on Convolutional Neural Networks (CNNs) for the smart and fast characterization of nanophotonic structures in high-dimensional design parameter space is presented. This proposed CNN model, named LRS-RCNN, utilizes dynamic learning rate scheduling and L2 regularization techniques to overcome overfitting and speed up training convergence and is shown to surpass the performance of all previous algorithms, with the exception of two metrics where it achieves a comparable level relative to prior works. We applied the model to two challenging types of photonic structures: 2D photonic crystals (e.g., L3 nanocavity) and 1D photonic crystals (e.g., nanobeam) and results show that LRS-RCNN achieves record-high prediction accuracies, strong generalizibility, and substantially faster convergence speed compared to prior works. Although still a proof-of-concept model, the proposed smart LRS-RCNN has been proven to greatly accelerate the design of photonic crystal structures as a state-of-the-art predictor for both Q-factor and V. It can also be modified and generalized to predict any type of optical properties for designing a wide range of different nanophotonic structures. The complete dataset and code will be released to aid the development of related research endeavors.
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Rutckaia V, Heyroth F, Schmidt G, Novikov A, Shaleev M, Savelev RS, Schilling J, Petrov M. Coupling of Germanium Quantum Dots with Collective Sub-radiant Modes of Silicon Nanopillar Arrays. ACS PHOTONICS 2021; 8:209-217. [PMID: 37362546 PMCID: PMC10286553 DOI: 10.1021/acsphotonics.0c01319] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/28/2023]
Abstract
In this paper, we demonstrate the infrared photoluminescence emission from Ge(Si) quantum dots coupled with collective Mie modes of silicon nanopillars. We show that the excitation of band edge dipolar modes of a linear nanopillar array results in strong reshaping of the photoluminescence spectra. Among other collective modes, the magnetic dipolar mode with the polarization along the array axis contributes the most to the emission spectrum, exhibiting an experimentally measured Q-factor of around 500 for an array of 11 pillars. The results belong to the first experimental evidence of light emission enhancement of quantum emitters applying collective Mie resonances in finite nanoresonators and therefore represent an important contribution to the new field of active all-dielectric meta-optics.
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Affiliation(s)
- Viktoriia Rutckaia
- Centre
for Innovation Competence SiLi-nano, Martin-Luther-University
Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Strasse 3, 06120 Halle (Saale), Germany
| | - Frank Heyroth
- Interdisciplinary
center of material science, Martin-Luther-University
Halle-Wittenberg, Heinrich-Damerow-Strasse 4, 06120 Halle (Saale), Germany
| | - Georg Schmidt
- Institute
of Physics, Martin-Luther-University Halle-Wittenberg, von-Danckelmann-Platz 3, 06120 Halle (Saale), Germany
| | - Alexey Novikov
- Institute
for Physics of Microstructures of the Russian Academy of Sciences, Academicheskaya Str. 7, Nizhny Novgorod 603950, Russia
- Lobachevsky
University, Gagarin av. 23, Nizhny Novgorod 603950, Russia
| | - Mikhail Shaleev
- Institute
for Physics of Microstructures of the Russian Academy of Sciences, Academicheskaya Str. 7, Nizhny Novgorod 603950, Russia
| | - Roman S. Savelev
- Department
of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| | - Joerg Schilling
- Centre
for Innovation Competence SiLi-nano, Martin-Luther-University
Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Strasse 3, 06120 Halle (Saale), Germany
| | - Mihail Petrov
- Department
of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
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Kim S, Toth M, Aharonovich I. Design of photonic microcavities in hexagonal boron nitride. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2018; 9:102-108. [PMID: 29441255 PMCID: PMC5789426 DOI: 10.3762/bjnano.9.12] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2017] [Accepted: 12/12/2017] [Indexed: 06/08/2023]
Abstract
We propose and design photonic crystal cavities (PCCs) in hexagonal boron nitride (hBN) for diverse photonic and quantum applications. Two dimensional (2D) hBN flakes contain quantum emitters which are ultra-bright and photostable at room temperature. To achieve optimal coupling of these emitters to optical resonators, fabrication of cavities from hBN is therefore required to maximize the overlap between cavity optical modes and the emitters. Here, we design 2D and 1D PCCs using anisotropic indices of hBN. The influence of underlying substrates and material absorption are investigated, and spontaneous emission rate enhancements are calculated. Our results are promising for future quantum photonic experiments with hBN.
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Affiliation(s)
- Sejeong Kim
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
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Pramudita P, Jang H, Karnadi I, Kim HM, Lee YH. Self-aligned nanoislands nanobeam bandedge lasers. OPTICS EXPRESS 2017; 25:6311-6319. [PMID: 28380984 DOI: 10.1364/oe.25.006311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We propose and demonstrate a novel one-dimensional nanobeam bandedge laser constituted by self-aligned nanoisland quantum-well (QW) structures. The formation of self-aligned InGaAsP nanoislands sandwiched between two InP claddings is the result of selective removal of QW through wet-etching processes. By controlling wet-etching time, we show a good spatial and spectral overlap between the dielectric mode and the self-aligned nanoisland structures leads to the realization of nanobeam bandedge lasers with low-threshold operations and high slope efficiencies. Optical characterization results indicate a strong correlation between the size of individual nanoisland and the threshold power of our nanobeam bandedge lasers. We obtain an approximately 81% reduction in the absorbed threshold power as we optimize the size of the nanoislands.
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Kim S, Ko H, Lee C, Kim M, Kim KS, Lee YH, Shin K, Cho YH. Semiconductor Photonic Nanocavity on a Paper Substrate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:9765-9769. [PMID: 27717077 DOI: 10.1002/adma.201603368] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2016] [Revised: 08/05/2016] [Indexed: 05/24/2023]
Abstract
Direct integration of semiconductor photonic nanocavities with paper substrates is demonstrated for the first time. 1D photonic crystal nanocavities successfully show lasing action on paper substrates. The device has great synergy as a sensor because paper has good wicking ability while a photonic crystal cavity has high figure of merit. The research provides a platform for eco-friendly and sustainable devices.
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Affiliation(s)
- Sejeong Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Hyojin Ko
- Department of Chemistry and Institute of Biological Interfaces, Sogang University, Seoul, 04107, South Korea
| | - Chulwon Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - MinKwan Kim
- Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Ki Soo Kim
- Convergence and Components & Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, South Korea
| | - Yong-Hee Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Kwanwoo Shin
- Department of Chemistry and Institute of Biological Interfaces, Sogang University, Seoul, 04107, South Korea
| | - Yong-Hoon Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
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Wood MG, Burr JR, Reano RM. 7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators. OPTICS EXPRESS 2016; 24:23481-23493. [PMID: 27828411 DOI: 10.1364/oe.24.023481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and N dopants. Measured devices yield a large DC tunability of 7.1 nm/V and a peak switching slope of 206 dB/V. Digital data transmission measurements at 100 Mb/s show 3 dB of switching with a swing voltage of 6.8 mV, 91.4 aJ/bit switching energy, and 1.08 pJ/bit holding energy.
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Burr JR, Reano RM. Zero-coupling-gap degenerate band edge resonators in silicon photonics. OPTICS EXPRESS 2015; 23:30933-30942. [PMID: 26698725 DOI: 10.1364/oe.23.030933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Resonances near regular photonic band edges are limited by quality factors that scale only to the third power of the number of periods. In contrast, resonances near degenerate photonic band edges can scale to the fifth power of the number periods, yielding a route to significant device miniaturization. For applications in silicon integrated photonics, we present the design and analysis of zero-coupling-gap degenerate band edge resonators. Complex band diagrams are computed for the unit cell with periodic boundary conditions that convey characteristics of propagating and evanescent modes. Dispersion features of the band diagram are used to describe changes in resonance scaling in finite length resonators. Resonators with non-zero and zero coupling gap are compared. Analysis of quality factor and resonance frequency indicates significant reduction in the number of periods required to observe fifth power scaling when degenerate band edge resonators are realized with zero-coupling-gap. High transmission is achieved by optimizing the waveguide feed to the resonator. Compact band edge cavities with large optical field distribution are envisioned for light emitters, switches, and sensors.
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Kim S, Kim HM, Lee YH. Single nanobeam optical sensor with a high Q-factor and high sensitivity. OPTICS LETTERS 2015; 40:5351-5354. [PMID: 26565872 DOI: 10.1364/ol.40.005351] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The miniaturization of optical sensors is essential for the realization of compact, portable, and cost-effective devices. Photonic crystal-based optical sensors, which have an ultra-small mode volume and footprint, have demonstrated remarkable recent progress in achieving a high figure-of-merit (FOM) in a sensor. Here, we report an optical sensor with a high Q-factor and high sensitivity based on a photonic crystal nanobeam using the second lowest air band-edge mode. We calculated that a nanobeam (n=3.4) in a water environment (n=1.33) has refractive-index sensitivity of ~631 nm/RIU, while the quality factor is greater than 23,300. Accordingly, a theoretical FOM of the sensor corresponds to >9500. To the best of our knowledge, experimental refractive-index sensitivity of 461 nm/RIU is the highest value among photonic crystal single nanobeam geometry. The simple geometry of uniform air hole sizes and lattice constants in the proposed nanobeam sensor allows easy fabrication and mechanical stability.
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Wood MG, Burr JR, Reano RM. Degenerate band edge resonances in periodic silicon ridge waveguides. OPTICS LETTERS 2015; 40:2493-2496. [PMID: 26030540 DOI: 10.1364/ol.40.002493] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We experimentally demonstrate degenerate band edge resonances in periodic Si ridge waveguides that are compatible with carrier injection modulation for active electro-optical devices. The resonant cavities are designed using a combination of the plane-wave expansion method and the finite difference time domain technique. Measured and simulated quality factors of the first band edge resonances scale to the fifth power of the number of periods. Quality factor scaling is determined to be limited by fabrication imperfections. Compared to resonators based on a regular transmission band edge, degenerate band edge devices can achieve significantly larger quality factors in the same number of periods. Applications include compact electro-optical switches, modulators, and sensors that benefit from high-quality factors and large distributed electric fields.
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Kim S, Kim HM, Son J, Kim YH, Ok JM, Kim KS, Jung HT, Min B, Lee YH. Low-voltage-tunable nanobeam lasers immersed in liquid crystals. OPTICS EXPRESS 2014; 22:30707-30712. [PMID: 25607018 DOI: 10.1364/oe.22.030707] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
A low-voltage-tunable one-dimensional nanobeam laser is realized by employing lithographically defined lateral electrodes. An InGaAsP nanobeam with a sub-micrometer width is transfer-printed in the middle of two electrodes using a polydimethylsiloxane stamp. Spectral tuning is achieved by controlling the molecular alignment of the surrounding liquid crystals (LCs). From μm-scale-gap structures, a total wavelength shift that exceed 6 nm is observed at a low voltage of less than 10 V. A measured spectral tuning rate of 0.87 nm/V, which is the largest value ever reported to our knowledge among LC-tuned photonic crystal lasers, was also noted.
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Wu TT, Chen HW, Lan YP, Lu TC, Wang SC. Suspended GaN-based band-edge type photonic crystal nanobeam cavities. OPTICS EXPRESS 2014; 22:2317-2323. [PMID: 24663524 DOI: 10.1364/oe.22.002317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We demonstrated GaN-based photonic crystal (PC) nanobeam cavities by using the e-beam lithography and the suspended nanobeams were realized by focused-ion beam (FIB) milling. One resonant mode was clearly observed at 411.7 nm at 77K by optical pumping. The quality factor was measured to be to 7.4 × 10(2). Moreover, the degree of polarization value was measured to be 40%. The temperature-dependent characteristics were measured and discussed, which unambiguously demonstrated that the observed resonant peak originated from the band-edge mode of the one-dimensional PC nanobeam.
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Burr JR, Gutman N, de Sterke CM, Vitebskiy I, Reano RM. Degenerate band edge resonances in coupled periodic silicon optical waveguides. OPTICS EXPRESS 2013; 21:8736-8745. [PMID: 23571962 DOI: 10.1364/oe.21.008736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Using full three-dimensional analysis we show that coupled periodic optical waveguides can exhibit a giant slow light resonance associated with a degenerate photonic band edge. We consider the silicon-on-insulator material system for implementation in silicon photonics at optical telecommunications wavelengths. The coupling of the resonance mode with the input light can be controlled continuously by varying the input power ratio and the phase difference between the two input arms. Near unity transmission efficiency through the degenerate band edge structure can be achieved, enabling exploitation of the advantages of the giant slow wave resonance.
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Affiliation(s)
- Justin R Burr
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43212, USA
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Lim HJ, Lee CM, Ahn BH, Lee YH. Dual-rail nanobeam microfiber-coupled resonator. OPTICS EXPRESS 2013; 21:6724-6732. [PMID: 23546054 DOI: 10.1364/oe.21.006724] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
A microfiber-coupled dual-rail nanobeam resonator is proposed and demonstrated. The dual-rail scheme is employed to encourage the overlap between the light emitter and the air mode. The one-dimensional resonant cavity is formed by contacting a curved microfiber with the dual-rail nanobeam. The finite width of the dual-rail nanobeam turns out to be advantageous for both out-coupling with the microfiber and broader tuning of resonant wavelength. By employing InGaAsP quantum well gain medium, a simple and robust reconfigurable laser is created. Experimentally we measure a quality factor of 11,000 and out-coupling efficiency of 30%. The spontaneous emission factor (β) of the nanobeam laser is measured to be 0.16. Computationally we identified a resonant cavity with a quality factor over 6 × 10(5) and out-coupling efficiency over 90%.
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Affiliation(s)
- Hee-Jin Lim
- Department of Physics, KAIST, Daejeon 305-701, South Korea
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